Denso Corporation

Masato Noborio

Jun Saito

Yukihiko Watanabe

Yusuke Yamashita

Takehiro Kato

Masayasu Ishiko

In a semiconductor device, a source region is made of an epitaxial layer so as to reduce variation in thickness of a base region and variation in a threshold value. Outside of a cell part, a side surface of a gate trench is inclined relative to a normal direction to a main surface of a substrate, as compared with a side surface of a gate trench in the cell part that is provided by the epitaxial layer of the source region being in contact with the base region.

Silicon carbide semiconductor device and method for manufacturing the same

A semiconductor device includes an inversion type semiconductor element including: a semiconductor substrate; a first conductive type layer formed on the semiconductor substrate; an electric field blocking layer formed on the first conductive type layer and including a linear shaped portion; a JFET portion formed on the first conductive type layer and having a linear shaped portion; a current dispersion layer formed on the electric field blocking layer and the JFET portion; a deep layer formed on the electric field blocking layer and the JFET portion; a base region formed on the current dispersion layer and the deep layer; a source region formed on the base region; trench gate structures including a gate trench, a gate insulation film, and a gate electrode, and arranged in a stripe shape; an interlayer insulation; a source electrode; and a drain electrode formed on a back surface side of the semiconductor substrate.

Semiconductor device

A semiconductor device comprises: a cell region that includes a semiconductor element; an outer peripheral region that surrounds an outer periphery of the cell region; a substrate that has a front surface and a back surface, and is made of a semiconductor of a first or second conductivity type; a first conductivity layer that is formed on the front surface of the substrate and made of the semiconductor of the first conductivity type having a lower impurity concentration than impurity concentration of the substrate; a first electrode that is provided on an opposite side of the substrate across the first conductivity layer, the first electrode being provided in the semiconductor element; and a second electrode that is placed toward the back surface of the substrate, the second electrode being provided in the semiconductor element.

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Kariya, Japan

Masato Noborio