Nagase Co., Ltd.

Masato Nishizawa

Yoichi Sato

Toshiyuki Kouchi

Kanji Otsuka

Kaoru Kobayashi

Minoru Uwai

A semiconductor device that writes, into respective memory spaces of a plurality of separate memories constituting a search memory mat, an entry address corresponding to key data to be written. In this semiconductor device, pieces of divided data are assigned respectively to the separate memories, and, by employing each divided data as an address, entry addresses corresponding to the divided data are written sequentially into memory spaces specified by memory addresses of the separate memories (first writing process). In this first writing process, if another entry address is already written in an accessed memory space, no entry address is written into that memory space. If an entry address corresponding to a single one of the plurality of pieces of divided data is successfully written into a memory space, the first writing process is ended. Second write processing to a verification memory may also be performed. Key data may be written to a backup memory when a whole collision occurs. The semiconductor device may also include multiple encoding circuits using different algorithms, and a narrowing unit to narrow down entry address candidates.

Writing method and semiconductor device including a search memory mat with write processing terminated when one piece of divided key data is successfully written

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Tokyo, Japan

Masato Nishizawa