Hitachi, Ltd.

Other

Hitachi Automotive Systems, Ltd.

Masato Nakamura

Masahide Okamoto

Osamu Ikeda

Koji Sasaki

Tetsuya Nakatsuka

Shinji Hiramitsu

Satoshi Matsuyoshi

Masanori Sakai

Tasao Soga

Fumiyuki Kobayashi

Tsuyoshi Fujita

Hanae Shimokawa

Yuji Fujita

Yamato Asakura

Hirayoshi Tanei

Yoshiyuki Takamori

Toshiharu Ishida

Shoichi Iwanaga

Koji Serizawa

Shousaku Ishihara

Norio Sengoku

Kousaku Morita

Hideki Mukuno

Fumikazu Tagami

Toshihiro Hachiya

Hiroyuki Ohta

Shiro Yamashita

Katsumi Ohsumi

Hideyuki Hosokawa

Yoichi Wada

Mitsuhiro Oshiki

Takashi Kuroki

Mikio Izumi

Shosaku Ishihara

Kouji Hayashi

Kazuhiko Akamine

Nagao Suzuki

Takaya Osawa

Shuzou Sano

In ultrasonic bonding of a metal terminal to a substrate pad, a thin buffer metal layer which is formed of a soft metal or a highly slidable metal is interposed between a terminal edge and a pad so as to prevent direct contact between an end of the terminal and the pad upon bonding. This makes it possible to prevent abrasion and a crack in the pad at the end of the terminal caused by pressure and an ultrasonic wave upon the ultrasonic bonding. This makes it possible to realize a compact bonded structure with high reliability.

Connection structure, power module and method of manufacturing the same

A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a CuSncontent greater than a eutectic content.

Semiconductor device and automotive ac generator

A semiconductor device which includes a semiconductor chip; an electrically conductive base electrode bonded to the lower surface of the chip by a first bonding member; an electrically conductive lead electrode bonded to the upper surface of the chip by a second bonding member; and a first stress relief member for reducing stress developed in the first bonding member due to the difference in thermal expansion between the chip and the base electrode. Both the base electrode and the first stress relief member are in direct contact with the lower surface of the first bonding member. A protrusion is formed upstanding from the base electrode in direct contact with the first bonding member, and the first stress relief member surrounds a circumferential portion of the protrusion.

Semiconductor device

Along with miniaturization of a solder connection portion in a bump repair or a local reflow, a void generated at the time of soldering remains in a solder to remarkably reduce connection strength, and there occurs a non-connection phenomenon in which the solder connection portion and a solder paste are melted, but are not fused with each other. During melting of a solder, a target component is clamped, ultrasonic oscillation is directly applied only to the target component. Further, start of solidification of the solder connection portion is detected by change of an electric impedance of a transducer while applying the ultrasonic oscillation, and the clamp is released before a substrate is warped.

Soldering method and soldering apparatus

Semiconductor device and automotive AC generator

In order to provide a two-dimensionally arrayed probe (element packaging structure) in which a multilayer element can be used as a piezoelectric ceramic transducer element, each defective element can be replaced and the ill connection of each element can be repaired, and in order to provide a multilayer electric part suitable for realizing such an element packaging structure, the multilayer electronic part is configured with a multilayer chip-like element having a surface electrode, an internal electrode and a back electrode on the one hand and a flexible board attached to one side surface of the chip-like element on the other hand, alternate ones of the electrodes along the multilayer of the chip-like element are connected electrically to each other by the electrode pattern of the flexible board thereby to form two electrode groups, and the end portions of the electrode pattern of the flexible board are used as the two electrode portions for external connection which are electrically connected to the two electrode groups.

Multilayer electronic part, its manufacturing method, two-dimensionally arrayed element packaging structure, and its manufacturing method

An electronic equipment is capable of improving falling down shock resistance or impact resistance in an electronic equipment and of improving reliability of a solder joint in a semiconductor device die-bonded Si chip or the like to which thermal shock causing large deformation may act, bump mounting of BGA, CSP, WPP, flip-chip and so forth, a power module acting large stress and so forth. The electronic equipment has a circuit board and an electronic parts to be electrically connected to an electrode of the circuit board. The electrode of the circuit board and an electrode of the electronic part are connected by soldering using a lead free solder consisted of Cu: 0-2.0 mass %, In: 0.1-10 mass %, and Sn: remaining amount.

Electronic device

In a nuclear power plant, by injecting an amount of hydrogen small enough not to increase a radiation dose rate of the main steam system, ECP of metallic component materials composing a nuclear reactor can be decreased to suppress the potential of occurrence of IGSCC, and the control can be easily performed, and the operating cost can be suppressed to increase. Occurrence of intergranular stress corrosion cracking in metallic component materials in contact with reactor cooling water is suppressed by injecting zirconium hydroxide and hydrogen into the reactor cooling water to decrease the electrochemical corrosion potential of the metallic component materials.

Method of operating nuclear power plant, nuclear power plant, and method of controlling water chemistry of nuclear power plant

An electronic equipment is capable of improving falling down shock resistance or impact resistance in an electronic equipment and of improving reliability of a solder joint in a semiconductor device die-bonded Si chip or the like to which thermal shock causing large deformation may act, bump mounting of BGA, CSP, WPP, flip-chip and so forth, a power module acting large stress and so forth. The electronic equipment has a circuit board and an electronic parts to be electrically connected to an electrode of the circuit board. The electrode of the circuit board and an electrode of the electronic part are connected by soldering using a lead free solder consisted of Cu: 0&tilde;2.0 mass %, In: 0.1&tilde;10 mass %, and Sn: remaining amount.

Electron device and semiconductor device

Surfaces of the structural components of a nuclear power plant exposed to reactor water are wetted with an electroless plating solution containing an electrical insulating substance. The electrical insulating substance has a high resistivity about 10 (100000) times those of the structural components of the nuclear power plant or above. A metal film containing the electrical insulating substance is formed on the surfaces of the structural components exposed to the reactor water by wetting the surfaces of the structural components with the electroless plating solution. Thus, the electrochemical corrosion potential of the structural components is reduced regardless of whether hydrogen is injected into the reactor water.

Treatment method of nuclear reactor internal component

Ceramic circuit substrate which is sintered at 900 to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850 to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.

Circuit substrate and manufacture thereof, ceramic composition for

Ceramic circuit substrate which is sintered at 900.degree. to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850.degree. to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.

Circuit substrate and electronics computer, using sintered glass ceramics

Growing community of inventors

Fujisawa, Japan

Masato Nakamura