Tokyo Electron Limited

Masato Morishima

Kenji Ouchi

Takashi Fuse

Daisuke Nishide

Katsuhiko Iwabuchi

Takayuki Kamaishi

Kazuki Yamada

Taiki Katou

Madoka Fujimoto

Akinori Shimamura

In one embodiment in which a technology which is capable of reducing voids that can occur when burying an insulating film into a trench while suppressing process complication, a method MT for processing a wafer W is provided. The wafer W has a grooveformed on the main surfaceof the wafer W. The method MT includes: step Sof accommodating the wafer W in a processing chamberof a plasma processing apparatus; step Sof starting supplying a first gas into the processing chamber; step Sof starting supplying plasma generation high-frequency power into the processing chamber; and step Sof starting intermittent supplying a second gas into the processing chamberand starting supplying a third gas into the processing chambertogether, the first gas is a nitrogen-containing gas, the second gas is a gas that does not contain halogen, and the third gas is a gas that contains halogen.

Method for processing workpiece

A plasma electrode is provided with an electrode plate, a ground plate, and an insulating plate arranged between the electrode plate and the ground plate. Protrusions of the electrode plate are arranged inside through holes of the ground plate and inside through holes of the insulating plate. One of the through hole provided on the center axes of the protrusions and the through hole provided around the through hole discharges a first processing gas to below the ground plate. The other of the through holes exhausts a gas existing below the ground plate. A second flow path around the protrusions supplies a second processing gas supplied via a first flow path to a gap between outer walls of the protrusions and inner walls of the through holes. The second processing gas supplied to the gap is converted into plasma by high frequency power applied to the electrode plate.

Plasma electrode and plasma processing device

There is provided a method of forming a sealing film to seal a device formed on a substrate, including: supplying a mixture gas including a silicon-containing gas and a halogen element-containing gas or a mixture gas including a silicon-containing gas and a gas containing a functional group having an electronegative property stronger than that of nitrogen, as a first mixture gas, into a processing container; generating plasma of the first mixture gas within the processing container; and forming a first sealing film to cover the device using the first mixture gas activated by the plasma.

Film forming method and film forming apparatus

A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.

Growing community of inventors

Tokyo, Japan

Masato Morishima