Sharp Kabushiki Kaisha Corporation

Masato Miyauchi

Hiroya Sato

Takatsugu Obata

Ichiro Fujii

Akihiro Kondo

Takahiro Teramoto

Tomomi Nakamura

Kaori Dakeshita

Yuko Takeda

Kaori Fujii

Kumiko Morita

An electrophotographic photoreceptor highly sensitive to laser light, which is capable of forming an image without forming an interference fringe and a coating liquid for a charge generating layer for forming the same are provided, and the photoreceptor is produced with excellent coating properties and high electric characteristics at a low cost. The electrophotographic photoreceptor comprises an electroconductive support and a photosensitive layer thereon having a charge generating layer containing TiOPc as a charge generating material and having a Y value by a color measuring apparatus of 37 or less, and particularly 35 or less, and a charge transporting layer, accumulated thereon, containing a charge transporting material. In an X-ray diffraction spectrum, the TiOPc has major diffraction peaks at Bragg angles (2&thgr;&plusmn;0.2&deg;) of 7.3&deg;, 9.4&deg;, 9.6&deg;, 11.6&deg;, 13.3&deg;, 17.9&deg;, 24.1&deg; and 27.2&deg;, and in particular, the diffraction peaks at the Bragg angles (2&thgr;&plusmn;0.2&deg;) of 9.4&deg; and 9.6&deg; overlap each other and form a bundle of peaks, which is a maximum intensity of diffraction, and the peak at the Bragg angle (2&thgr;&plusmn;0.2&deg;of 27.2&deg; is a second maximum intensity of diffraction. The charge generating layer is produced by using a coating liquid containing TiOPc and having a turbidity of 180 or more, particularly 200 to 350.

Electrophotographic photoreceptor containing TiOPc, method for manufacturing the same, and coating liquid for charge generating layer

An object of the invention is to improve the photosensitivity characteristics, characteristics on repeated use and stability of a photoreceptor. A photosensitive layer formed on a conductive support of a photoreceptor contains crystalline oxotitanylphthalocyanine having major peaks in an X-ray diffraction spectrum at Bragg angles (2&thgr;&plusmn;0.2&deg;) of 7.3&deg;, 9.4&deg;, 9.6&deg;, 11.6&deg;, 13.3&deg;, 17,9&deg;, 24.1&deg; and 27.2&deg;, wherein a peak bundle formed by overlapping the peaks at 9.4&deg; and 9.6&deg; is the largest peak, and the peak at 27.2&deg; is the secondary largest peak as a charge generating substance. Furthermore, it contains a bisamine compound, an N,N&prime;-bisenamine compound, a styryl compound, an amine-hydrazone compound, a benzofuran-bishydrazone compound, a bisenamine compound, a benzofuran-bishydrazone compound or a benzofuran-bis-cyclic hydrazone compound represented by the particular structural formulae as a charge transporting substance.

Crystalline oxotitanylphthalocyanine and electrophotographic photoreceptor using the same

A crystalline titanyl phthalocyanine having diffraction peaks at least at 7.4.degree., 9.4.degree., 9.7.degree. and 27.3.degree. of Bragg angle (20.+-.0.2.degree.) in X-ray diffraction pattern with a doublet peak at 9.4.degree. or 9.7.degree., one of the diffraction peaks at 9.4.degree. and 9.7.degree. being the maximum.

Crystalline titanyl phthalocyanines and use thereof

The present invention provides an electrophotographic photoreceptor having a uniform film, in which the electrical characteristics are not deteriorated over an extended period of time without causing abrasion, scratches and film defects on the surface of the photoreceptor by the contact with toner, a developer, paper and a cleaning blade and which can repeatedly be used. The electrophotographic photoreceptor has a conductive support and a photoconductive layer provided on the above conductive support, and the photoconductive layer contains a charge-generating material, a charge-transporting material and a binder resin having no or one glass transition point.

Electrophotographic photoreceptor and production process for same

A semiconductor apparatus is provided which includes a semiconductor chip on its one plane with a plurality of terminal electrodes, which are divided into a plurality of bundles, a bump provided on one of the bundles of terminal electrodes, a connect member of heat conductivity having a plane connected with the plane of the bump, and other connect members for connecting the other bundles of terminal electrodes regardless of the connect member. As a result, the terminal resistance of the semiconductor apparatus is considerably reduced.

Semiconductor apparatus with heat sink

A semiconductor device is disclosed. The semiconductor device include: a semiconductor substrate; a plurality of vertical type construction transistors, each of the transistors including; a semiconductor multilayer formed on the semiconductor substrate, the semiconductor multilayer including at least an emitter layer, a collector layer, and a base layer; first, second, and third electrodes, the first electrode being electrically connected to the base layer, the second electrode being electrically connected to one of the emitter layer and the collector layer, the third electrode being formed on the semiconductor multilayer, and being electrically connected to the other of the emitter layer and the collector layer; a first interconnection, formed on the semiconductor substrate, for electrically connecting a plurality of the first electrodes to each other; a second interconnection, formed on the semiconductor substrate in a non-intersecting relationship with the first interconnection, for electrically connecting a plurality of the second electrodes to each other; and a plurality of bump electrodes configured to receive a third interconnection for electrically connecting the plurality of bump electrodes to each other, each of the plurality of bump electrodes being formed on a respective one of the third electrodes.

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Kyoto, Japan

Masato Miyauchi