Applied Materials, Inc.

Orbotech Lt Solar, Llc.

Gamma Precision Technology, Inc.

Other

Novellus Systems Incorporated

Applied Komatsu Technology, Inc.

Betek Manufacturing, Inc.

Mtm Engineering, Inc.

Masato M Toshima

Tetsuya Ishikawa

David Walter Groechel

Jerry Yuen Wong

Kenneth S Collins

Jeffrey S Marks

Jay D Pinson, Ii

David K Cheng

Craig A Roderick

Chan-Lon Yang

John R Trow

Peter R Keswick

Cheng C Wang

Phil M Salzman

Steven C Murdoch

Kam S Law

Mark A Stenholm

Leonard Hall

James Howard

Dan Maydan

Wendell T Blonigan

Craig Lyle Stevens

Jerry Yuen-Kui Wong

Lawrence Chang-Lai Lei

Sasson Roger Somekh

Gerald Z Yin

David N Wang

David Eric Berkstresser

Steve Kleinke

Isaac Harari

Peter D Hoppe

Linh Can

Hiroji Hanawa

Lawrence C Lei

Koichi Ito

Shingo Kadomura

Norman L Turner

Gerald Zheyao Yin

Robert J Steger

Robin K F Law

Binh Nguyen

Trung Nguyen

Jay C Cho

Regga Tekeste

Tetsuhiko Sambei

Wendell Thomas Blonigan

Robin KF Law

A substrate includes a plurality of OLED, each having a conductor layer. A coating is formed over the OLEDs, the coating comprises a first inorganic layer formed over the OLED structures and at least partially over each of the contact layers, a buffer layer over the first inorganic layer, a second inorganic layer over the buffer layer, wherein the buffer layer comprises a first inorganic interface layer in contact with the first inorganic layer, a second inorganic interface layer in contact with the second inorganic layer, and an organic layer sandwiched between the first and second inorganic interface layers.

Method and apparatus for encapsulation of an organic light emitting diode

A method for auto-sequencing of plasma processing system for concurrent processing of several substrates. The method autonomously sequence processing and move substrates in different directions as necessary. The method moves two substrate trays together into the processing chamber for substrate exchange, and remove the trays from the chamber one at a time. When needed, the method moves one tray into the processing chamber for removal of the susceptor without exposing the chamber to atmospheric environment.

Auto-sequencing multi-directional inline processing method

To provide a processor and a processing method to make the operation to load and unload workpieces to and from a processing chamber more efficient, and improve workpiece processing efficiency. A processor equipped with a processing chamberwherein a first supply/discharge port and a second supply/discharge port have been provided, characterized by being equipped with a first transport mechanism to perform an operation to supply and discharge workpiecesvia the aforementioned first supply/discharge port, a second transport mechanism to perform an operation to supply and discharge workpiecesvia the aforementioned second supply/discharge port, an exchange means to deliver workpiecesthat have been loaded for processing by the aforementioned first transport mechanism to the aforementioned second transport mechanism, and deliver workpiecesthat have been loaded for processing by the aforementioned second transport mechanism to the first transport mechanism, and a control unitto drive the aforementioned first transport mechanism and second transport mechanism, and alternately supply unprocessed workpieces from the aforementioned first supply/discharge port and the aforementioned second supply/discharge port to the aforementioned processing chamber for processing.

Processing apparatus and processing method

An apparatus and method for concurrent processing of several substrates. The system employs a novel architecture which, while being linear, may autonomously sequence processing and move substrates in different directions as necessary. The system moves several substrates concurrently; however, unlike the prior art it does not utilize trays.

Auto-sequencing inline processing apparatus

A showerhead for a plasma process apparatus for processing substrates, comprising a showerhead body comprising a top plate and a bottom plate defining a cavity in between; a gas inlet formed in the top plate; a perforated plate positioned between the top plate and the bottom plate and dissecting the cavity into an upper gas compartment and a lower gas compartment; and, wherein the bottom plate comprises a plurality of elongated diffusion slots on its lower surface and a plurality of diffusion holes on its upper surface, each of the diffusion holes making fluid connection from the lower gas compartment to more than one of the diffusion slots.

Showerhead assembly for plasma processing chamber

Auto-sequencing multi-directional inline processing apparatus

The substrate processing apparatus is capable of highly efficiently feeding and carrying out work and improving production efficiency. The substrate processing apparatus comprises: a processing chamber including a processing stage; a first load lock chamber for feeding the work, the first load lock chamber being communicated to the processing chamber; a second load lock chamber for carrying out the work, the second load lock chamber being communicated to the processing chamber; a first buffer storage being located between the processing chamber and the first load lock chamber, the first buffer storage storing the work to be transferred therebetween; and a second buffer storage being located between the processing chamber and the second load lock chamber, the second buffer storage storing the work to be transferred therebetween.

Substrate processing apparatus

In one embodiment, a lifting apparatus in an integrated circuit fabrication system includes a sliding mechanism supporting a rotatable assembly and an actuator configured to vertically move the sliding mechanism. Among other advantages, the apparatus allows the rotatable assembly to be lifted and then rotated to allow access to interior components, for example. In one embodiment, the rotatable assembly comprises a lid of a process chamber.

Lifting mechanism for integrated circuit fabrication systems

A workpiece loading interface is included within a workpiece processing system which processes workpieces, typically wafers, in a vacuum. The workpiece loading interface includes two separate chambers. Each chamber may be separately pumped down. Thus, while a first cassette of wafers, from a first chamber is being accessed, a second cassette of wafers may be loaded in the second chamber and the second chamber pumped down. Each chamber is designed to minimize intrusion to a clean room. Thus a door to each chamber has a mechanism which, when opening the door, first moves the door slightly away from an opening in the chamber and then the door is moved down parallel to the chamber. After the door is opened, a cassette of wafers is lowered through the opening in a motion much like a drawbridge. The cassette may be pivoted within the chamber when the position from which wafers are accessed from the cassette differs from the position from which the cassette is lowered out of the chamber.

Dual cassette load lock

A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Plasma reactor using inductive RF coupling, and processes

A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure. The invention is also embodied in an RF plasma reactor for processing a semiconductor workpiece, including one or more wall structures for containing a plasma therein, a workpiece support, the workpiece support comprising a lower electrode, an upper electrode facing the lower electrode and spaced across a plasma generation region of said chamber from said lower electrode, and first and second magnet structures adjacent the wall structure and in spaced relationship with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.

Magnetic confinement in a plasma reactor having an RF bias electrode

There is provided a method used for processing an organic low dielectric constant insulating film to a desired shape for enabling facilitated stripping of an organic film formed on top of the organic low dielectric constant insulating film. Specifically, there is provided a method for stripping an organic film formed on a layered unit having at least an organic low dielectric constant insulating film. This method includes generating radicals in a gas mainly composed of fluorine-based gas, and stripping the organic film by the generated radicals.

Method for stripping organic based film

Growing community of inventors

Sunnyvale, CA, United States of America

Masato M Toshima