Toppan Printing Co., Ltd.

Masato Kon

Mamoru Ishizaki

Manabu Ito

Ryohei Matsubara

Osamu Kina

Jin Sato

Mitsuru Kano

Toshiaki Yoshihara

Norimasa Sekine

Yo Sakata

Yutaka Kodera

A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

Film forming apparatus

A film formation apparatus and a film formation method that can homogenize the distribution of gas in each zone in a chamber and improve film formation precision are provided. A film formation apparatus according to one embodiment includes: a chamber which includes a plurality of zones into which gas is introduced, and a plurality of discharge ports that discharge the gas located in at least any of the zones and that can individually adjust an opening state; and a transportation unit that transports a substrate so as to pass through the plurality of the zones in the chamber.

Film formation apparatus and film formation method

A laminate body includes a base material, a film-like or a membrane-like undercoat layer that is formed in at least a portion of the outer surface of the base material, and an atomic layer deposition film that is formed on a surface opposite to a surface coming into contact with the base material among both surfaces of the undercoat layer in the thickness direction thereof. At least a portion of precursors of the atomic layer deposition film bind to the undercoat layer, and the atomic layer deposition film is formed into a membrane shape covering the undercoat layer.

Laminate body, gas barrier film, and method of manufacturing the same

A reflective exposure mask blank and a reflective exposure mask are provided, and the mask enables accurate exposure and transcription without having light being reflected from areas other than a circuit pattern area. The reflective mask blank has, on a substrate (), a multilayer reflective film (), a protective film (), an absorption film (), and a reverse-surface conductive film (). A reverse-surface conductive film is formed from indium tin oxide. The substrate contains SiO, TiO, and at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur (S), selenium (Se), gold (Au), and neodymium (Nd). The reflective mask is manufactured by forming a circuit pattern by selectively stripping the absorption film on the reflective mask blank, and forming a light-shielding frame by stripping the multilayer reflective film, the protective film, and the absorption film around the circuit pattern.

Mask blank for reflection-type exposure, and mask for reflection-type exposure

One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode. Wherein the gate wire, the capacitor electrode and the capacitor wire are in the same layer as the gate electrode, and wherein the sealing layer does not cover a connection part of the source electrode and a connection part of the drain electrode and wherein the drain electrode and the source electrode are connected to the oxide semiconductor pattern via the connection part of the drain electrode and the connection part of the source electrode.

Thin film transistor, method for manufacturing the same and display using the same

A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In&#x2014;Ga&#x2014;Zn&#x2014;O. A display, such as a liquid crystal display, can have such a structure.

Structure with transistor

One embodiment of the present invention is a thin film transistor including a gate electrode formed on an insulating substrate, a gate insulator formed on the gate electrode, a drain electrode and a source electrode formed on the gate insulator, an oxide semiconductor pattern formed between the drain electrode and the source electrode, and a sealing layer formed on the oxide semiconductor pattern.

Growing community of inventors

Tokyo, Japan

Masato Kon