Mitsubishi Heavy Industries Limited

Mitsubishi Heavy Industries Machine Tool Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Masato Kinouchi

Takayuki Goto

Kensuke Ide

Takenori Suzuki

Takeshi Tsuno

Jun Utsumi

Satoshi Tawara

Saneyuki Goya

Toshiya Watanabe

Minoru Danno

Takashi Ishide

Yoichiro Tsumura

Hideki Takagi

Yoshihito Fujita

Makoto Yamasaki

Tsugumaru Yamashita

Yuuichi Kurashima

Atsushi Takita

Ryu Suzuki

Kohei Kanaoka

Keiichiro Tsutsumi

Provided are a machining device (), a machining unit, and a machining method that irradiate a workpiece () with a laser beam to perform cutting or boring machining of the workpiece (). The invention has a laser output device (), a guiding optical system () that guides a laser beam, and an irradiating head () that guides a laser beam and irradiates the workpiece () with the laser beam. The irradiating head () integrally rotates a first prism () and a second prism () with a rotation mechanism, thereby rotating a light path of the laser beam around a rotational axis of the rotation mechanism and irradiating the workpiece () while rotating the position of irradiation to the workpiece. A control device () calculates an allowable rotational frequency range of the laser beam on the basis of the relationship between an allowable thickness of a remelted layer of the workpiece () and a rotational frequency, or the relationship between an allowable thickness of an oxidization layer of the workpiece and the rotational frequency, determines a rotational frequency included in the allowable rotational frequency range as the rotational frequency of the rotation mechanism, and rotates the rotation mechanism at the determined rotational frequency, thereby enabling high-precision machining to be performed with a simple configuration.

Machining device, machining unit, and machining method

Provided is a laser processing method in which a laser processing head for irradiating, with at least a short-pulse laser, a processed article having a protection layer laminated to a metal layer is used to process the processed article, whereby high-quality, highly accurate processing is possible by means of a short-pulse laser processing step for irradiating the protection layer with the short-pulse laser and ablating the protection layer, and a metal layer processing step for ablating the metal layer in the area that was ablated during the short-pulse laser processing step.

Laser processing method and laser processing apparatus

A processing apparatus and a processing method which perform processing more accurately with a simple structure are provided. The processing apparatus includes an irradiation headand a control device. The irradiation headincludes a laser turning unitand a condensing optical system. The laser turning unitincludes a first prism, a second prism, a first rotating mechanism, and a second rotating mechanism. The control device adjusts the differences between rotation speeds and phase angles of the first prismand the second prismbased on a relation between at least a heat affected layer of a workpiece and a turning speed of laser.

Processing apparatus and processing method

A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.

Room temperature bonding apparatus and room temperature bonding method

A room-temperature bonding apparatus of the present invention includes: a plurality of first beam sources configured to emit a plurality of first activation beams which are irradiated to a first activation surface of a first substrate; a plurality of second beam sources configured to emit a plurality of second activation beams which are irradiated to a second activation surface of a second substrate; and a pressure welding mechanism configured to bond the first substrate and the second substrate by bring the first activation surface and the second activation surface contact, after the first activation surface and the second activation surface are irradiated. The room-temperature bonding apparatus can more uniformly irradiate to the first activation surface and the second activation surface, so that the first substrate and the second substrate can be more appropriately bonded with each other, compared with another room-temperature bonding apparatus which irradiates the first activation surface and the second activation surface by using one beam source.

Room-temperature bonding apparatus

A wafer bonding method includes: holding a first substrate with an upper holding mechanismby applying a voltage to the upper holding mechanism; generating a bonded substrate by bonding the first substrate and a second substrate held with a lower holding mechanism; and dechucking the bonded substrate from the upper holding mechanismafter a voltage which attenuates while alternating is applied to the upper holding mechanism. By applying the voltage which attenuates while alternating to the upper holding mechanism, residual attracting force between the bonded substrate and the upper holding mechanismis reduced, thereby enabling the bonded substrate to be dechucked from the holding mechanism more surely in a shorter time period. As a result, the first substrate and the second substrate can be bonded in a shorter time period.

Wafer bonding device and wafer bonding method

A multi-layer bonding method of the present invention includes: forming a first bonded substrate by bonding a first substrate and an intermediate substrate in a bonding chamber; conveying a second substrate inside said bonding chamber when said first bonded substrate is arranged inside said bonding chamber; and forming a second bonded substrate by bonding said first bonded substrate and said second substrate in said bonding chamber. According to such a multi-layer bonding method, the upper-side substrate can be bonded with an intermediate substrate and then a first bonded substrate is bonded with a lower-side substrate without taking out the first bonded substrate from the bonding chamber. For this reason, a second bonded substrate can be produced at high speed and at a low cost.

Bonding unit control unit and multi-layer bonding method

A room temperature bonding apparatus includes angle adjustment means supporting a first sample stage holding a first substrate so as to be able to change a direction of the first sample stage; a first driving device driving the first stage in a first direction; a second driving device driving a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table supporting the second sample stage in the first direction when the second substrate and the first substrate are brought into contact. The apparatus can impose a load exceeding a withstand load of the second driving device on the first and second substrates. Further, the apparatus uses angle adjustment means to change direction of the first substrate to be parallel with the second substrate and uniformly impose the larger load on a bonding surface.

Room temperature bonding apparatus

A room temperature bonding machine is provided with an evacuation apparatus, a gas supply apparatus, a pressure gauge, a cleaner apparatus, a pressure controller and a pressing mechanism. The evacuation apparatus evacuates gas from the chamber. The gas supply apparatus supplies introduction gas into the chamber. The pressure gauge measures the pressure in the chamber. The cleaner apparatus cleans first and second substrates in the chamber when said pressure is at a predetermined degree of vacuum. The pressure controller controls both of the evacuation apparatus and the gas supply apparatus so that the pressure is regulated to a target pressure. The pressing mechanism presses and bonds the first and second substrates when the pressure is set to said target pressure.

Room temperature bonding machine and room temperature bonding method

A room temperature bonding apparatus according to the present invention is provided with a load lock chamber having an internal space which is pressure-reduced; and a cartridge arranged in the load lock chamber. The cartridge includes an island portion formed to contact a substrate when the substrate is put on the cartridge. A flow passage is formed for the island portion to connect a space between the cartridge and the substrate to outside when the substrate is put on the cartridge. Therefore, in the room temperature bonding apparatus can prevent making the substrate is moved to the cartridge due to gas when the internal space is pressure-reduced.

A room temperature bonding apparatus includes: an angle adjustment mechanism that supports a first sample stage holding a first substrate to a first stage so as to be able to change a direction of the first sample stage; a first driving device that drives the first stage in a first direction; a second driving device that drives a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table that supports the second sample stage in the first direction when the second substrate and the first substrate are brought into press contact with each other. In this case, the room temperature bonding apparatus can impose a larger load exceeding a withstand load of the second driving device on the first substrate and the second substrate. Further, the room temperature bonding apparatus can use the angle adjustment mechanism to change a direction of the first substrate such that the first substrate and the second substrate come into parallel contact with each other, and uniformly impose the larger load on a bonding surface.

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Tokyo, Japan

Masato Kinouchi