Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Renesas Electronics Corporation

Nissan Chemical Industries Limited

Tokyo Institute of Technology

Masato Kanno

Yosuke Saito

Sae Miyaji

Yuta Hasegawa

Miki Kimijima

Shinichi Uchida

Shunichi Kaeriyama

Hideaki Mogi

Osamu Enoki

Kenji Nishikawa

Takashi Kawashima

Yasuharu Ujiie

Toshio Nishi

Yuki Negishi

Hajime Kobayashi

Toshinori Kiyohara

Yu Kato

Takehiko Mori

Shinnosuke Hattori

Mika Yonezawa

Yuta Inaba

The present technology relates to a solid-state imaging element, a method for manufacturing a solid-state imaging element, a photoelectric conversion element, an imaging device, and an electronic apparatus that are capable of realizing highly efficient photoelectric conversion of blue light with organic photoelectric conversion element. A first organic semiconductor having a characteristic of absorbing blue light, a second organic semiconductor having a characteristic of absorbing blue light and a characteristic as a hole-transporting material having crystallinity, and a third organic semiconductor including a fullerene derivative are mixed to form an organic photoelectric conversion layer. The present technology can be applied to a solid-state imaging element.

Solid-state imaging element, method for manufacturing solid-state imaging element, photoelectric conversion element, imaging device, and electronic apparatus

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes, as a first organic semiconductor material, a benzothienobenzothiophene-based compound represented by a general formula (1).

Photoelectric conversion element and imaging device

To provide a photoelectric conversion element capable of further improving performance in a photoelectric conversion element using an organic semiconductor material. The photoelectric conversion element includes a first electrode and a second electrode arranged to face each other, and a photoelectric conversion layerprovided between the first electrode and the second electrode, in which the photoelectric conversion layerincludes a first organic semiconductor material and a second organic semiconductor material, and at least one of the first organic semiconductor material or the second organic semiconductor material is an organic molecule having a HOMO volume fraction of 0.15 or less or a LUMO volume fraction of 0.15 or less.

Photoelectric conversion element

A first photoelectric conversion element according to an embodiment of the present disclosure incudes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode and including a chromophore, fullerene or a fullerene derivative, and a hole-transporting material, in which the chromophore and the fullerene or the fullerene derivative are bonded to each other at least partially via a crosslinking group in the photoelectric conversion layer.

Photoelectric conversion element and method of manufacturing photoelectric conversion element

[Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.

Photoelectric conversion device and imaging apparatus

A semiconductor device has a chip mounting part, a first semiconductor chip, and a second semiconductor chip. The first semiconductor chip is mounted over the chip mounting part in a direction in which its first principal plane faces the chip mounting part. A part of the second semiconductor chip is mounted over the chip mounting part in a direction in which its third principal plane faces the first semiconductor chip. The element mounting part has a notch part. A part of the second semiconductor chip overlaps the notch part. In a region of the third principal plane of the second semiconductor chip that overlaps the notch part, a second electrode pad is provided.

Semiconductor device

To provide an organic semiconductor of tetrathiafulvalene derivative and an organic thin-film transistor formed therefrom, the tetrathiafulvalene derivative being readily formed into a stable thin film and the organic thin-film transistor having a high mobility and being driven at a low threshold voltage, an organic semiconductor includes a hexamethylenetetrathiafulvalene compound represented by the formula (1) below, and an organic thin-film transistor having a thin film obtained therefrom (where Rand Reach independently denote an alkyl group which may have a C1-10 branched structure).

Tetrathiafulvalene derivatives and organic thin-film transistor

Growing community of inventors

Tokyo, Japan

Masato Kanno