Kobe Steel, Ltd.

Kobelco Research Institute, Inc.

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Masato Kannaka

Eiji Takahashi

Masakazu Kajita

Hiroyuki Takamatsu

Tsutomu Morimoto

Toshiyuki Tsuji

Kazuhiko Tahara

Noritaka Morioka

Hidetoshi Tsunaki

Hideki Matsuoka

Yuji Yamamoto

Nobuyuki Kawakami

Takayuki Hirano

Kaname Araki

Naokazu Sakoda

Koyo Kegasa

Masaru Akamatsu

Katsuhiko Ozaki

Koichi Akazawa

Yuya Yamamoto

Ryo Katayama

Kunio Iba

Kenji Imanishi

Hiroyuki Kamura

Takuya Atsumi

The state measuring device includes a measurement section attached to the blade portion or to a vicinity of the blade portion to measure a state of the blade portion, an AD converter attached to the cutting tool to acquire a measurement value measured by the measurement section at a predetermined sampling rate and perform AD conversion on the measurement value, a transmission section which transmits, on each acquisition of the measurement value from the AD converter, the acquired measurement value using digital wireless communication, and a monitor device provided outside the cutting tool. The monitor device includes a reception section which receives the measurement value transmitted by the transmission section, and a data management section which causes a display section to display the measurement value and causes a storage section to store the measurement value on each reception of the measurement value by the reception section.

State measuring device and state measuring system

A shape measurement device and a shape measurement method according to the present invention measure, for first and second distance measurement units which are disposed so as to be opposed to each other with a measurement object to be measured interposed therebetween and each measure a distance to the measurement object, first and second displacements of the first and second distance measurement units in an opposition direction, and obtain, as a shape of the measurement object, a thickness of the measurement object in the opposition direction, the thickness being corrected with the measured first and second displacements, based on first and second distance measurement results measured by the first and second distance measurement units, respectively.

Shape measurement device and shape measurement method

A tire shape inspection method comprises a contact face acquisition step of acquiring contact face height changes by removing data outside of a prescribed range from detected tread face height data, a height change interpolation step of interpolating the section removed in the previous step using heights in the prescribed height range and acquiring height changes in the interpolated contact faces, and a runout value acquisition step of acquiring, as a runout value indicating the shape of the tread face, the difference between the maximum value and the minimum value in the height changes of the interpolated contact faces.

Tire shape inspection method and tire shape inspection device

A rotational misalignment between semiconductor wafers constituting a bonded wafer is calculated. A light source is arranged at a position which is on a front side of an opening of a notch and which is separated from an outer edge portion of a bonded wafer by a predetermined interval, and outputs light to irradiate the outer edge portion of the bonded wafer including the notch. A camera receives and photoelectrically converts reflected light that is specularly-reflected by the outer edge portion of the bonded wafer including the notch among the light outputted by the light source in order to output a brightness distribution of the reflected light as an image. A computer analyzes positions of notches from the image outputted by the camera to obtain a notch position misalignment, and further calculates a rotational misalignment between semiconductor wafers using a center position misalignment between the semiconductor wafers.

Rotational misalignment measuring device of bonded substrate, rotational misalignment measuring method of bonded substrate, and method of manufacturing bonded substrate

A tire shape inspection method executes the following steps: first, as a teaching operation step, boundary lines of the bulge and dent marks are detected in a sample source image of a sample tire, a mask image is generated which denotes the boundary lines, regions are removed from the sample source image which correspond to the boundary lines which are denoted in the mask image, and a height offset image is generated which represents the heights of the remaining regions with one or more offset values. Next, as an inspection operation step, the height offset image is subtracted from an inspection image of the inspection tire, the boundary regions which the mask image represents are removed, and, on the basis of the obtained bulge/dent removal image, shape defects of the sidewall surfaces of the inspection tire are inspected.

Tire shape inspection method and tire shape inspection apparatus

A shape determining device (X) splits the original light beam from a light source (Y) into two light beams, directs the light beams to the front and back surfaces of the object () to be determined, and performs optical heterodyne interference using the split light beams at the front and back surfaces of the object () to be determined. In the shape determining device (X), each of the split light beams is further split into a main light beam and a subordinate light beam, the subordinate light beam interferes with the main light beam at each of the front and back surfaces before and after the illumination of the object () to be determined, the signals after the interference are phase-detected, and the difference between the phases acquired by the phase detection is detected at each of the front and back surfaces of the object () to be determined. In the shape determining device (X), optical modulation for performing the optical heterodyne interference is performed before the optical heterodyne interference of the split light beams after the split light beams are directed to the front and back surfaces of the object () to be determined. Furthermore, in the shape determining device (X), a measurement optical system before the phase detection and after the split light beams are directed to the front and back surfaces of the object () to be determined is maintained integrally.

Profile measuring apparatus

A shape determining device includes first and second homodyne interferometers respectively provided for front and back surfaces of an object to be measured and a thickness distribution calculator that calculates a thickness distribution of the object based on intensities of first and second interference light beams respectively detected by the first and second homodyne interferometers for the front and back surfaces of the object at a plurality of measurement sites. The thickness distribution calculator calculates, for each interference light beam for which the intensity is detected by the first and second homodyne interferometers, a phase difference between the polarization components of a corresponding reference light beam and a corresponding object light beam in a corresponding non-interference light beam based on the intensity of the interference light beam, and calculates the thickness distribution based on a distribution of the calculated phase differences.

Shape determining device

It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide filmon a surface of a silicon substrateby plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide filmformed on the substrate; and a removal step of removing a part of the substratein such a manner that a membrane-corresponding part of the silicon oxide filmis supported as a membrane in a hollow state with respect to the substrateto form a recessed part

Membrane structure element and method for manufacturing same

The concentration of impurities contained in ultrapure water or press water can be efficiently analyzed with high precision. A portion of a liquid to be measured is introduced into an absorption spectrometric portion from a predetermined line. The liquid is irradiated with exciting light from an exciting light irradiation system, and a measurement object region in which a photothermal effect of the impurities in the liquid is produced by the irradiation is irradiated with measuring light from a measuring light irradiation system. A change in phase of the measuring light is detected by a predetermined optical system and a photodetector, and the impurity concentration in the liquid is determined on the basis of the change in phase.

Analyzer for absorption spectrometry of impurity concentration contained in liquid using exciting light

A shape measuring apparatus and a shape measuring method suited for measuring an edge profile of a thin sample such as a semiconductor wafer or the like is provided. A distribution of surface angle and an edge profile of a measurement site is calculated by emitting light at sequentially different angle to the measurement site of a wafer by sequentially switching and lighting a plurality of LEDs each disposed at one of plurality of positions in one plane by an LED driving circuit, obtaining an image data showing a luminance distribution of the reflected light form the measurement site through a camera by a calculator each time light is emitted and, estimating an emitting angle of the light when the luminance of the reflected light becomes peak based on image data and emitting angle of the light corresponding to each LED by the calculator.

Apparatus and method for measuring shape

A liquid sample is irradiated with excitation light and measurement light, and a measurement position at which a traveling path of the measurement light passes through an excitation section of the excitation light in the sample is changed while the sample is being irradiated with the excitation light and the measurement light. Then, the phase change of the measurement light is measured for each measurement by optical interferometry on the basis of the measurement light after the measurement light passes through the sample. The measurement position is changed by, for example, scanning the excitation light, moving the sample, moving a lens that collects the excitation light in the sample so as to change the light-collecting position (focal position) in the sample, etc.

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Kobe, Japan

Masato Kannaka