Tokyo Electron Limited

Tokyo Electron Tohoku Limited

Masato Kadobe

Hiromi Nitadori

Kazuhiko Kato

Hirofumi Kaneko

Shingo Watanabe

Kazunari Sakata

Hiroyuki Iwai

Katsuhiko Anbai

Masayuki Oikawa

Kazuyuki Kikuchi

Naomi Onodera

Shinya Nasukawa

Hiroki Fukushima

Isao Furuya

A piping structure includes a plurality of pipes that connects a plurality of process modules disposed adjacent to each other at a first room and a plurality of vacuum pumps disposed at a second room below the first room to be corresponding to the plurality of process modules, respectively. The plurality of pipes are divided into a plurality of blocks in a height direction, and the plurality of pipes used for blocks in an identical height have an identical shape.

Piping structure and processing apparatus

There is provided a processing apparatus including: a processing part including a plurality of process modules connected to each other in a first room, and a loader module provided in the first room and accommodating a carrier which receives a substrate processed by each of the plurality of process modules; and a plurality of pump units corresponding to the plurality of process modules, respectively, and arranged in a second room adjacent to the first room, wherein an installation area of the plurality of pump units is equal to or smaller than that of the processing part.

Processing apparatus

A processing apparatus includes: a plurality of process modules concatenated with one another; and a loader module configured to receive a carrier accommodating a plurality of substrates to be processed by the plurality of process modules, wherein each of the plurality of process modules includes: a heat treatment unit including a processing container configured to accommodate the plurality of substrates and perform a heat treatment on the plurality of substrates; and a gas supply unit disposed on one side surface of the heat treatment unit and configured to supply a gas into the processing container.

A disclosed thermal treatment apparatus includes a supporting member where plural substrates are supported in the form of shelves; a reaction tube that accommodates the supporting member within the reaction tube, and is provided with plural gas supplying pipes arranged in a side part of the reaction tube, thereby allowing a gas to flow into the reaction tube through the plural gas supplying pipes; and a first heating part that heats the plural substrates supported by the supporting member accommodated within the reaction tube, wherein the first heating part includes a slit that extends from a bottom end to a top end of the first heating part and allows the plural gas supplying pipes to go therethrough, and wherein an entire inner surface, except for the slit, of the heating part faces the side part of the reaction tube.

Thermal treatment apparatus

The present invention is a quartz-product baking method for baking a first quartz product and a second quartz product to remove a metal contained therein, the first and second quartz products being to be loaded into a heat-processing apparatus for heat-processing a semiconductor substrate so that at least a part of each quartz product is brought into contact with a heat-processing atmosphere of the heat-processing apparatus, the quartz-product baking method comprising the steps of: with the use of a jig including a first jig element and a second jig element that are disengageably stacked in a tier-like manner, placing the first quartz product on the first jig element, stacking the second jig element on the first jig element, and placing the second quartz product on the second jig member; placing on a lid member the jig in which the quartz products are placed in a tier-like manner, elevating the lid member to load the jig into a baking vertical vessel through a lower opening thereof, and hermetically sealing the lower opening of the baking vertical vessel with the lid member; heating an atmosphere in the baking vertical vessel; and supplying a baking gas containing a hydrogen chloride gas and a gas for enhancing reactivity of the hydrogen chloride gas, into the baking vertical vessel.

Quartz-product baking method and quartz product

A vertical heat treatment system for heat treating a large number of semiconductor wafers housed in a boat at once includes a heat treatment unit having a boat loading/unloading port, a boat section communicating with the heat treatment unit through the boat loading/unloading port, an elevator mechanism for loading/unloading the boat between the boat section and the heat treatment unit through the boat loading/unloading port, a cassette section provided adjacent to the boat section, a wafer transfer mechanism for transferring wafers between a cassette and the boat, a gas supply mechanism for supplying a non-oxidization gas into the boat section, and a gas shower means for blowing the non-oxidization gas to the wafers in the vicinity of the boat loading/unloading port.

Growing community of inventors

Oshu, Japan

Masato Kadobe