Advanced Lcd Technologies Development Center Co., Ltd.

Japan Display Inc.

Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center

Kabushiki Kaisha Toshiba

Sharp Kabushiki Kaisha Corporation

Toshiba Mobile Display Co., Ltd.

Masato Hiramatsu

Masakiyo Matsumura

Masayuki Jyumonji

Yoshinobu Kimura

Hiroyuki Ogawa

Mikihiko Nishitani

Yukio Taniguchi

Arichika Ishida

Yoshitaka Yamamoto

Fumiki Nakano

Tomoya Kato

Noritaka Akita

Hajime Watakabe

Yasushi Kawata

Yasukazu Kimura

Toshihiko Itoga

Masayoshi Fuchi

Takuma Nishinohara

Koji Suzuki

Mitsuo Nakajima

Yoshio Takami

Takaaki Kamimura

Yoshiaki Nakazaki

Masaki Kado

Hideo Koseki

Toshiya Kiyota

Mikio Murata

A display device includes a substrate having flexibility, a transistor having a gate insulating film and further having a semiconductor layer and a gate electrode that sandwich the gate insulating film, the transistor formed in an area where the substrate is bent, and a gate wiring line so formed on the substrate as to be connected to the gate electrode, and the gate electrode has an area that is present in an area where the gate electrode overlaps with the semiconductor layer and is thinner than at least part of the gate wiring line.

Semiconductor device including a flexible substrate

A display device including a substrate, a display region, a periphery region outside of the display region, a terminal part arranged with a plurality of terminal electrodes in the periphery region, a wiring arranged between the display region and the terminal part, a plurality of inorganic insulation layers, and an organic insulation film arranged between the display region and the terminal part. At least one of the plurality of inorganic insulation layer extends between the display region and the terminal part and includes an opening part between the display region and the terminal part, the organic insulation film is arranged overlapping the opening part, the organic insulation film has a larger film thickness at a center part than an end part of the opening part, and the wiring is arranged along an upper surface of the organic insulation film.

Display device and method of manufacturing display device

According to one embodiment, a display device includes an underlying insulation layer formed on a surface of a resin layer, and a thin-film transistor formed above the surface of the resin layer via the underlying insulation layer. The underlying insulation layer includes a three-layer multilayer structure of a first silicon oxide film, a silicon nitride film formed above the first silicon oxide film, and a second silicon oxide film formed above the silicon nitride film.

Method of manufacturing display device having a multilayered undercoating layer of silicon oxide and silicon nitride

Flexible semiconductor device and flexible display device

According to one embodiment, a display device includes a first base, a second base, a middle layer including a metal layer located between the first base and the second base, and a circuit unit and a display element unit located above the second base.

Electronic device including middle layer located between first base and second base and manufacturing method of the same

Display device including middle layer with varied nitrogen content located between first and second bases and manufacturing method of the same

Display device having a multilayered undercoating layer of silicon oxide and silicon nitride

According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.

Thin-film transistor and method for manufacturing the same

According to one embodiment, a liquid crystal display device includes an array substrate including a first color filter configured to transmit light in a first wavelength range, a second color filter configured to transmit light in a second wavelength range of greater wavelengths than the first wavelength range, a first switching element disposed above the second color filter, a second switching element disposed above the second color filter, a first pixel electrode which is electrically connected to the first switching element and is located above the first color filter, and a second pixel electrode which is electrically connected to the second switching element and is located above the second color filter.

Liquid crystal display device

Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.

Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film

There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus

A structure of a plurality of thin film transistors wherein a peripheral circuit on a glass substrate of a liquid crystal display panel; and each of polycrystalline silicon thin filmof the thin film transistor is formed on the glass substrate; and each of gate electrodeis formed on a gate insulation layer, and each of the gate electrodeis overhead corresponding to the polycrystalline silicon thin filmfor a channel; wherein the gate electrodeis comprised a pair of projection partA and a gate-channelB; and wherein the pair of projection partA is formed the both sides of the gate-channelB in which the side is for along the channel-direction, and wherein the pair of projection partA is enlarged for across the channel-direction.

Structure of thin film transistors and liquid crystal display device having the same

A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting substrate and modules the phase of incident light. A light-shielding portion which shields light in the peripheral portion where the optical intensity distribution decreases of the phase modulator is formed on the laser beam incident surface or exit surface of the phase shifter, thereby shielding the peripheral light in the irradiation surface of the incident laser beam.

Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method

Growing community of inventors

Tokyo, Japan

Masato Hiramatsu