Nikon Corporation

Sony Corporation

Siemens Audiologische Technik Gmbh

Masato Hamatani

Hiroki Kikuchi

Yushi Kaneda

Shigeru Hagiwara

Toshiharu Nakashima

Toshio Tsukakoshi

Shunji Watanabe

Tohru Kiuchi

Masahiro Nei

Masahiko Okumura

Takeyuki Mizutani

Shinobu Atsumi

Tatsuya Kitamoto

A method for quickly removing pollutants adhered to a predetermined optical member in an optical system. To remove the pollutants adhered to a lens (A) disposed at the upper end of a projection optical system (PL), a cylindrical protecting member () is disposed through the openings in a reticle stage () and a reticle base (). The bottom surface of a support section () at the tip section of a rod section () is brought into contact with the surface of the lens (A) through the inner surface of the protecting member (). A wiping cloth soaked with a washing solution containing hydrofluoric acid is attached to the bottom surface of the support section (). The support section () is reciprocated via the rod section () to remove the pollutants on the lens (A) with the wiping cloth.

Pollutant removal method and apparatus, and exposure method and apparatus

An exposure apparatus comprises a liquid immersion system, a first mover, and a prescribed member. The exposure apparatus exposes a substrate via an optical member and a liquid. The liquid immersion system performs supply and recovery of the liquid. The first mover can move in a first area, and can hold the liquid between itself and the optical member. The prescribed member is removed from the first mover when the first mover withdraws from a position opposing the optical member, and can hold the liquid between itself and the optical member.

Exposure apparatus, exposure method, and device manufacturing method

An exposure apparatus for transferring a pattern onto an object via a projection optical system, including a moving body arranged on an image plane side with respect to the projection optical system, a wave-front measuring unit at least a part of which is arranged in the moving body, and which measures wave-front information of the projection optical system, an adjusting unit that adjusts a state of an image of a projected pattern generated on the object via the projection optical system, and a controller that controls the adjusting unit using the wave-front information and Zernike Sensitivity corresponding to exposure conditions of the object.

Specification determining method, projection optical system making method and adjusting method, exposure apparatus and making method thereof, and computer system

A computer system comprises a first computer into which target information that an optical apparatus is to achieve is inputted and a second computer that determines the specification of a projection optical system based on the target information received from the first computer via a communication path with using a wave-front aberration amount, which the projection optical system is to satisfy, as a standard. Therefore, in the process of making the projection optical system, higher-order components of the aberration as well as lower-order components can be simultaneously corrected by adjusting the projection optical system based on the result of measuring the wave-front aberration to satisfy the specification, so that the making process becomes simpler. Furthermore, the target that the exposure apparatus is to achieve is securely achieved due to the projection optical system.

In the exposure apparatus of the present invention, a sealed chamber defined by a first lens and a second lens in an input lens system on a plane of incidence of a fly-eye lens in an illumination optical system is provided. In a gas exchanging step, the impurity gas in the sealed chamber is first exhausted through an electromagnetic valve provided with a check valve and a gas exhaust pipe, using a gas exhaust pump and then, a high-purity nitrogen gas is supplied from a gas bomb through a gas supply pipe and an electromagnetic valve provided with a check valve to the sealed chamber. Using a pressure sensor provided in the sealed chamber, the gas exchanging step is repeated while maintaining an amount of change in pressure in the sealed chamber within a predetermined allowable range, to thereby reduce the concentration of impurities in the gas in the sealed chamber to a target value.

Exposure apparatus

A projection exposure apparatus for transferring a pattern formed on a mask onto a photosensitive substrate by a scanning exposure method, includes a light source for generating a light beam having a predetermined spatial coherence, an illumination optical system for receiving the light beam from the light source and illuminating a local area on the mask with the light beam, and a device for synchronously moving the mask and the photosensitive substrate so as to transfer the pattern on the mask onto the photosensitive substrate. A direction, corresponding to a higher spatial coherence of the light beam, is made to coincide with the direction of relative scanning an illumination area and the mask in the illumination area.

Scanning exposure apparatus

A laser apparatus comprises a plurality of laser beam sources which use, as laser media, mixed gases containing at least one common gas component; at least one common gas supply source for supplying, to the respective laser beam sources, the common gas component for constituting the mixed gases; and one or more gas flow amount-adjusting units for adjusting flow amounts of the common gas component supplied from the common gas supply source and other gas components for constituting the mixed gases so that the gas components are supplied to the respective gas laser beam sources. It is unnecessary to provide gas tanks for each of the laser beam sources. The arrangement of the gas supply equipment is simplified, and the safety is improved. A plurality of the laser apparatuses are preferably installed to a circuit element production line provided with a plurality of exposure apparatuses.

Laser apparatus, exposure apparatus, lithography system, method for producing circuit elements, gas supply system and gas supply method

A semiconductor light exposure device reducing coherency of laser light to an appropriate value by a simplified structure without producing speckles. The semiconductor light exposure device includes an ultraviolet light generating device, a uniform illumination device having the operation of inducing an optical path length difference and a projection device for projecting the laser light from the uniform illumination device. The ultraviolet light generating device includes an Nd:YAG Q-switch laser unit with a wavelength of 1064 nm, oscillated with a longitudinal single mode, a phase modulation unit or phase-modulating the fundamental laser light outgoing from the Nd:YAG Q-switch laser unit with voltage signals having plural frequency components, and a wavelength conversion unit for converting the wavelength of the fundamental laser light phase-modulated by the phase modulation unit into an ultraviolet laser light with a wavelength of 213 nm as a fifth harmonics.

Semiconductor exposure device

A laser optical apparatus permits the use of a laser beam having a spectrum characteristic which substantially overlaps with an absorption band of oxygen, with a simple construction. Oxygen in a lens barrel of an optical system or a sealed space between lens barrels is absorbed by a deoxidation agent. Accordingly, even if a laser beam by an excimer laser using argon fluoride having a spectrum characteristic which substantially overlaps with the absorption of oxygen is passed through the optical system, the loss of laser energy by the absorption of oxygen, the generation of noxious gas and the swing due to the change of transmission are prevented.

Growing community of inventors

Kounosu, Japan

Masato Hamatani