Tokyo Electron Limited

Masato Hamada

Tomohisa Hoshino

Satoshi Kaneko

Takashi Tanaka

Yuichiro Inatomi

Toshiyuki Matsumoto

Yusuke Saito

Kiyomitsu Yamaguchi

Keiichi Fujita

An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate includes a base body having a flat plate shape; an electrode provided at the base body; three or more terminals provided at the base body, each having elasticity and configured to be brought into contact with a peripheral portion of the processing target substrate; and a detecting unit configured to electrically detect a contact of at least one of the terminals with the processing target substrate.

Electrolytic processing jig and electrolytic processing method

An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.

An electrolytic treatment apparatus(A) configured to perform an electrolytic treatment on a target substrate includes a substrate holderand an electrolytic processor. The substrate holderincludes an insulating holding bodyconfigured to hold the target substrate and an indirect negative electrodedisposed within the holding body. A negative voltage is applied to the indirect negative electrode. The electrolytic processoris disposed to face the substrate holderand configured to apply a voltage to the target substrate and an electrolyte in contact with the target substrate.

Electrolytic treatment apparatus and electrolytic treatment method

A manufacturing apparatus for a semiconductor device includes a substrate holding unit configured to hold a substrate; a processing liquid supply unit configured to supply a processing liquid onto the substrate held by the substrate holding unit; an electrolytic processing unit disposed to face the substrate holding unit and configured to perform an electrolytic processing on the substrate held by the substrate holding unit; and a terminal configured to apply a voltage to the substrate. The electrolytic processing unit includes a direct electrode configured to be brought into contact with the processing liquid supplied onto the substrate to apply a voltage with respect to the substrate; and an indirect electrode configured to form an electric field in the processing liquid supplied onto the substrate.

Manufacturing apparatus and manufacturing method for semiconductor device

A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

Substrate processing method

An electrolytic treatment apparatus of the present disclosure includes a common electrode and a counter electrode that are disposed such that the treatment liquid is interposed therebetween. A first wiring and a second wiring are connected to the common electrode, a capacitor is provided in the first wiring. Copper ions are moved to the counter electrode side by forming an electric field in the treatment liquid when the capacitor is charged without connecting the first wiring and the second wiring to each other, and the copper ions moved to the counter electrode side are reduced by applying a voltage between the common electrode and the counter electrode when the capacitor is discharged by connecting the first wiring and the second wiring to each other.

An adhesion layer formed of a thin film can be formed on a surface of a substrate. An adhesion layer forming method of forming the adhesion layer on the substrate includes supplying a coupling agent onto the substratewhile rotating the substrate. The substrateis rotated at a low speed equal to or less than 300 rpm and the coupling agent diluted with IPA is supplied onto the substrate

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Kumamoto, Japan

Masato Hamada