Kioxia Corporation

Kloxia Corporation

Masato Dome

Masaru Koyanagi

Ryo Fukuda

Kensuke Yamamoto

Junya Matsuno

Kenro Kubota

Kei Shiraishi

Kazuhiko Satou

According to one embodiment, a semiconductor memory device includes: first and second circuit units, a driver circuit, an input/output pad, first and second power supply pads, and first and second interconnects. The first interconnect is configured to provide coupling between the first circuit unit and the first power supply pad. The second interconnect is configured to provide coupling between the second circuit unit and the first power supply pad and have no electrical coupling to the first interconnect.

Semiconductor memory device

A device includes a memory cell array configured to store data; and a signal propagation circuit configured to propagate a signal between the memory cell array and a host. The signal propagation circuit includes a first inverted signal output circuit, a second inverted signal output circuit including an input terminal connected to i) an output terminal of the first inverted signal output circuit and ii) an output terminal of the second inverted signal output circuit, a third inverted signal output circuit including an input terminal connected to i) the output terminal of the first inverted signal output circuit and ii) the output terminal of the second inverted signal output circuit, and a fourth inverted signal output circuit including an input terminal connected to i) an output terminal of the third inverted signal output circuit and ii) an output terminal of the fourth inverted signal output circuit.

Memory device

A semiconductor device includes a first circuit configured to receive a first signal, and output a first voltage to a first node in accordance with a voltage of the first signal being at a first level and output a second voltage to the first node in accordance with the voltage of the first signal being at a second level, the first voltage being higher than the second voltage. A second circuit is coupled to the first node and is configured to latch data based on a voltage of the first node; and a third circuit is coupled to the first node and is configured to output a third voltage to the first node while the first circuit is outputting the first voltage to the first node, and to output a fourth voltage to the first node while the first circuit is outputting the second voltage to the first node, the third voltage being lower than the first voltage, and the fourth voltage being higher than the second voltage.

Semiconductor device

A semiconductor memory device includes a memory cell array and a signal propagation circuit disposed on a propagation path of a signal or a control signal. The signal propagation circuit includes a first inverted signal output circuit; a second inverted signal output circuit including an input terminal connected to an output terminal of the first inverted signal output circuit; a third inverted signal output circuit including an input terminal connected to output terminals of the first inverted signal output circuit and the second inverted signal output circuit; a fourth inverted signal output circuit including an input terminal connected to an output terminal of the third inverted signal output circuit, and further including a terminal connected to output terminals of the third inverted signal output circuit and the fourth inverted signal output circuit.

A semiconductor storage device including an output pad, a first circuit connected to the output pad, a second circuit connected to the first circuit, a third circuit configured to output a first setting signal for controlling the first circuit accordance with a characteristic variation of the first circuit, and a fourth circuit configured to generate a second setting signal for controlling the second circuit in accordance with the first setting signal received from the third circuit and output the second setting signal to the second circuit.

Semiconductor storage device

According to an embodiment, a semiconductor device includes a first circuit, a second circuit, and a third circuit. The first circuit is configured to receive a first signal, and output a first voltage to a first node in accordance with a voltage of the first signal being at a first level and output a second voltage to the first node in accordance with the voltage of the first signal being at a second level. The first voltage is higher than the second voltage. The second circuit is coupled to the first node and configured to latch data based on a voltage of the first node. The third circuit includes a first inverter. The first inverter includes a first input terminal coupled to the first node and a first output terminal coupled to the first node.

According to one embodiment, a semiconductor memory device includes: a memory cell array and a signal propagation circuit disposed on a propagation path of a signal or a control signal, wherein the signal propagation circuit includes: a first inverted signal output circuit; a second inverted signal output circuit including an input terminal connected to an output terminal of the first inverted signal output circuit; a third inverted signal output circuit including an input terminal connected to output terminals of the first inverted signal output circuit and the second inverted signal output circuit; a fourth inverted signal output circuit including an input terminal connected to an output terminal of the third inverted signal output circuit; and a fifth inverted signal output circuit including an input terminal connected to output terminals of the third inverted signal output circuit and the fourth inverted signal output circuit.

A non-volatile semiconductor memory device including: a first pad transmitting/receiving a data signal transmitted via a first signal line to/from a memory controller; a second pad transmitting/receiving a strobe signal transmitted via a second signal line to/from the memory controller, the strobe signal specifying a timing of transmitting/receiving the data signal; and a third pad receiving an output instruction signal via a third signal line from the memory controller, the output instruction signal instructing a transmission of the data signal; wherein the non-volatile semiconductor memory device outputs the data signal from the first pad to the memory controller, outputs the strobe signal from the second pad to the memory controller, performs a first calibration operation calibrating the data signal, and performs a second calibration operation calibrating the strobe signal, based on a toggle timing of the strobe signal associated with the output instruction signal.

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Yokohama Kanagawa, Japan

Masato Dome