Toyoda Gosei Co., Ltd.

Toyota Gosei Co., Ltd.

Masato Aoki

Yoshiki Saito

Koji Okuno

Satoshi Wada

Miki Moriyama

Koichi Goshonoo

Yasuhisa Ushida

Tetsuya Taki

Kazuki Nishijima

Yusuke Toyoda

Mitsuhisa Narukawa

Shuhei Yamada

The present techniques provide a method for producing a Group III nitride semiconductor light-emitting device, with suppression of an increase in polarity inversion defect density. The production method includes an n-type semiconductor layer formation step, a light-emitting layer formation step, and a p-type semiconductor layer formation step. The p-type semiconductor layer formation step includes a p-type cladding layer formation step. The p-type cladding layer formation step includes a first p-type semiconductor layer formation step for forming a p-type AlGaN layer, a first semiconductor layer growth intermission step after the first p-type semiconductor layer formation step, and a p-type InGaN layer formation step after the first semiconductor layer growth intermission step. In the first semiconductor layer growth intermission step, a mixture of nitrogen gas and hydrogen gas is supplied to the substrate.

Method for producing group III nitride semiconductor light-emitting device

The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission output. The light-emitting device comprises an n-type contact layer on which an n-electrode is formed, a light-emitting layer, an n-type cladding layer formed between the light-emitting layer and the n-type contact layer. The n-type cladding layer has a structure of at least two layers including a first n-type cladding layer closer to the light-emitting layer and a second n-type cladding layer farther from the light-emitting layer than the first n-type cladding layer. The first n-type cladding layer has a Si concentration higher than that of the second n-type cladding layer, and the first n-type cladding layer has a thickness smaller than that of the second n-type cladding layer.

Group III nitride semiconductor light-emitting device

A group III nitride compound semiconductor light emitting device that inhibits occurrence of dislocation in a strain relaxation layer in forming a group III nitride compound semiconductor layer on a thin GaN substrate, and a method for producing the same are provided. A light emitting devicecomprises a support substrate, a GaN substrate, an n-type contact layer, a strain relaxation layer(n-type InGaN layer), a light emitting layer, a p-type clad layer, and a p-type contact layer. The GaN substratehas a thickness in a range of from 10 nm to 10 &#x3bc;m. The strain relaxation layer(n-type InGaN layer) has an In composition ratio X in a range of from larger than 0 to 3%.

Group III nitride compound semiconductor light emitting element and method for producing the same

A method for producing a group III nitride semiconductor light-emitting device, by which a non-light-emitting region is easily formed, is disclosed. Mg is activated to convert a p-type layer into p-type, and a p-electrode is then formed on the p-type layer. An Ag paste is applied to a region on the p-electrode and overlapping an n-electrode formed in a subsequent step. Heat treatment is conducted to solidify the Ag paste, thereby forming an Ag paste solidified body. By this, a region overlapping the Ag paste solidified body in a planar view, of the p-type layer converts into a region having high resistance, and a high resistance region is formed. As a result, a region overlapping the high resistance region in a planar view, of a light-emitting layer becomes a non-light-emitting region.

Group III nitride semiconductor light-emitting element and method for producing the same

An object of the present invention is to remove micro-scratches on a surface of a GaN substrate cut from a GaN ingot. The invention is directed to establish a method for surface treatment of a GaN substrate, including heating the surface in an atmosphere containing trimethylgallium, ammonia, and hydrogen. It is preferable that the trimethylgallium feeding rate is 150 &#x3bc;mol/min or higher, the ratio of trimethylgallium feeding rate to ammonia feeding rate (V/III ratio) is 1,200 to 4,000, and the heating temperature is 1,000&#xb0; C. to 1,250&#xb0; C. In addition, the temperature of the surface treatment is set to be higher than that of the following GaN growth, and the feed rate of trimethylgallium is lower than that of the growth procedure. RMS of roughness on the substrate was equal to or less than 1.3 nm, and the substrate whose step condition is excellent can be obtained.

Method for producing group III nitride-based compound semiconductor

A Group III nitride-based compound semiconductor light-emitting device having a quantum well structure, includes a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provided in the vicinity of the interface between the first layer and the well layer, and a second region provided in the vicinity of the interface between the second layer and the well layer. A composition of the first and second regions gradually changes such that the lattice constants of the first and second layers approach the lattice constant of the well layer as a position approaches said well layer.

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Kiyosu, Japan

Masato Aoki