Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Masatake Hangai

Koji Yamanaka

Moriyasu Miyazaki

Shintaro Shinjo

Yutaro Yamaguchi

Morishige Hieda

Tamotsu Nishino

Tadashi Takagi

Kenichi Miyaguchi

Ryota Komaru

Yukihisa Yoshida

Kazuhiro Nishida

Takumi Sugitani

Takuma Torii

Satoshi Yamaguchi

Takashi Maruyama

Yoshitsugu Yamamoto

Masaomi Tsuru

Kenichi Tajima

Masataka Otsuka

Kazutomi Mori

Yukihiro Tahara

Shinnosuke Soda

Kenji Kawakami

Yukinobu Tarui

Yoji Isota

Takaaki Yoshioka

Jun Kamioka

Yoshifumi Kawamura

Naoyuki Yamamoto

Tomohiro Otsuka

Kei Fukunaga

Mikio Hatamoto

Norihiro Yunoue

Hideki Hatakeyama

Satoshi Hamano

A phase shifter includes: a first all-pass filter; a second all-pass filter; a first switching switch to provide a signal to either one of the first all-pass filter and the second all-pass filter; and a second switching switch to select the signal having passed through the first all-pass filter or the signal having passed through the second all-pass filter, wherein the first all-pass filter includes two inductors and three capacitors, and the second all-pass filter includes two inductors and three capacitors, or the first all-pass filter includes three inductors and two capacitors, and the second all-pass filter includes three inductors and two capacitors, and element values of elements included in the first all-pass filter and element values of elements included in the second all-pass filter are determined by impedance at which impedance matching is achieved, a frequency of the signal, and a variable.

Phase shifter comprising selectable first and second all-pass filters, where the all-pass filters include capacitors and inductors of determined values to achieve impedance matching

Gate fingers extending symmetrically from both sides of gate connecting portions, drain electrodes adjacent to both the gate fingers extending from both the sides of the gate connecting portions, and source electrodes respectively adjacent to the gate fingers extending from both the sides of the gate connecting portions are included. Gate air bridges connect the gate connecting portions and a gate routing line while straddling the source electrodes.

Semiconductor device

Provided is an amplifier including: a first transistor connected to a signal input terminal; a second transistor connected to a signal output terminal; a wiring line configured to connect the first transistor and the second transistor to each other; and a variable inductor circuit which is electrically connected to the wiring line, and is grounded via a capacitor for DC current interruption, wherein the inductance value of the variable inductor circuit is set to an inductance value for canceling a parasitic capacitance between the first transistor and the second transistor.

Amplifier

A high-frequency power amplifier is configured in such a way as to include an input matching circuit, an amplifying element, an output matching circuit, a coupling circuit, a detection circuit, and an output terminal, and in such a way that either the input matching circuit or the output matching circuit has an active element, the detection circuit receives a signal outputted by the coupling circuit and outputs a control voltage into which the detection circuit converts the signal to the active element, and the active element changes the impedance of the active element in accordance with the control voltage outputted by the detection circuit, thereby changing the power of a signal outputted by either the input matching circuit having the active element or the output matching circuit having the active element, to change the power of a signal which the coupling circuit outputs to the output terminal.

High-frequency power amplifier

CRLH lines including left-handed shunt inductors and left-handed series capacitors are provided on gate side transmission lines of a plurality of FETs.

Distributed amplifier

A stub whose end is connected to an end of a transmission line, and a coupled line disposed in parallel with each of the transmission line and the stub, and electromagnetically coupled to each of the transmission line and the stub are included, and the stub and the coupled line operate as a first resonator for resonating with an odd order harmonic included in the amplified signal, and the transmission line, the stub, and the coupled line operate as a second resonator for resonating with an even order harmonic included in the amplified signal.

Power amplifier and filter

A first inductor is connected to an input terminal through a capacitive element. To the first inductor, an anti-parallel diode pair including a first diode and a second diode, and a second inductor are connected. The first inductor and the anti-parallel diode pair are coupled to each other by an electromagnetic field, thereby forming a coupling capacitance.

Limiter circuit

In a semiconductor device including gate fingers each having a linear shape extending from a feed line, and arranged in areas between drain electrodes and source electrodes, open stubs are connected directly to the feed line.

A switch element is arranged between an input terminal and an output terminal. A signal from the input terminal is distributed by a capacitative element and supplied to the cathode side of a diode. An inductor is connected to the cathode side of the diode, and a smoothing circuit including a capacitative element and a resistor is connected to the anode side. The switch element has a control terminal connected to the anode of the diode, and turns off a path between the input terminal and the output terminal when a voltage is applied to the control terminal.

A semiconductor device includes: an underlying substrate; a semiconductor layer formed on the underlying substrate; electrode patterns in which a drain electrode and a source electrode are alternately arranged along an array direction determined in advance, on the semiconductor layer; and a group of gate fingers each having a shape extending in an extending direction which is different from the array direction. Each of the gate fingers is disposed in a region between the drain electrode and the source electrode. Moreover, the gate fingers are arranged at positions displaced from one another in the extending direction.

A plurality of gate finger electrodes () is each arranged in a manner alternately adjacent to a corresponding one of drain electrodes () and a corresponding one of source electrode (). The plurality of gate finger electrodes () is each connected to a corresponding one of gate routing lines (). A resistor () has one end separating the gate routing lines () on respective two sides at a center portion between the gate routing lines (), and has another end connected to an input line (). Capacitors () are arranged on the respective two sides with respect to the resistor () and each connected to the corresponding gate routing line () by a corresponding one of air bridges ().

A high-frequency power amplifier is configured to include plural island patterns () in which ends thereof are arranged in the vicinity of a transmission line () and other ends thereof are arranged in the vicinity of an end line () in a transmission line (), a wire () for connecting an end of an island pattern () and the transmission line (), and a wire () for connecting another end of the island pattern () and the end line () of the second transmission line (), so that a mismatch of the impedance component having a resistance component and a reactance component can be compensated for by changing the number of first connecting members and the number of second connecting members, the first and second connecting members configured to connect an island pattern () to the transmission lines () and ().

Gate fingers (-to-) are arranged in one direction and each of the gate fingers is disposed so as to be adjacent to a corresponding one of drain electrodes (-to-) and a corresponding one of source electrodes (-to-) alternately, and have non-uniform gate head lengths.

There are provided: a first capacitor connected between first and second input/output terminals; a second capacitor connected between the first input/output terminal and a third input/output terminal; a first inductor having one end connected to the first input/output terminal; a second inductor having one end connected to the second input/output terminal and another end connected to another end of the first inductor; a third inductor having one end connected to the first input/output terminal; a fourth inductor having one end connected to the third input/output terminal and another end connected to another end of the third inductor; a first transistor having a drain terminal connected to said another ends of the first and second inductors and a source terminal that is grounded; and a second transistor having a drain terminal connected to said another ends of the third and fourth inductors and a source terminal that is grounded.

High frequency switch

The antenna device includes: an element parthaving an excitation element, a first passive elementhaving first and second conductive partsand, a second passive elementhaving third and fourth conductive partsand, a first switchcontrolling conduction between the first and second conductive parts, and a second switchcontrolling conduction between the third and fourth conductive parts; and a controlleroutputting an electric signal for controlling conduction of the first and second switches. The controller outputs identical DC signal to the first and second switches, and one of the first and second switches is brought into conduction while the other one is brought out of conduction.

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Tokyo, Japan

Masatake Hangai