Ube Industries, Inc.

Other

Masataka Yamanaga

Takafumi Kawano

Koichi Fukuda

Masataka Fujinaga

Shinsuke Jida

Takuma Sakai

Kazuki Iwashita

Takayuki Ueda

Atsushi Okabe

Shinji Fukuda

Sumio Terada

Yuki Nagao

Okabe Atsushi

A method of manufacturing a wavelength conversion member including a polycrystalline ceramics includes mixing a substance serving as a silicon source, a substance serving as an aluminum source, a substance serving as a calcium source, and a substance serving as a europium source; firing the obtained mixture to obtain an oxynitride phosphor powder; then sintering the oxynitride phosphor powder in an inert atmosphere to obtain the polycrystalline ceramics, characterized in that the sintered oxynitride phosphor powder has a composition (excluding oxygen) represented by the Formula: CaEuSiAlON(in the Formula, x1, x2, y, and z are values such that 0&#x3c;x1&#x2266;3.40, 0.05&#x2266;x2&#x2266;0.20, 3.5&#x2266;y&#x2266;7.0, 0&#x2266;z&#x2266;1).

Wavelength conversion member and light-emitting device employing same

There is provided a dielectric ceramic composition for high-frequency use represented by a composition formula of a(Sn,Ti)O-bMgSiO-cMgTiO-dMgSiO. In the composition formula, a, b, c and d (provided that a, b, c and d are mol %) are within the following ranges: 4&#x2266;a&#x2266;37, 34&#x2266;b&#x2266;92, 2&#x2266;c&#x2266;15 and 2&#x2266;d&#x2266;15, respectively, and a+b+c+d=100. The dielectric ceramic composition for high-frequency use has a relative permittivity &#x2208;of 7.5-12.0, a Q&#xd7;fvalue of not less than 50000 (GHz) and an absolute value of a temperature coefficient &#x3c4;of resonance frequency fof not more than 30 ppm/&#xb0; C.

Dielectric ceramic composition for high-frequency use and method for producing the same, as well as dielectric ceramic for high-frequency use and method for producing the same and high-frequency circuit element using the same

A low temperature sinterable dielectric ceramic composition is obtained by bending 2.5-20 parts by weight of a glass component per 100 parts by weight of an aggregate of dielectric particles which are composed of Ti-containing dielectric material and contain an oxide including Ti and Zn in the surface portions. A low temperature sintered dielectric ceramic is produced by sintering this low temperature sinterable dielectric ceramic composition at 880 to 1000&#xb0; C. With this low temperature sinterable dielectric ceramic composition, there can be obtained a multiplayer electronic component having an internal conductor composed of Ag, Cu or an alloy containing at least one of them.

Dielectric particle aggregate comprising a surface layer of zinc titanate, low temperature sinterable dielectric ceramic composition using same

The dielectric ceramic composition of the first aspect of the invention comprises an essential component having a compositional formula of xBaO-yTiO -zNd O (wherein 0.02&lE;x&lE;0.2, 0.6&lE;y&lE;0.8, 0.01&lE;z&lE;0.3, x&plus;y&plus;z&equals;1), and contains two types of glass powder, one comprising PbO, ZnO and B O and the other comprising SiO and B O , and a third component that comprises Al O , SrTiO , GeO and Li O. Its advantages are that it can be sintered at low temperatures, its dielectric constant &egr; falls between 10 and 50 or so, its unloaded Q is large, and its temperature-dependent resonant frequency change is small. The dielectric ceramic composition of the second aspect of the invention comprises an essential component having a compositional formula of s(xBaO-yTiO -zNd O )-tNd Ti O (wherein 0.02&lE;x&lE;0.2, 0.6&lE;y&lE;0.8, 0.01&lE;z&lE;0.3, x&plus;y&plus;z&equals;1, 0.1&lE;s&lE;0.8, 0.2&lE;t&lE;0.9, s&plus;t&equals;1), and contains two types of glass powder, one comprising PbO, ZnO and B O and the other comprising SiO and B O , and a third component that comprises Al O , SrTiO , GeO and Li O. Its advantages are that it can be sintered at low temperatures, its dielectric constant &egr; falls between 10 and 50 or so, its unloaded Q is large, and its absolute value of a temperature coefficient of resonant frequency &tgr; is small. Still another advantage of the composition is that its relative dielectric constant &egr; , its unloaded Q and its temperature coefficient of resonant frequency (&tgr; ) can be controlled in any desired manner by controlling the Nd Ti O content of the composition.

Dielectric ceramic composition

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Ube, Japan

Masataka Yamanaga