Sumitomo Electric Industries, Limited

Japan Tobacco Inc.

Masataka Watanabe

Naoya Kono

Takamitsu Kitamura

Hideki Yagi

Hajime Tanaka

Tsutomu Ishikawa

Taizo Tatsumi

Hirohiko Kobayashi

Naoki Itabashi

Takehiko Kikuchi

Takuo Hiratani

Daisuke Kimura

Norio Furuya

Satoru Kataoka

Yukinari Ohashi

An optical modulator includes a waveguide formed of a semiconductor and configured to allow light to propagate therethrough; a first electrode disposed on the waveguide and electrically connected to the waveguide; and a second electrode separated from the waveguide and electrically connected to the waveguide. An edge of the second electrode on a light entry side is located downstream of an edge of the first electrode on the light entry side in a propagation direction of the light.

Optical modulator

A semiconductor device includes: a semiconductor layer formed on a substrate; a first resin layer formed on the semiconductor layer; a second resin layer formed on the first resin layer; a first wiring layer that is formed on the semiconductor layer and is buried in the second resin layer; a second wiring layer that is formed on the second resin layer and the first wiring layer, and is electrically connected to the first wiring layer; and a first inorganic insulating film covering the second resin layer and the second wiring layer, wherein an area of the first wiring layer is larger than an area of the second wiring layer.

Semiconductor device and method of manufacturing the same

A spot size converter includes a first waveguide including a first core layer, the first waveguide propagating light; and a second waveguide including a second core layer and provided on the first waveguide, the second waveguide propagating light. The first waveguide and the second waveguide extend in a waveguide direction. A first region and a second region are provided continuously along the waveguide direction. In the first region, the second waveguide has a tapered shape in a cross section which becomes narrower as going up away from the first waveguide. An angle between a side surface of the second waveguide and a bottom surface of the second waveguide is 60&#xb0; or less.

Spot size converter and manufacturing method of the same

A Mach-Zehnder modulator includes: first and second resistive elements each having first and second contact areas, the first and second contact areas of the first resistive element being arranged in a direction of a first axis, the first and second contact areas of the second resistive element being arranged in a direction of a second axis; a common conductor connecting the first contact areas of the first and second resistive elements with each other; first and second waveguide structures each including a waveguide portion extending in a direction of a third axis intersecting the first and second axes; a first signal conductor connected to the waveguide portion of the first waveguide structure and the second contact area of the first resistive element; and a second signal conductor connected to the waveguide portion of the second waveguide structure and the second contact area of the second resistive element.

Mach-Zehnder modulator

A spot-size converter includes: a support body that includes a main surface including a first to a fifth areas; a mesa structure that includes a first part on the first area and includes a second part on the second to the fourth areas; and an embedding structure that includes a first region and a second region in which a first and a second side-surfaces of the second part of the mesa structure are respectively embedded. The second part of the mesa structure includes a portion that has a width gradually decreasing in a direction from the third area toward the fifth area. The first region of the embedding structure extends along the first side-surface and terminates at one of the third and the fourth areas. The second region of the embedding structure extends along the second side-surface of the second part and is disposed on the fifth area.

Asymmetrical spot-size converter and method of manufacturing spot-size converter

A semiconductor optical element is disclosed. The semiconductor optical element includes: a mesa-shaped optical waveguide formed on a substrate; a modulation electrode formed on the optical waveguide; a first resin layer that buries side surfaces of the optical waveguide; a bonding pad formed on the first resin layer; and a connecting wiring line that connects the modulation electrode and the bonding pad. In the semiconductor optical element, side surfaces of the bonding pad are partially covered with a second resin layer provided on the first resin layer, and the connecting wiring line extends on the second resin layer.

Semiconductor optical element and method for manufacturing the same

A method of producing a semiconductor device includes steps of: growing semiconductor layers to form a semiconductor stack on a semiconductor substrate; forming a first adhesive layer on the semiconductor stack; bonding a temporary support made of non-semiconductor material to the first adhesive layer; removing the semiconductor substrate from the semiconductor stack to expose a surface of the semiconductor stack; forming a second adhesive layer on the exposed surface of the semiconductor stack; bonding a support to the second adhesive layer; and removing the temporary support from the semiconductor stack. The support has a thermal conductivity greater than the thermal conductivities of the semiconductor layer in the semiconductor stack. In forming the first adhesive layer, this layer can cover the entire surface, or both the top and a side of the semiconductor stack. Before forming the first adhesive layer, a protective layer can be formed on the semiconductor stack.

Hetero-bipolar transistor and method for producing the same

A Mach-Zehnder modulator includes: a support having a principal surface, the principal surface having a first area, a second area, and a third area; a first structure including first and second semiconductor mesas disposed on the first and second areas, respectively; a second structure including a first strip-shaped semiconductor region on the second area, a second strip-shaped semiconductor region on the third area, and a first strip-shaped void and a second strip-shaped void defining the first and second strip-shaped semiconductor regions; a first electrode disposed on the first semiconductor mesa in the first area, the first strip-shaped semiconductor region of the second structure being disposed between the support and the second semiconductor mesa of the first structure in the second area, and the first and second semiconductor mesas, and the first and second strip-shaped semiconductor regions being arranged to constitute a first arm waveguide of the Mach-Zehnder modulator.

Mach-Zehnder modulator, method for fabricating Mach-Zehnder modulator

A Mach-Zehnder modulator comprises first to third semiconductor structures provided on first to third areas of a primary surface of a conductive semiconductor region, respectively. The second semiconductor structure includes a semiconductor laminate and a first contact portion thereon. The third semiconductor structure includes the semiconductor laminate and a second contact portion thereon. The first and second contact portions constitute a contact layer. The second semiconductor structure has first and second waveguide sides. The first contact portion has an edge which terminates the contact layer and extends in a direction of a first reference plane on the top of the semiconductor laminate to reach the first waveguide side. The first reference plane and a top of the second semiconductor structure intersect with each other to define a line of intersection obliquely-crossed with an upper edge of the first waveguide side at a first angle different from a right angle.

Mach-Zehnder modulator, method of making optical waveguide structure

A traveling-wave amplifier includes a plurality of amplifier cells, an insulating layer, an input line, and an output line. The plurality of amplifier cells is provided on a semiconductor substrate. Each of the amplifier cells receives an input signal and generates a part of an output signal from the input signal. The insulating layer is provided on the semiconductor substrate. The input line is used to externally receive an input signal and to transmit the input signal to the amplifier cells respectively. The output line is used to transmit the output signal generated by the amplifier cells and to externally output the output signal. The thickness of the input line is smaller than the thickness of the output line, and the input line and the output line are provided on the same insulating layer.

Traveling-wave amplifier

A semiconductor device and a process to form the same are disclosed. The semiconductor device includes a support, an active semiconductor stack including a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer, the first to third semiconductor layers being sequentially stacked on the support, and an electrode on the third semiconductor layer. The first semiconductor layer and the second semiconductor layer provide a buried region in a portion under the electrode, the buried region being filled with a material having a first dielectric constant smaller than a second dielectric constant of the first semiconductor layer and a third dielectric constant of the second semiconductor layer.

Semiconductor device having buried region beneath electrode and method to form the same

A semiconductor optical modulator includes a substrate having a principal surface; a waveguide disposed on the principal surface of the substrate, the waveguide extending in a first direction; a first electrode disposed on the waveguide, the first electrode being in contact with an upper surface of the waveguide; a first wiring connected to the first electrode, the first wiring extending in a second direction intersecting the first direction; a build-up portion connected to the first wiring; a second wiring connected to the build-up portion, the second wiring extending in a plane parallel to the principal surface of the substrate; and a resin layer disposed on the substrate, the resin layer embedding the first wiring and the build-up portion. The build-up portion extends along a third direction, the third direction intersecting perpendicularly to the principal surface of the substrate. The second wiring is disposed on the resin layer.

Growing community of inventors

Yokohama, Japan

Masataka Watanabe