Shin-etsu Handotai Co., Ltd.

Shin-etsu Chemical Co., Ltd.

Nec Corporation

Other

Masataka Watanabe

Tadakatsu Shimada

Hideo Hirasawa

Masayuki Shinohara

Jiro Moriya

Tsuneyuki Kaise

Satoshi Okazaki

Yuuji Tobisaka

Waichi Yamamura

Hiroshi Tsumura

Yoshiaki Shimizu

Kazuhisa Hatayama

Mitsukuni Sakashita

Minoru Taya

Shinji Suzuki

Hiroshi Machida

Takaaki Nagano

Hideo Kaneko

Kenichi Taguchi

Masahisa Endo

Masahisa Endou

Yukio Inazuki

Hideki Kobayashi

Ken Ohashi

You Ishii

Shunichiro Kojima

Tamotsu Maruyama

Shoichi Takamizawa

Yasuhiro Ikeda

Jun Ikeda

Yukari Suzuki

Shuichi Moriyama

Nobuhiro Ohara

Mikio Kojima

Tsuneyuki Kaise, Deceased

Eiichi Machida

Katsumi Ichimura

Nobuhiro Ohhara

Kunio Suzuki

Hidekazu Ozawa

Tohru Takahashi

The present invention provides a method for manufacturing a nitride semiconductor self-supporting substrate and a nitride semiconductor self-supporting substrate manufactured by this manufacturing method, the method including at least: a step of preparing a nitride semiconductor self-supporting substrate serving as a seed substrate; a step of epitaxially growing the same type of nitride semiconductor as the seed substrate on the seed substrate; and a step of slicing an epitaxially grown substrate subjected to the epitaxial growth into two pieces in parallel to an epitaxial growth surface. As a result, there is provided a method for manufacturing a large-diameter nitride semiconductor self-supporting substrate having an excellent crystal quality and small warp with good productivity at a low cost, etc.

Method for manufacturing nitride semiconductor self-supporting substrate and nitride semiconductor self-supporting substrate

A method for manufacturing a compound semiconductor substrate includes at least the processes of epitaxially growing a quaternary light emitting layer composed of AlGaInP on a GaAs substrate; vapor-phase growing a p-type GaP window layer on a first main surface of the quaternary light emitting layer, the first main surface being opposite to the GaAs substrate; removing the GaAs substrate; and epitaxially growing an n-type GaP window layer on a second main surface of the light emitting layer, the second main surface being located at a side where the GaAs substrate is removed. The method includes the process of performing a heat treatment under a hydrogen atmosphere containing ammonia after the process of removing the GaAs substrate and before the process of epitaxially growing the n-type GaP window layer.

Method for manufacturing compound semiconductor substrate, compound semiconductor substrate and light emitting device

A square substrate has a pair of opposed major surfaces and peripheral end faces therebetween, wherein a tapered edge portion is disposed between the peripheral end face and each major surface to define an inner boundary with the major surface, and has a width of 0.2&#x2013;1 mm from the peripheral end face. Both or either one of the major surfaces of the substrate has a flatness of up to 0.5 &#x3bc;m in an outside region of the substrate that extends between a position spaced 3 mm inward from the peripheral end face and the inner boundary of the tapered edge portion.

Angular substrates

An apparatus for manufacturing a glass base material, which is a base material of an optical fiber, comprising: a base rod, around and along which said glass base material is formed; a burner that hydrolyzes and accumulates a gas material, which is a base material of said glass base material, around and along said base rod; a first burner-moving-unit that moves said burner in a direction parallel with a longitudinal direction of said base rod; and a second burner-moving-unit that moves said first burner-moving-unit in a same moving direction of said first burner-moving-unit.

Glass base material manufacturing apparatus and glass base material manufacturing method

A method for manufacturing an optical fiber comprises setting a heating condition for heating a glass rod, which is a parent material of the optical fiber, and an elongating speed of the glass rod based on a prescribed numerical value which changes with a progress of elongation of the glass rod; heating and elongating the glass rod to generate a preform based on the heating condition and the elongating speed which are set by the setting; and drawing the preform to a filament-like form by further heating the preform to generate the optical fiber.

Optical fiber manufacture method, preform manufacture method, and preform manufacture apparatus

An angular substrate polishing method includes the steps of holding an angular substrate having a surface to be polished within a guide ring of a substrate holding head; pressing the substrate surface to be polished, and also one surface of the guide ring, against a polishing pad; and independently rotating the polishing pad and the substrate-holding head together with the substrate it holds while pressing the polishing pad-contacting surface of the guide ring against the polishing pad, to thereby polish the substrate surface. During the polishing step, a pressing force is applied to the guide ring which is separate from the pressing force applied to the substrate, enhancing the flatness of the polished substrate.

Method for polishing angular substrates

Method of making an optical fiber preform where a second elongation is based on a mark on a glass rod

OVD apparatus including air-regulating structure

The present invention provides a magnetron sputtering system, which ensures a formation of a desired thin film, using a thick target. In the sputtering process, a portion of the target does not have erosion free portions. The present invention provides a magnetron sputtering system comprising a chamber for sputtering, a target electrode installed inside said chamber, a substrate electrode installed in the chamber opposite to the target electrode, a ring-shaped magnet installed so as to enclose the side surface of the target electrode, and a semi-circular disk shaped magnet installed opposite to the target-mounted surface of the target electrode, wherein the semi-circular disk shaped magnet is rotated in the circumferential direction of the target electrode and is magnetized in the direction perpendicular to the target electrode. This ensures a specific magnetic field component to be generated over the thick planar target surface

Magnetron sputtering system and photomask blank production method based on the same

A phase shift mask blank includes a transparent substrate and a phase shift film composed primarily of a metal and silicon. The substrate has an etch rate A and the phase shift film has an etch rate B when the blank is patterned by reactive ion etching, such that the etch selectivity B/A is at least 5.0. When a phase shift mask is manufactured from the blank, the substrate is less prone to overetching, providing good controllability and in-plane uniformity of the phase shift in patterned areas. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.

Phase shift mask blank, phase shift mask, and methods of manufacture

Glass base material manufacturing apparatus with super imposed back-and-forth burner movement

A PWM (Pulse Width Modulation) circuit of the present invention includes a reference pulse sequence generating section for outputting a reference pulse sequence, an up-down counter, a trigger signal generating section for generating from an input signal a trigger signal for the up-down counter having a period which is a natural number multiple of one cycle the period of PWM, and a comparator for comparing the output of the up-down counter and the reference pulse sequence.

PWM Circuit

In a current shared memory cycle, the memory access band value of each bus master is calculated at any time and discriminated to determine the next memory cycle control before completion of the current shared memory cycle, so that the minimum memory access band value required by each bus master is maintained with the result that the shared memory can be efficiently utilized. Thus, there is provided a shared memory control apparatus and a shared memory control method, capable of realizing a memory control of an excellent efficiency by maintaining the memory access band width per unit time, required by the master.

Shared memory control system and shared memory control method

A semiconductor integrated circuit comprises an internal logic circuit , a delay detecting circuit which monitors changes in delay length within the semiconductor integrated circuit , and a central control circuit which controls the quantity of processing per unit time length by the internal logic circuit on the basis of changes in delay length monitored by the delay detecting circuit

Semiconductor integrated circuit equipped with function for controlling the quantity of processing per unit time length by detecting internally arising delay

Optical fiber manufacture method including elongating a preform in a vertical direction and a horizontal direction

Growing community of inventors

Annaka, Japan

Masataka Watanabe