Tokyo Electron Limited

Masataka Toiya

Hisashi Inoue

Yoshikatsu Mizuno

Jun Sato

Tetsuya Shibata

Eiji Kikama

A film formation method includes a film formation process for forming an SiOfilm on a surface of a target object inside a process container by use of an Si source gas and an oxidizing agent, and an oxidation purge process for performing oxidation on films deposited inside the process container while exhausting gas from inside the process container after unloading the target object from the process container, wherein the film formation process and the oxidation purge process are alternately repeated a plurality of times without, interposed therebetween, a process for removing the films deposited inside the process container.

Film formation method, film formation apparatus, and method for using film formation apparatus

An oxidation method for performing direct oxidation includes respectively supplying an oxidizing gas and a deoxidizing gas to the process field, and directly oxidizing a surface target substrates by use of oxygen radicals and hydroxyl group radicals generated by a reaction between the oxidizing gas and the deoxidizing gas. The oxidizing gas is supplied through an oxidizing gas nozzle extending over a vertical length corresponding to the process field and is spouted from a plurality of gas spouting holes formed on the oxidizing gas nozzle and arrayed over the vertical length corresponding to the process field. The deoxidizing gas is supplied through a plurality of deoxidizing gas nozzles having different heights respectively corresponding to a plurality of zones of the process field arrayed vertically and is spouted from gas spouting holes respectively formed on the deoxidizing gas nozzles each at height of a corresponding zone.

Direct oxidation method for semiconductor process

Process tube for manufacturing semiconductor wafers

Growing community of inventors

Oshu, Japan

Masataka Toiya