Tokyo Shibaura Denki Kabushiki Kaisha

Masataka Tanaka

Hiroshi Matsumoto

Nobuo Iwase

Kenji Nagashima

Hirosi Oodaira

A method for manufacturing a hybrid integrated circuit device comprising a step of forming an Al.sub.2 O.sub.3 layer on a metal substrate, a step of forming on the Al.sub.2 O.sub.3 layer a resist layer having a pattern opposite to that of a copper layer which will be formed on the Al.sub.2 O.sub.3 layer by a later step, a step of forming the copper layer on the Al.sub.2 O.sub.3 layer using the resist layer as a mask, a step of impregnating thermosetting material into both the Al.sub.2 O.sub.3 layer and the copper layer, and a step of providing at least one semiconductor element on the copper layer.

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Kitakyushu, Japan

Masataka Tanaka