Mitsubishi Denki Kabushiki Kaisha

Masataka Takehara

Masaharu Yoshida

Tetsuya Ueda

Kazunari Michii

Toru Tachikawa

Haruo Shimamoto

Manabu Horita

Yasufumi Nakasu

In order to position an optical semiconductor element in high accuracy and to readily fabricate the same, step is formed on an upper surface of a forward end of an electrode (123) projecting from a lead frame. A submount (102) is previously soldered to a lower stage surface (125), while solder (172) is applied to its upper surface. A collet (61) which is softly supported by a spring (63) in the vertical direction suctionally holds a laser diode element (101) and approaches the electrode (123) from above, to be stopped when its leg portion (61b) comes into contact with an upper stage surface (126). Thus, the laser diode element (101) is precisely positioned. In this state, the solder (172) is heated and cooled, to solder the laser diode element (101) to the submount (102). The laser diode element (101) molded with transparent resin, to be easy to fabricate.

Optical semiconductor device for optical communications with increased

An apparatus for bonding lead terminals to bumps of a semiconductor chip by using a laser beam. On the basis of a temperature signal obtained from irradiation of a lead terminal and a bump to be bonded together under irradiation of the laser beam, state of contact and the bond between the bump and the lead terminal are decided. The bonding between the terminals and the bumps can be realized without fail by checking the state of contact therebetween in precedence to the bonding operation.

Bonding method and apparatus

A bonding apparatus according to the present invention bonds a semiconductor chip to a conductive member in the face-down style without heating the semiconductor chip. The semiconductor chip which consists essentially of silicon is placed on leads which are put on a TAB tape. A glass plate member is mounted on the semiconductor chip. An infrared light beam is irradiated onto the semiconductor chip from above the semiconductor chip. Transmitted by the semiconductor chip, the infrared light beam illuminates bumps. As a result, the bumps heat up and melt. Since the semiconductor chip does not absorb the infrared light beam, bonding of the semiconductor chip to the leads does not cause a rise in temperature of the semiconductor chip. The bonding apparatus according to the present invention makes the face-down style bonding possible.

Bonding method and bonding apparatus

A semiconductor device includes an insulating substrate; a semiconductor chip on which plural electrodes including at least one ground electrode and at least one power source electrode are disposed; plural leads supported by an obverse surface of the insulating substrate, the plural leads being connected to corresponding electrodes on the semiconductor chip; at least one grounding conductor plate on a reverse surface of the insulating substrate; and at least one power source conductor plate on the reverse surface of the insulating substrate. This semiconductor device includes grounding contact holes for electrically connecting the grounding conductor plate to a ground lead coupled to the ground electrode on the semiconductor chip; power source contact holes for electrically connecting the power source conductor plate to a power source lead coupled to the power source electrode on the semiconductor chip; and a package body encapsulating the semiconductor chip and an end of each of the leads so that the other end of each of the leads is exposed outside the package body.

Semiconductor device

The semiconductor device has leads projecting from at least two sides of all of a package which are bent in a zigzag manner so that ends of the leads lie on at least two planes. The semiconductor device may be mounted across a plurality of printed circuit boards by fixing a part of the leads from one side to a first board and fixing a remaining part of the leads from the other side to a second board, or by fixing a part of the leads on one plane to a first board and fixing a remaining part of the leads on the other plane to a second board.

Semiconductor device package having particular lead structure for

A semiconductor device having a heat radiating member and a laminated structure for improvements in electrical and heat radiating characteristics. The heat radiating member is partially exposed outside a resin package of the semiconductor device to radiate heat generated by a semiconductor element to the outside of the device. In the laminated structure, a capacitor having a small capacity is formed by two electrically conductive plates one of which is connected to power supply leads and the other of which is connected to a grounded portion of the semiconductor element and to a grounding lead.

A modular semiconductor device includes a pair of generally parallel electronic circuit boards and a plurality of IC packages mounted between the electronic circuit boards. Two or more modular semiconductor devices may be stacked on each other so that memory capacity can be readily enlarged and the function level can be readily improved. A heating, radiating fin of planar or honeycomb structure may be provided in near contact with an IC package.

Growing community of inventors

Itami, Japan

Masataka Takehara