Kabushiki Kaisha Toshiba

Nuflare Technology, Inc.

Nec Corporation

Toshiba Tec Kabushiki Kaisha

Toshiba Memory Corporation

Toshiba Lighting & Technology Corporation

Toshiba Materials Co., Ltd.

Masataka Shiratsuchi

Yoshinori Honguh

Hiroshi Ohno

Riki Ogawa

Takeshi Morino

Ryoichi Hirano

Mitsuaki Kato

Hideaki Hashimoto

Hiromichi Hayashihara

Hideo Tsuchiya

Katsumi Hisano

Masatoshi Hirono

Chosaku Noda

Hiromu Inoue

Tomonao Takamatsu

Yuichiro Yamamoto

Osamu Fujii

Shinichi Tatsuta

Hideaki Okano

Tomoyuki Suzuki

Munehiro Ogasawara

Hideo Tamura

Kiyotaka Miyano

Nozomu Harada

Tomonori Aoyama

Masahiko Yamamoto

Kazuhiko Inoue

Takayoshi Moriyama

Shinji Sugihara

Yuji Kubota

Seiji Ikari

Kenzo Isogawa

Yuzo Hisatake

Hiroya Kano

Tutomu Saito

Yoshiharu Momonoi

Masahiro Toda

Kazuhiro Nakashima

Kazuyasu Ohwaki

Yoshinori Higuchi

Kei Shimura

Makoto Yamazaki

Yumi Hanyuda

Hiroshi Fukuta

Juan Felipe Torres

Junya Murata

Naoto Tokuhara

Tadayuki Sugimori

A pattern inspection apparatus includes a secondary electron image acquisition mechanism to include a deflector deflecting multiple primary electron beams and a detector detecting multiple secondary electron beams, and acquire a secondary electron image corresponding to each of the multiple primary electron beams by scanning a target object with a pattern thereon with the multiple primary electron beams by the deflector, and detecting the multiple secondary electron beams from the target object by the detector, a storage device to store individual correction kernels each generated for individually adjusting a secondary electron image corresponding to each primary electron beam concerning a reference pattern to be commensurate with a reference blurred image, and a correction circuit to correct, by correspondingly using the individual correction kernel, the secondary electron image corresponding to each primary electron beam acquired from the inspection target object.

Pattern inspection apparatus and pattern inspection method

A multi-charged particle beam irradiation apparatus includes a forming mechanism to form multiple charged particle beams, a multipole deflector array to individually deflect each beam of the multiple charged particle beams so that a center axis trajectory of each beam of the multiple charged particle beams may not converge in a region of the same plane orthogonal to the direction of a central axis of a trajectory of the multiple charged particle beams, and an electron optical system to irradiate a substrate with the multiple charged particle beams while maintaining a state where the multiple charged particle beams are not converged.

Multi-charged particle beam irradiation apparatus and multi-charged particle beam inspection apparatus

Provided is an inspection apparatus including: an irradiation source irradiating a first pattern formed on an inspection target object with an electron beam; a detection circuit acquiring a first inspection image generated from the first pattern by irradiation; a filter circuit performing smoothing using a local region having a first size in a direction parallel to a first outline included in the first inspection image and a second size smaller than the first size in a direction perpendicular to the first outline and acquiring a second inspection image including a second outline generated by the smoothing; and a comparison circuit comparing the second inspection image with a predetermined reference image.

Inspection apparatus and inspection method

A multiple electron beam inspection apparatus includes a correction circuit that corrects a partial secondary electron image of partial secondary electron images configuring a secondary electron image and obtained by irradiation with a corresponding primary electron beam of the multiple primary electron beams such that the partial secondary electron image becomes close to a uniform beam partial image when an irradiation region of a primary electron beam corresponding to the partial secondary electron image is irradiated with a uniform beam obtained by equalizing shapes and sizes of all primary electron beams, by using a function for individual correction of each primary electron beam, for each of the plural partial secondary electron images, and an inspection circuit that performs inspection using plural partial secondary electron images each corrected.

Multiple electron beam inspection apparatus and multiple electron beam inspection method

There is provided an inspection method including acquiring an inspection image by irradiating a sample with a plurality of electron beams and by simultaneously scanning the sample by the electron beams, performing first correction of a reference image corresponding to the inspection image or second correction of the inspection image based on a plurality of distortions of each of the electron beams and on a position scanned by each of the electron beams in the inspection image, and performing first comparison of the reference image subjected to the first correction with the inspection image or second comparison of the reference image with the inspection image subjected to the second correction.

Inspection method and inspection apparatus

According to one embodiment, an inspection device includes: an image generation device configured to generate a second image corresponding to a first image; and a defect detection device configured to estimate a nonlinear shift based on a plurality of partial region sets, each of the partial region sets including a first partial region in the first image and a second partial region in the second image corresponding to the first partial region, and detect a defect in the second image from the first image.

Inspection device, inspection method, and storage medium

According to one aspect of the present invention, a multiple electron beam inspection apparatus includes a reference image generation circuit generating reference images corresponding to the secondary electron images, in accordance with an image generation characteristic of a secondary electron image by irradiation of one beam; and a correction circuit generating corrected reference images in which, on the basis of deviation information between a figure pattern of the secondary electron image by irradiation of the one beam of the multiple primary electron beams and a figure pattern of a secondary electron image by irradiation of another beam different from the one beam of the multiple primary electron beams, a shape of a figure pattern of a reference image corresponding to the figure pattern of the secondary electron image by the irradiation of the another beam in the reference images is corrected.

Provided is a pattern inspection method including: irradiating a substrate with an electron beam, a pattern being formed on the substrate; acquiring an inspection image as a secondary electron image of the pattern; setting a pixel value equal to or less than a first threshold value minus a half of a predetermined detection width of the inspection image and a pixel value equal to or more than the first threshold value plus a half of the predetermined detection width of the inspection image to unprocessed; acquiring a difference image between the inspection image having the pixel value having less than the first threshold value minus the half of the predetermined detection width and the pixel value having more of the first threshold value plus the half of the predetermined detection width being set to unprocessed and a reference image of the inspection image; and performing inspection on the basis of the difference image.

Pattern inspection method and pattern inspection apparatus

According to one aspect of the present invention, a pattern inspection apparatus includes: a first sub-pixel interpolation processing circuitry configured to calculate a pixel value of a reference image corresponding to a position of each pixel of the inspection target image by performing an interpolation process using at least one pixel value of the reference image for each shift amount while variably and relatively shifting the inspection target image and the reference image by the unit of a sub-pixel using the reference image corresponding to the inspection target image; and an SSD calculation processing circuitry configured to calculate a sum of squared difference between each pixel value of the inspection target image and a corresponding pixel value of the reference image subjected to a filter process for the each shift amount.

An electron beam inspection apparatus includes an acquisition processing circuitry to acquire surface material information presenting a surface material of the substrate and a value of an acceleration voltage of an electron beam; a sequence determination processing circuitry to determine a scan sequence of a plurality of stripe regions on the basis of the surface material of the substrate and the value of the acceleration voltage, the plurality of stripe regions obtained by virtually dividing an inspection region of the substrate in a stripe shape; a secondary electron image acquisition mechanism including a detector for detecting a secondary electron and configured to scan the plurality of stripe regions of the substrate according to a determined scan sequence and to acquire a secondary electron image of the substrate; and a comparison processing circuitry to compare the secondary electron image with a corresponding reference image.

Electron beam inspection apparatus and electron beam inspection method

According to one aspect of the present invention, a pattern inspection apparatus includes reference outline creation processing circuitry configured to create a reference outline of a reference figure pattern, which serves as a reference, by using pattern data of a design pattern that serves as a base of a figure pattern formed on a substrate; outline extraction processing circuitry configured to extract an outline of the figure pattern in the measurement image from the measurement image using, as starting points, a plurality of points that are positioned on the reference outline; and comparison processing circuitry configured to compare the reference outline with the outline of the figure pattern.

An electron beam inspection apparatus according to an embodiment includes a stage holding a substrate with a pattern; an electron beam column irradiating the substrate with multiple beams including a plurality of electron beams such that adjacent regions irradiated with the electron beams have an overlap portion therebetween; a first image storage unit storing a first inspection image acquired by irradiating a first inspection region of the substrate with the multiple beams; a second image storage unit storing a second inspection image acquired by irradiating a second inspection region of the substrate with the multiple beams; a correction coefficient storage unit storing a correction coefficient for correcting an image of the overlap portion; an image correction unit correcting an image of the overlap portion using the correction coefficient; and a comparison unit comparing the first inspection image with the second inspection image.

An apparatus according to an embodiment comprises: a laser source that outputs a laser beam; an optical system that modifies the laser beam, and directs the modified laser beam onto a test object; a signal detector that detects a change of signal in the process of irradiating the test object with the modified laser beam; and a computer system that performs a failure analysis based on the change detected by the signal detector, wherein the optical system modifies the laser beam so that the modified laser beam generates an irradiation zone that includes a first intensity component of which peak intensity is near an irradiation axis and a second intensity component of which peak intensity is around the irradiation axis.

Thermal laser stimulation apparatus, method of thermally stimulating, and non-transitory computer readable medium

In one embodiment, an illumination device includes a light-guiding unit having a light output surface which outputs light and a back surface facing the light output surface, wherein the light-guiding unit has a curved surface in a region of the back surface farther than a first position on the back surface that is away by a first distance from an axis passing the light output surface and the back surface, and a rough surface in a region of the light output surface farther than a second position on the light output surface that is away by a second distance from the axis in a same direction as a direction from the axis toward the first position, and where an intersection of the axis and the back surface is an origin point, and a direction of the axis from the back surface to the light output surface is positive, a normal line of the curved surface intersects with the axis at the positive side of the axis, and an angle formed by a normal line vector at the second position in a direction toward the light output surface from the back surface of the light output surface and a vector in a direction from the curved surface to the second position is equal to or more than a critical angle.

Illumination device and light-guiding member

A charged particle beam inspection apparatus includes a first deflector to deflect N&#xd7;N' multiple beams collectively to N&#xd7;N&#x2032; small regions having a size p/M in the first direction and arrayed at the pitch p in the first direction, perform tracking deflection, and re-deflect the multiple beams collectively to next N&#xd7;N&#x2032; small regions away from the N&#xd7;N&#x2032; small regions by N small regions in the first direction, by the stage completes a movement of a distance of N/M&#xd7;p so as to reset the tracking deflection; and a second deflector to deflect the multiple beams collectively to scan the N&#xd7;N&#x2032; small regions concerned while the tracking deflection is performed.

Charged particle beam inspection apparatus and charged particle beam inspection method

Growing community of inventors

Kawasaki, Japan

Masataka Shiratsuchi