Semiconductor Energy Laboratory Co., Ltd.

Masataka Sato

Seiji Yasumoto

Hiroki Adachi

Shunpei Yamazaki

Satoru Idojiri

Shingo Eguchi

Natsuko Takase

Kayo Kumakura

Junpei Yanaka

Kunihiko Suzuki

Tomoya Aoyama

Masakatsu Ohno

Yoshiharu Hirakata

Junya Maruyama

Koji Kusunoki

Kensuke Yoshizumi

Susumu Kawashima

Daiki Nakamura

Masataka Nakada

Nozomu Sugisawa

Masahiro Katayama

Kazuhiko Fujita

Toshiyuki Miyamoto

Masafumi Nomura

Mari Tateishi

Toru Takayama

Ryu Komatsu

Naoki Ikezawa

A glass substrate is reused. The mass productivity of a semiconductor device is increased. A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second material includes one or both of a resin and a decomposition product of a resin. A cleaning method of a glass substrate, which includes a step of preparing the glass substrate one surface of which includes a first material and a second material and a step of exposing the first material by removing at least part of the second material.

Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate

A light-emitting device capable of long-time display in a bent state is provided. A light-emitting device that can be repeatedly bent with a small radius of curvature is provided. The flexible light-emitting device includes a light-emitting element, a first inorganic insulating layer, a second inorganic insulating layer, and a first organic insulating layer. The first organic insulating layer is positioned over the first inorganic insulating layer. The light-emitting element is positioned over the first inorganic insulating layer with the first organic insulating layer therebetween. The second inorganic insulating layer is positioned over the light-emitting element. An end portion of the first inorganic insulating layer and an end portion of the second inorganic insulating layer are each positioned inward from an end portion of the first organic insulating layer. The end portion of the first organic insulating layer is exposed on a side surface of the light-emitting device. The first inorganic insulating layer and the second inorganic insulating layer are preferably in contact with each other outside an end portion of the light-emitting element.

Light-emitting device, light-emitting module, electronic device, and manufacturing method of light-emitting device

Display unevenness in a display panel is suppressed. A display panel with a high aperture ratio of a pixel is provided. The display panel includes a first pixel electrode, a second pixel electrode, a third pixel electrode, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, a first common layer, a second common layer, a common electrode, and an auxiliary wiring. The first common layer is positioned over the first pixel electrode and the second pixel electrode. The first common layer has a portion overlapping with the first light-emitting layer and a portion overlapping with the second light-emitting layer. The second common layer is positioned over the third pixel electrode. The second common layer has a portion overlapping with the third light-emitting layer. The common electrode has a portion overlapping with the first pixel electrode with the first common layer and the first light-emitting layer provided therebetween, a portion overlapping with the second pixel electrode with the first common layer and the second light-emitting layer provided therebetween, a portion overlapping with the third pixel electrode with the second common layer and the third light-emitting layer provided therebetween, and a portion in contact with a top surface of the auxiliary wiring.

Display panel, display device, display module, and electronic device

Display panel, and display device, display module, and electronic device including display panel

A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

Peeling method and manufacturing method of flexible device

To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.

Peeling method, semiconductor device, and peeling apparatus

A method of fabricating a semiconductor device, which includes a separation step and has a high yield, is provided. A metal layer is formed over a substrate, fluorine is supplied to the metal layer, and the metal layer is then oxidized, whereby a metal compound layer is formed. A functional layer is formed over the metal compound layer, heat treatment is performed on the metal compound layer, and the functional layer is separated from the substrate with use of the metal compound layer. By performing first plasma treatment using a gas containing fluorine, fluorine can be supplied to the metal layer. By performing second plasma treatment using a gas containing oxygen, the metal layer supplied with fluorine can be oxidized.

Fabrication method of semiconductor device

A novel electrical module that is highly convenient or reliable is provided. A novel display panel that is highly convenient or reliable is provided. A novel display device that is highly convenient or reliable is provided. The functional layer includes an element, a conductive film, and an intermediate layer and the element is electrically connected to the conductive film. The intermediate layer includes an opening portion and a first surface, the opening portion overlaps with the conductive film, the opening portion includes a side end portion, and the side end portion is in contact with the conductive film. Moreover, the first surface includes a first region, the first region is positioned at the periphery of the opening portion, and the first region is in contact with the conductive film.

Electrical module, display panel, display device, input/output device, data processing device, and method of manufacturing electrical module

The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of a semiconductor device is increased. A semiconductor device is manufactured by forming a first material layer over a substrate; forming a second material layer over the first material layer; and separating the first material layer and the second material layer from each other; and heating the first material layer and the second material layer that are stacked before the separation. The first material layer includes a gas containing hydrogen, oxygen, or hydrogen and oxygen (e.g., water) in a metal oxide, for example. The second material layer includes a resin. The first material layer and the second material layer are separated from each other by a break of a hydrogen bond. Specifically water is separated out at the interface or near the interface, and then adhesion is reduced due to the water present.

Manufacturing method of semiconductor device

A first display element includes a first pixel electrode that reflects visible light, a liquid crystal layer, and a first common electrode that transmits visible light. A second display element includes a second pixel electrode that transmits visible light, a light-emitting layer, and a second common electrode that reflects visible light. A separation layer that reflects visible light is formed over a formation substrate, an insulating layer is formed over the separation layer, and the second display element is formed over the insulating layer. The formation substrate and a second substrate are bonded to each other. Then, the formation substrate and the separation layer are separated from each other. The exposed separation layer is processed into the first pixel electrode. The liquid crystal layer is positioned between the first common electrode and the first pixel electrode and a first substrate and the second substrate are bonded to each other.

Display device including two display elements, display module, electronic device, and method for manufacturing display device

To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

Peeling method, display device, module, and electronic device

A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming a functional layer over the separation layer; performing heat treatment to promote the release of hydrogen and nitrogen from the layer; and separating the substrate at the separation layer. The method allows the formation of an extremely thin oxide layer over the separation layer, which facilitates the separation, reduces the probability that the oxide layer remains under the layer, and contributes to the increase in efficiency of a device included in the functional layer.

Growing community of inventors

Tochigi, Japan

Masataka Sato