Oki Data Corporation

Masataka Muto

Mitsuhiko Ogihara

Takahito Suzuki

Tomoki Igari

Hiroyuki Fujiwara

Tomohiko Sagimori

Hiroshi Kurokawa

A method for manufacturing a semiconductor device, includes: a step of etching a Si () substrate along a () plane of the Si () substrate to separate a Si () thin-film device having a separated surface along the () plane.

Semiconductor device

A method for manufacturing a semiconductor device, includes: a step of etching a Si (111) substrate along a (111) plane of the Si (111) substrate to separate a Si (111) thin-film device having a separated surface along the (111) plane.

Method of manufacturing semiconductor device, semiconductor device and semiconductor composite device

A semiconductor composite apparatus, includes a first substrate, a semiconductor thin film layer, active devices, first driving circuits, and second driving circuits. The semiconductor thin film layer is formed on the first substrate and is formed of a first semiconductor material. The active devices are formed in the semiconductor thin film layer. The first driving circuits is formed of a second semiconductor material and performing a first function in which the active devices are driven. The second driving circuits are formed of a third semiconductor material and performing a second function in which the active devices are driven, the second function being different from the first function.

Semiconductor composite apparatus, print head, and image forming apparatus

A semiconductor composite apparatus includes a substrate and a planarizing layer, and a semiconductor thin film. The planarizing layer is formed on the substrate either directly or indirectly. The planarizing layer includes a first surface that faces the substrate, and a second surface that is on the side of the planarizing layer remote from the substrate. The semiconductor thin film formed on the planarizing layer. The second surface has a roughness of not more than 5 nm.

Semiconductor composite apparatus, LED, LED printhead, and image forming apparatus

A semiconductor device includes a substrate; a first conductive type semiconductor layer disposed on a main surface of the substrate; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; a plurality of light emitting elements; and a second conductive side wiring pattern for commonly connecting the second conductive type semiconductor layer in the light emitting elements arranged adjacently. The second conductive type semiconductor layer includes a first conductive type semiconductor connection surface and a second conductive type semiconductor connection surface between the first conductive type semiconductor layer.

Semiconductor device, light emitting diode head, and image forming apparatus

A semiconductor device includes a light-emitting layer of a first conductivity type, a second conductivity type or non-doped type, a first contact layer of the second conductivity type disposed on the light-emitting layer and supplied with a voltage via a predetermined contact, a second contact layer of the second conductivity type disposed below the light-emitting layer and supplied with a voltage via a predetermined contact, a first etching stopper layer of the first or second conductivity type disposed below the light-emitting layer and above the second contact layer, and a third contact layer of the first conductivity type disposed below the second contact layer and supplied with a voltage via a predetermined contact.

Composite semiconductor device having a thyristor structure

A composite semiconductor device includes a substrate; a plurality of circuits formed on the substrate; one or more wiring layers each including a plurality of wiring patterns connected to circuits of the plurality of circuits, a plurality of dummy patterns electrically isolated from the plurality of circuits, and an interlayer dielectric film that is spin-coated directly onto the wiring patterns and onto the dummy patterns, and that is a spin-coated layer, the dummy patterns being formed in areas where the wiring patterns are absent and lying substantially in a plane in which the wiring patterns lie; and a semiconductor thin film layer including semiconductor device elements and disposed on an upper most surface of the one or more wiring layers. The spin-coated layer may be formed of an organic material or an oxide material.

Composite semiconductor device

An inclined surface having an inclination angle &#x3b8; is formed in an edge portion which forms an opening portion of an inter-layer insulating film, thereby reducing a stress by the inclined surface.

Semiconductor light emitting device with stress absorber, LED printhead, and image forming apparatus

A semiconductor device includes a plurality of light emitting elements formed of a thin layer of a compound semiconductor and arranged in a row in one direction with an equal interval therebetween. Each of the light emitting elements includes a light emitting area formed on a surface thereof; a first conductive type side electrode formed on the surface and electrically connected to one side of the light emitting element; and a second conductive type side electrode formed on the surface and electrically connected to the other side of the light emitting element. Further, the first conductive type side electrode is disposed at a position continuously surrounding at lease two sides of the light emitting area of the light emitting area with an insulating film inbetween. The second conductive type side electrode is disposed on the light emitting area.

Semiconductor device, light emitting diode print head, and image forming apparatus

A semiconductor device includes a substrate, conductive layer, semiconductor thin films, and individual electrodes. The conductive layer is formed on the substrate and serves as a common electrode. The thin films are bonded on the conductive layer. Each of the plurality of semiconductor thin films includes at least one active region and a contact layer that is in electrical contact with the conductive layer. Each of the individual electrodes is formed on a surface of a corresponding one of the semiconductor thin films in electrical contact with the active region. The thin film may be a single thin film that includes a plurality of active regions formed therein, in which case a different common electrode may be used instead of the common electrode which is in contact with the surface and is electrically isolated from the individual electrodes.

Growing community of inventors

Tokyo, Japan

Masataka Muto