Sharp Kabushiki Kaisha Corporation

Other

Au Optronics Corporation

Research Triangle Institute

Masataka Itoh

Shuhei Tsuchimoto

Shohichi Katoh

Atsushi Yoshinouchi

Satoshi Nishigaki

Shunpei Yamazaki

Jun Koyama

Hisashi Ohtani

Hiroyuki Ogawa

Hidehito Kitakado

Tatsuo Morita

Katsushi Okibayashi

Hiroshi Wada

Chien-Sen Weng

Masaya Nagata

Robert J Markunas

Robert C Hendry

Takashi Nukii

Keiji Tarui

Soji Ohhara

Gill Fountian

A touch panel includes a TFT array having a plurality of thin film transistors; a plurality of signal lines disposed within the TFT array, each of the signal lines being electrically connected to a respective one of the transistors; a transparent conductive pattern layer disposed above the plurality of signal lines and electrically connected to each of the transistors; a flexible conductive layer; and a spacing pattern layer supporting flexible conductive layer to space the flexible conductive layer apart from the transparent conductive pattern layer. When pressure is applied onto the flexible conductive layer, the flexible conductive layer contacts the transparent conductive pattern layer to transmit an electrical signal via the signal lines into the TFTs to indicate the point of contact.

Touch panel for mounting on a display panel

The present invention has provided on a back channel side of the TFT a blocking layer that is formed by laminating a 50 nm to 100 nm thick silicon oxynitride film (A) and a 30 nm to 70 nm thick silicon oxynitride film (B). By forming a lamination structure of such silicon oxynitride films, not only can be the contaminations caused by impurities such as alkali metallic elements from the substrate prevented, but the fluctuations in the electrical characteristics of the TFT can be reduced.

Semiconductor device

Semiconductor device and method of manufacturing the same

A semiconductor device using a TFT including a multilayered gate electrode and an LDD region partially overlapping with the multilayered gate electrode via a gate insulating film is provided.

Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith

A line plasma source (20) comprises a plasma chamber (30) configured so that plasma (32) is situated remotely and on-edge with respect to a polycrystalline silicon surface (20S) to be treated, thereby preventing damage to the surface, facilitating treatment of large substrates, and permitting low temperature operation. Active species exit the plasma chamber through a long narrow ('line') outlet aperture (36) in the plasma chamber to a reaction zone (W) whereat the active species react with a reaction gas on the polycrystalline silicon surface (e.g., to form a deposited thin film). The polycrystalline silicon surface is heated to a low temperature below 6000.degree. C. Hydrogen is removed from the reactive surface in the low temperature line plasma source by a chemical displacement reaction facilitated by choice of dominant active species (singlet delta state of molecular oxygen). Reaction by-products including hydrogen are removed by an exhaust system (100) comprising long narrow exhaust inlet apertures (114L,114R) extending adjacent and parallel to the outlet aperture of the plasma chamber. An ionizing electric field is coupled to the plasma across a smallest dimension of the plasma, resulting in uniform production of active species and accordingly uniform quality of the thin film. The polycrystalline silicon surface to be treated is translated with respect to the plasma line source in a direction perpendicular to the outlet aperture of the plasma line source for integrating thin film quality in the direction of translation (22).

Line plasma vapor phase deposition apparatus and method

A device and a method for inputting/outputting an image are disclosed. The device includes: an image display section which selectively transmits light; and an image input section having a photodetective portion for converting part of the light which has been transmitted through the image display section and reflected from an original surface to be imaged, into an electric signal. The method is performed by using the device.

Apparatus and a method for inputting/outputting an image

A contact type image sensor comprising a light-detecting element array formed on a substrate, a light source for irradiating an original to be read, and an optical fiber array disposed between said light-detecting element array and said original to be read, said optical fiber array being formed by laminating an optical fiber array member that is composed of optical fibers not coated with an absorber on an optical fiber array member that is composed of optical fibers coated with an absorber, said optical fibers being disposed between said light-detecting element array and said original to be read, and said light source being disposed at the light emission side of said optical fiber array, thereby attaining a precise irradiation of an original with light from a light source and reliably shuts off the leakage to maintain excellent resolution characteristics of the sensor.

Contact type image sensor with a fiber array coated in part with an

A contact-type image sensor comprising a light source that illuminates the manuscript to be read; photodetectors that convert the light reflected by the manuscript into an electrical signal; a substrate that is disposed between the photodetectors and the manuscript; an optical fiber array that is constituted by a bundle of optical fibers that are buried in the substrate, the optical fiber array introducing the reflected light from the manuscript into the light-receiving surfaces of the photodetectors; and a light-absorbing substance that is disposed on the outer surface of each of the optical fibers, wherein the light-absorbing substance is disposed on the outer surface of each of the optical fibers, except for the region with a given length from the end of the optical fiber array that faces the manuscript.

Contact-type image sensor

A contact-type image sensor comprising a light source that illuminates the manuscript to be read; photodetectors that convert the light reflected by the manuscript into an electrical signal; a substrate that is disposed between the photodetectors and the manuscript, a bundle of optical fibers being buried in the substrate; and wiring electrodes that are disposed on the top surface of the substrate corresponding to the light-emitting face of the bundle of optical fibers and that are disposed on the light-receiving surfaces of the photodetectors, wherein the photodetectors are disposed in such a manner that the light-receiving surfaces of the photodetectors face the light-emitting face of the bundle of optical fibers, the wiring electrodes disposed on the photodetectors being electrically bonded to the wiring electrodes disposed on the substrate.

A process for producing a photoelectric conversion film comprising heat-treating a coating (A) of a photoconductive material composed chiefly of at least one of CdSe, CdS, CdTe, CdS.sub.x Se.sub.1-x and CdS.sub.x Te.sub.1-x wherein x is a real number of less than 1, opposite from a coating (B) in proximity thereto, the coating (B) being made of a material composed chiefly of CdS and a Cd halide.

Heat-treating Cd-containing photoelectric conversion film in the

A two-dimensional image reading unit includes a semiconductor layer made of a photoelectric material having a pin structure, a plurality of transparent electrodes aligned parallel to each other and provided on one face of the semiconductor layer, and a plurality of opaque electrodes aligned parallel to each other and provided on the other face of the semiconductor layer such that the opaque electrodes intercept with the transparent electrodes. A photoelectric cell is defined at each crossing point of the transparent and opaque electrodes.

Large scale contact type image reading unit using two-dimensional sensor

A two-dimensional image read-out device comprising a photoconducting layer, a plurality of X stripe electrodes applied on one surface of the photoconducting layer and arranged parallel with each other, and a plurality of Y electrodes applied on the other surface of the photoconducting layer and arranged parallel with each other in a direction perpendicular to the X electrodes. Both the X and Y electrodes are made of electrically conductive material, and the X or Y electrodes through which light from an image enters are made of transparent or translucent material. The light-entering side of the two-dimensional image read-out device is covered with an opaque material which allows the passage of light only through the picture elements which are formed at the intersections of the X and Y electrodes.

Two-dimensional image read-out device

A two-dimensional image read-out device comprises an insulating substrate, a plurality of Y-line electrodes formed on the insulating substrate and arranged parallel with each other, a plurality of X-line electrodes formed over the insulating substrate and arranged parallel with each other in a direction perpendicular to the Y-line electrodes, a photoconductive layer interposed between the Y-line and the X-line electrodes, gate electrodes for selecting a pair of the Y-line and the X-line electrodes, and three scanning circuits for selecting some of the Y-line electrodes, and some of the X-line electrodes, and at least one of the gate electrodes, respectively.

Two-dimensional image read-out sensor device

A two-dimensional image sensor includes a two-dimensional photoconductive layer. A flat common electrode is formed on one major surface of the two-dimensional photoconductive layer. A pin electrode array having a plurality of pin electrodes aligned in a first direction is disposed above a second major surface of the two-dimensional photoconductive layer. An optical fiber lens array is fixed to the pin electrode array in order to apply optical image onto the second major surface of the two-dimensional photoconductive layer at a same time when a high voltage is applied by the pin electrodes. A shift means is connected to the pin electrode array to shift the pin electrode array and the optical fiber lens array in a second direction which is perpendicular to the first direction. Electric current is obtained at the flat common electrode, which represents the optical image applied by the optical fiber lens array.

Growing community of inventors

Nara, Japan

Masataka Itoh