Kabushiki Kaisha Toshiba

Other

Fuji Photo Film Company, Limited

Tokyo Shibaura Denki Kabushiki Kaisha

Mitsui Toatsu Chemicals, Incorporated

Hiroshima University

Masataka Hirose

Tsuyoshi Ueno

Katsumi Suzuki

Shuji Yoshizawa

Kazuhiro Kawajiri

Yosuke Nakajima

Kazuyoshi Isogaya

Nobuhisa Kitagawa

Yoshinori Ashida

Masamichi Yamanishi

Ikuo Suemune

Yukio Osaka

Tadao Ichikawa

Tadashi Ae

Noriyoshi Yoshida

A photoconductive layer of an electrophotographic photoreceptor has a super lattice structure obtained by alternately stacking thin layers (the thickness falls within the range of 30 to 200 .ANG.) of at least two types of amorphous semiconductors having different optical band gaps. In the super lattice structure, when the layer having a narrow bandgap is sandwiched between the layers having wide bandgaps, a quantum well is formed. By the quantum effect, electrons in the well are shifted to cause high mobility of carriers. When the super lattice structure is applied to the photoconductive layer of the electrophotographic photoreceptor, the number of carriers generated at the interface between the thin layers is large. In the photoconductive layer having the super lattice structure, carrier lifetime is prolonged, in the potential well layer, 5 to 10 times that in a single layer, due to the quantum size effect, as compared with that of a single layer, thereby increasing light sensitivity of the photoconductive layer.

Electrophotographic photoreceptor with super lattice structure

Adjacent memory layers of a multi-layered integrated device as optically coupled, so that data written on one layer can be copied onto its adjacent layers through the optical coupling.

Three-dimensional integrated circuit with optically coupled shared

An amorphous silicon film forming apparatus forms an amorphous silicon film on a substrate. The apparatus is provided with a sealed vessel whose inside space is defined as a reaction chamber. A gas inlet pipe for introducing a gas containing SiH4 into the reaction chamber is connected to the vessel. A facing electrode provided in the reaction chamber and a power source connected to the facing electrode convert in a plasma generating region the gas introduced into the reaction chamber by the gas inlet pipe into plasma. A conductive mesh structure is disposed in the reaction chamber so as to surround the plasma generating region.

Amorphous silicon film forming apparatus

Formation process of amorphous silicon film

A method of forming an amorphous silicon film includes the steps of bringing a gas which is pre-excited by electron cyclotron resonance generated by an alternating electric field and a magnetic field into contact with a raw material gas containing silicone atoms in a reaction chamber in which a substrate is placed, so that the raw material gas is converted to radicals, and forming an amorphous silicon film on a surface of the substrate by the reaction of radicals therewith. Microwaves can be used as the alternating electric field.

Method of forming amorphous silicon film

A solid state image pickup device comprising a semiconductor substrate provided with light detecting sections and a scanning circuit for sequentially selecting the signals detected by the light detecting sections, wherein each light detecting section contains a silicon layer in which microcrystalline silicon and amorphous silicon are uniformly distributed and the crystal structure varies substantially continuously throughout. The light detecting section may further contain a hydrogenated amorphous silicon layer containing 6 to 37 atomic % of nitrogen, which is positioned on the silicon layer defined above. The light detecting section is connected with electrodes, one of which is transparent.

Solid state image pickup device utilizing microcrystalline and amorphous

Growing community of inventors

Hiroshima, Japan

Masataka Hirose