Tamura Corporation

National Institute of Information and Communications Technology, Incorporated

Tokyo University of Agriculture and Technology

Novel Crystal Technology, Inc.

National Institute of Information and Communications Technology, Incorporated Administrative Agency

Sicoxs Corporation

Masataka Higashiwaki

Kohei Sasaki

Akinori Koukitu

Yoshinao Kumagai

Hisashi Murakami

Ken Goto

Akito Kuramata

Man Hoi Wong

Shinya Watanabe

Kuniaki Yagi

Daiki Wakimoto

Naoki Hatta

Keita Konishi

Yoshiaki Nakata

Takafumi Kamimura

A GaO-based semiconductor device includes a GaO-based crystal layer including a donor, and an N-doped region formed in at least a part of the GaO-based crystal layer.

GA2O3-based semiconductor device

A semiconductor substrate includes a single crystal GaO-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal GaO-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal GaO-based substrate.

Semiconductor substrate, semiconductor element and method for producing semiconductor substrate

A trench MOS Schottky diode includes a first semiconductor layer including a GaO-based single crystal, a second semiconductor layer that is a layer laminated on the first semiconductor layer and that includes a GaO-based single crystal and a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering an inner surface of the trench, and a trench MOS gate that is buried in the trench so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes a lower layer on a side of the first semiconductor layer and an upper layer on a side of the anode electrode having a higher donor concentration than the lower layer.

Trench MOS Schottky diode

A semiconductor element includes a high-resistivity substrate that includes a &#x3b2;-GaO-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a &#x3b2;-GaO-based single crystal, and a channel layer on the buffer layer, the channel layer including a &#x3b2;-GaO-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a &#x3b2;-GaO-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a &#x3b2;-GaO-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a &#x3b2;-GaO-based single crystal including a donor impurity.

Semiconductor element and crystalline laminate structure

A trench MOS-type Schottky diode includes a first semiconductor layer including a GaO-based single crystal, a second semiconductor layer that is a layer laminated on the first semiconductor layer and that includes a GaO-based single crystal and a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer opposite to the first semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer opposite to the second semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench MOS gate that is embedded in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode.

Trench MOS-type Schottky diode

A GaO-based semiconductor element includes an undoped &#x3b2;-GaOsingle crystal film disposed on a surface of a &#x3b2;-GaOsubstrate, a source electrode and a drain electrode disposed on a same side of the undoped &#x3b2;-GaOsingle crystal film, a gate electrode disposed on the undoped &#x3b2;-GaOsingle crystal film between the source electrode and the drain electrode, and a region formed in the undoped &#x3b2;-GaOsingle crystal film under the source electrode and the drain electrode and including a controlled dopant concentration.

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A semiconductor element includes a base substrate that includes a GaO-based crystal having a thickness of not less than 0.05 &#x3bc;m and not more than 50 &#x3bc;m, and an epitaxial layer that includes a GaO-based crystal and is epitaxially grown on the base substrate. A semiconductor element includes an epitaxial layer that includes a GaO-based crystal including an n-type dopant, an ion implanted layer that is formed on a surface of the epitaxial layer and includes a higher concentration of n-type dopant than the epitaxial layer, an anode electrode connected to the epitaxial layer, and a cathode electrode connected to the ion implanted layer.

Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure

A high withstand voltage Schottky barrier diode includes a first layer that includes a first GaO-based single crystal including a first Group IV element and Cl at a concentration of not more than 5&#xd7;10cmand that has an effective donor concentration of not less than 1&#xd7;10and not more than 6.0&#xd7;10cm, a second layer that includes a second GaO-based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer, an anode electrode formed on the first layer, and a cathode electrode formed on the second layer.

High voltage withstand Ga2O3-based single crystal schottky barrier diode

Provided is a method for controlling a donor concentration in a GaO-based single crystal body. In addition, an ohmic contact having a low resistance is formed between a GaO-based single crystal body and an electrode. A donor concentration in a GaO-based single crystal body is controlled by a method which includes a step wherein Si, which serves as a donor impurity, is introduced into the GaO-based single crystal body by an ion implantation method at an implantation concentration of 1&#xd7;10cmor less, so that a donor impurity implanted region is formed in the GaO-based single crystal body, the donor impurity implanted region having a higher donor impurity concentration than the regions into which Si is not implanted, and a step wherein Si in the donor impurity implanted region is activated by annealing, so that a high donor concentration region is formed.

A GaOsemiconductor element, includes: an n-type &#x3b2;-GaOsubstrate; a &#x3b2;-GaOsingle crystal film, which is formed on the n-type &#x3b2;-GaOsubstrate; source electrodes, which are formed on the &#x3b2;-GaOsingle crystal film; a drain electrode, which is formed on the n-type &#x3b2;-GaOsubstrate surface on the reverse side of the &#x3b2;-GaOsingle crystal film; n-type contact regions, which are formed in the &#x3b2;-GaOsingle crystal film, and have the source electrodes connected thereto, respectively; and a gate electrode, which is formed on the &#x3b2;-GaOsingle crystal film with the gate insulating film therebetween.

A GaOsemiconductor element includes: an n-type &#x3b2;-GaOsingle crystal film, which is formed on a high-resistance &#x3b2;-GaOsubstrate directly or with other layer therebetween; a source electrode and a drain electrode, which are formed on the n-type &#x3b2;-GaOsingle crystal film; and a gate electrode, which is formed on the n-type &#x3b2;-GaOsingle crystal film between the source electrode and the drain electrode.

Ga2O3 semiconductor element

A method of forming a GaO-based crystal film includes epitaxially growing a GaO-based crystal film on a (001)-oriented principal surface of a GaO-based substrate at a growth temperature of not less than 750&#xb0; C. A crystal multilayer structure includes a GaO-based substrate with a (001)-oriented principal surface, and a GaO-based crystal film formed on the principal surface of the GaO-based substrate by epitaxial growth. The principal surface has a flatness of not more than 1 nm in an RMS value.

Method of forming Ga2O3-based crystal film and crystal multilayer structure

A GaN-based heterostructure field effect transistor capable of accomplishing higher output, higher breakdown voltage, higher speed, higher frequency, and the like. A heterostructure field effect transistor including a channel layer () of GaN and a barrier layer () of AlGaN, wherein the surface of a transistor element has an insulating film ().

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Tokyo, Japan

Masataka Higashiwaki