Fujitsu Corporation

Hgst Netherlands, B.v.

Western Digital Technologies, Inc.

Masashige Sato

Kazuo Kobayashi

Yo Sato

Keiichi Nagasaka

Susumu Okamura

Hideyuki Kikuchi

Masukazu Igarashi

Shinjiro Umehara

Masato Shiimoto

Takahiro Ibusuki

Hiroshi Ashida

Atsushi Tanaka

Masato Matsubara

Kojiro Komagaki

Masato Shimoto

Katsuro Watanabe

Hiroyuki Hoshiya

Hitoshi Kanai

Katsumi Hoshino

Takao Ochiai

Hideki Mashima

Masahiko Hatatani

Masukaza Igarashi

Tutomu Yasuda

Masao Shiimoto

Yiqun Zhang

A magnetic field-assisted magnetic recording (MAMR) head is provided, which includes a recording main pole, a seed layer, and a spin torque oscillator (STO) positioned over the main pole, in this order, in a stacking direction from a leading side to a trailing side of the recording head. The STO comprises a spin polarized layer (SPL), an interlayer with fcc structure, and a field generating layer (FGL), in this order in the stacking direction. The FGL comprises a low magnetic flux density interface (LMFDI) layer with bcc structure that directly contacts the interlayer.

Low magnetic flux density interface layer for spin torque oscillator

A magnetic field-assisted magnetic recording (MAMR) head is provided, which includes a recording main pole and a texture control layer (TCL), a seed control layer, and a spin torque oscillator (STO) positioned over the main pole, in this order, in a stacking direction from a leading side to a trailing side of the recording head. The STO has a crystallographic preferred growth orientation and includes a spin polarized layer (SPL). The TCL may include a Cu layer.

Texture-control layer for spin torque oscillator

A magnetic write head having a spin torque oscillator with a magnetic field sensor for accurately determining magnetic field oscillation frequency. The spin torque oscillator has one or more tunnel junction (TMR) sensors formed at the side of the spin torque oscillator. The TMR sensor advantageously detects a magnetic field signal that is an additive signal of both fields from the spin polarization layer and the magnetic field generation layer, thereby providing efficient detection of magnetic field and associated oscillation frequency.

Microwave assisted magnetic recording head having spin torque oscillator frequency detection

A magnetic oscillator for use in Microwave Assisted Magnetic Recording (MAMR). The magnetic oscillator can be a spin torque oscillator and includes a magnetic spin polarization layer, a magnetic field generation layer and a non-magnetic intermediate layer sandwiched between the magnetic spin polarization layer and the magnetic field generation layer. The non-magnetic intermediate layer is constructed of a material that provides improved performance, increased lifespan and thermal robustness. The magnetic intermediate layer is constructed of an alloy of Ag and an element X. More preferably the element X can be Sn or Zn.

Spin torque oscillator with high spin torque efficiency and reliability

Embodiments disclosed herein generally relate to a magnetic disk device employing a MAMR head. The MAMR head includes an STO. The STO comprises an underlayer, an SPL, an interlayer, an FGL, and a capping layer. The SPL is comprised of a high perpendicular magnetic anisotropy material. The SPL has a large effective perpendicular magnetic anisotropy field, and the SPL has a lower magnetic moment than the FGL. An applied current is adapted to flow in a direction from the FGL to the SPL resulting in the magnetization direction of the SPL being almost perpendicular to the FGL and anti-parallel to a head-gap magnetic field due to a relation between a first spin torque directed from the SPL to the FGL and a second spin torque directed from the FGL to the SPL.

Spin torque oscillator with low magnetic moment and high perpendicular magnetic anisotropy material

The present disclosure generally relates to a high-frequency oscillator for use in a recording device having a microwave-assisted magnetic recording head. The microwave-assisted magnetic recording head achieves a large assist effect by using an extended spin torque oscillator disposed between a main magnetic pole and a pole opposite the main magnetic pole. The spin torque oscillator obtains a strong high-frequency magnetic field and comprises a first non-magnetic spin scatterer, a reference layer, a first non-magnetic spin transfer layer, a first magnetic field generating layer, a second non-magnetic spin transfer layer, a second magnetic field generating layer, and a second non-magnetic spin scatterer. The spin torque oscillator has a drive current flowing though in the direction from the first magnetic field generating layer to the reference layer.

Extended spin torque oscillator

Embodiments disclosed herein generally relate to a MAMR head. The MAMR head includes an STO and a current switching system electrically coupled to the STO. The current switching system can be used to optimize the STO frequency by changing the STO bias polarity, i.e., by changing the direction of the current flowing to the STO. As a result, the difference between the STO frequency and the magnetic media frequency is minimized, which improves recording capability of the MAMR head.

Symmetrical STO for oscillation with both polarity bias

Embodiments disclosed herein generally relate to a MAMR head. The MAMR head includes an STO. The STO has a first magnetic layer, a second magnetic layer and an interlayer disposed between the first and second magnetic layers. One of the first and second magnetic layers is made of a negative polarization material while the other magnetic layer is made of a positive polarization material. As a result, the magnetizations in the first and second magnetic layers are in the same direction when in oscillation, which suppresses the partial cancellation of the magnetizations in the first and second magnetic layers and strengthens the AC magnetic field.

Negative-polarization spin-torque-oscillator

In one embodiment, a magnetic head includes a main magnetic pole positioned configured to generate a writing magnetic field when current is applied to a write coil, and a spin torque oscillator (STO) located adjacent the main magnetic pole, the STO being configured to generate a high frequency magnetic field when current is applied thereto, wherein the high frequency magnetic field is generated simultaneously to the writing magnetic field to assist in reversing magnetization of a magnetic recording medium. The STO includes: a spin polarization layer (SPL), a field generation layer (FGL) positioned adjacent the SPL, and one or more interlayers positioned between the SPL and the FGL, and a magnetization easy axis of the SPL is positioned in an in-plane direction such that the SPL has no perpendicular magnetic anisotropy.

Low Bs spin-polarizer for spin torque oscillator

In one embodiment, a spin torque oscillator (STO) includes a reference layer having a magnetization that is capable of free in-plane rotation, a field generation layer (FGL) including at least one magnetic film having an easy magnetization plane effectively in a film plane, wherein a magnetization of the FGL is capable of in-plane rotation, and a stabilizing layer (STL) positioned on a side of the FGL opposite the reference layer, the STL including a magnetic film having an easy magnetization plane effectively in a film plane, wherein a magnetization of the STL is capable of in-plane rotation, wherein a product of a saturation magnetization of the STL multiplied by a thickness of the STL is less than half a product of a magnetization of the FGL multiplied by a thickness of the FGL.

Stabilizing layer for a spin torque oscillator (STO)

The present disclosure generally relates to a structure for a perpendicular microwave-assisted magnetic recording head used in a magnetic disk drive. A first spin-torque oscillator and a second spin-torque oscillator are positioned between the main pole of a recording head and a trailing shield, and are separated by a spin torque shield layer. The first spin-torque oscillator comprises a first magnetic layer, a first non-magnetic interlayer, and a second magnetic layer. The second spin-torque oscillator comprises a third magnetic layer, a second non-magnetic interlayer, and a fourth magnetic layer. An applied current is adapted to flow in a direction from the second magnetic layer to the first magnetic layer, and from the fourth magnetic layer to the third magnetic layer.

Pile spin-torque oscillator with AF-mode oscillation for generating high AC-field in microwave-assisted magnetic recording

A magnetic sensor having improved pinned layer robustness for improved reliability and having improved side shielding for improved track resolution at very high data densities. The sensor has a pinned layer structure with laterally extending wing portions that become thicker with increasing distance from the air bearing surface and has a side shield structure has a thickness that decreases with increasing distance from the air bearing surface.

Magnetic read sensor with novel pinned layer and side shield design for improved data track resolution and magnetic pinning robustness

In one embodiment, a tunnel magnetoresistance (TMR) head includes a lead layer above a substrate, a seed layer above the lead layer, an antiferromagnetic (AFM) layer above the seed layer, a first ferromagnetic layer above the AFM layer, a second ferromagnetic layer above the first ferromagnetic layer, a coupling layer between the first and second ferromagnetic layers, the coupling layer causing a magnetization of the second ferromagnetic layer to be coupled to a magnetization of the first ferromagnetic layer, a fixed layer above the second ferromagnetic layer, an insertion layer adjacent the fixed layer or in the fixed layer, a barrier layer above the fixed layer, a free layer above the barrier layer, and a cap layer above the free layer. In another embodiment, the insertion layer is from about 0.05 nm to 0.3 nm in thickness and includes Ta, Ti, Hf, and/or Zr, and the free layer includes CoFeB.

Growing community of inventors

Atsugi, Japan

Masashige Sato