Hitachi Automotive Systems, Ltd.

Hitachi, Ltd.

Masashi Yura

Kinya Nakatsu

Masahiro Iwamura

Mutsuhiro Mori

Toshiya Satoh

Takeshi Tokuyama

Masatoshi Kanamaru

Masahide Hayashi

Naoki Sakurai

Yusuke Takagi

Shinichi Fujino

Yoshimasa Takahashi

Daisuke Maeda

Toshiaki Ishii

Yujiro Kaneko

Nobutake Tsuyuno

Heewon Jeong

Tokihito Suwa

Junpei Kusukawa

Akihiro Okamoto

To provide a physical quantity sensor having excellent reliability by reducing the influence of a force applied from the outside. Disclosed is a physical quantity sensor, which has a weight or a movable electrode formed on a device substrate, and an outer peripheral section that is disposed to surround the weight or the movable electrode, said weight or movable electrode being displaceable in the rotation direction in a plane. When the weight or the movable electrode is displaced in the rotation direction in the plane, the physical quantity sensor is provided with a rotation space at the outer peripheral section of an end portion of the weight or the movable electrode, said end portion being in the direction viewed from the center position of the weight or the movable electrode.

Physical quantity sensor

For a small sensor produced through a MEMS process, when an electrode pad, wiring, or a shield layer is formed in a final step, it is difficult to nondestructively investigate whether a structure for sensing a physical quantity has been processed satisfactorily. In the present invention, in a physical quantity sensor formed from an MEMS structure, in a structure in which a surface electrode having through wiring is formed on the surface of an electrode substrate and the periphery thereof is insulated, forming a shield layer comprising a metallic material on the surface of the electrode substrate in a planar view and providing a space for internal observation inside the shield layer makes it possible to check for internal defects.

Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di&#x3e;(1.36&#xd7;10-8&#xd7;Vt2+3.4&#xd7;10-5&#xd7;Vt&#x2212;0.015)&#xd7;&#x2208;r, where a relative permittivity of the insulating member is &#x2208;r and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.

Power module

Portion of power module for power inverter

Portion of a power module for power inverter

An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit, a level shift circuitincluding a current sensing circuit, a drive section of a lower arm drive circuit, and a drive signal processing circuitare integrated and built in one high withstand voltage IC chip. Circuit elements constituting a final output stage buffer sectionof the upper arm drive circuitare built in a vertical p-channel MOS-FET chipand a vertical n-channel MOS-FET chip. Circuit elements constituting a final output stage buffer sectionof the lower arm drive circuitare built in a vertical p-channel MOS-FET chipand a vertical n-channel MOS-FET chip. Thus, a driver ICis fabricated.

Integrated circuit for driving semiconductor device and power converter

Growing community of inventors

Hitachinaka, Japan

Masashi Yura