Nichia Corporation

Stella Chemifa Corporation

Otsuka Chemical Co., Ltd.

Toyo Aluminium Kabushiki Kaisha

Meiji Co., Ltd.

Masashi Yamamoto

Masahiko Sano

Tetsuo Nishida

Mitsuhiro Nonaka

Sojiro Kon

Kazumi Kamada

Shinichi Nagahama

Kenji Sato

Kazutaka Hirano

Akihiro Nabeshima

Keiji Sakamoto

Tomoya Yanamoto

Daisuke Morita

Yasutaka Tashiro

Hiroaki Tokuda

Takashi Higono

Toshitaka Sakaguchi

Yoshifumi Katsura

Megumi Tomisaki

Kazunori Yamada

Masato Saito

Yoshinori Sato

Tomonobu Sekiguchi

Shuhei Kanno

Megumi Tornisaki

Yuka Aoyama

Natsuki Mine

Provided are a nonaqueous electrolytic solution for a secondary battery that exhibits excellent cycle characteristics even in high temperature environment, and a secondary battery including the same. The nonaqueous electrolytic solution for a secondary battery of the present invention is a nonaqueous electrolyte solution for a secondary battery which is used for a secondary battery, including at least one component (A) represented by the following chemical formula (1):

Nonaqueous electrolyte solution for secondary battery, and secondary battery provided with said solution

A fuel cell catalyst which has high power output characteristics and suppresses degradation of power generation performance due to starting, stopping or load variation; a manufacturing method thereof; a membrane electrode assembly for fuel cell; and a fuel cell including the same. The fuel cell catalyst includes at least catalytically active species and a carrier supporting the catalytically active species. The catalytically active species are at least one selected from the group consisting of platinum, a platinum alloy, and a core-shell catalyst in which a core of a metal different from platinum is coated with a shell containing platinum, the carrier is a carbon material, and at least one of the catalytically active species and the carrier contain(s) fluorine atoms.

Fuel cell catalyst, membrane electrode assembly for fuel cell, and fuel cell including the same

A non-aqueous electrolytic solution includes a phosphoric acid diester salt, which can suppress deterioration of charge-discharge characteristics of a power storage element, and can suppress the rise in internal resistance after storage at high temperature. The phosphoric acid diester salt is represented by the following chemical formula (1): in which Mrepresents a hydrogen ion, an alkali metal ion, an alkali earth metal ion, an aluminum ion, a transition metal ion, or an onium ion, Rand Rare different from each other and represent a hydrocarbon group having 1 to 10 carbon atoms, or a hydrocarbon group having 1 to 10 carbon atoms and having at least one of a halogen atom, a heteroatom, and an unsaturated bond, and n represents a valence.

Non-aqueous electrolytic solution for power storage element

Disclosed is a phosphoric acid diester salt which can suppress deterioration of charge-discharge characteristics of a power storage element, and can suppress the rise in internal resistance after storage at high temperature, a production method therefor, a non-aqueous electrolytic solution for a power storage element, and a power storage element. Disclosed is a phosphoric acid diester salt represented by the following chemical formula (1): wherein Mrepresents a hydrogen ion, an alkali metal ion, an alkali earth metal ion, an aluminum ion, a transition metal ion, or an onium ion; Rand Rare different from each other and represent a hydrocarbon group having 1 to 10 carbon atoms, or a hydrocarbon group having 1 to 10 carbon atoms and having at least one of a halogen atom, a heteroatom, and an unsaturated bond; and n represents a valence.

Phosphoric acid diester salt, production method therefor, non-aqueous electrolytic solution for power storage element, and power storage element

The present invention provides a multilayer body, a packaging material and a container, each of which can maintain excellent water repellent properties and non-adhesive properties. Specifically, the present invention describes a non-adhesive multilayer body wherein hydrophobic oxide fine particles having an average primary particle diameter of 3-100 nm adhere to at least a part of the outermost layer.

Multilayer body and container

A method is directed to producing liquid fermented milk, suppressing an increase in acidity and a decrease in pH over time during refrigerated storage, keeping a refreshing flavor (sour taste) originating from yogurt lactic acid bacteria for a long time, and suppressing production of an acid during storage to maintain good quality, without requiring heating after a fermentation step, use of a particular additive, and the like. The method for producing liquid fermented milk which uses a rod-shaped lactic acid bacteria and a coccus-shaped lactic acid bacteria as lactic acid bacteria to be added to a raw material for fermented milk, and which includes a homogenization step of obtaining the liquid fermented milk at a homogenization pressure of from 50 MPa to 100 MPa.

Method for manufacturing liquid fermented milk

A quaternary ammonium salt of the formula (1), a composition containing the quaternary ammonium salt and an organic solvent, and an electrochemical device using the salt wherein Rand Rare both methyl and Xis BFor N(CFSO).

Quaternary ammonium salt and composition, and electrochemical device

A substratefor growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layersto, an active layerand p-type nitride semiconductor layerstoare laminated to form a stack of nitride semiconductor on the first face of the substrate. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substratefor growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layerand the second bonding layerare faced with each other and, then, pressed with heat to bond together. After that, the substratefor growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

Nitride semiconductor device comprising bonded substrate and fabrication method of the same

A quaternary ammonium salt of the formula (1), electrolytic solution and electrochemical device using the salt wherein Ris straight-chain or branched alkyl having 1 to 4 carbon atoms, Ris methyl or ethyl, and Xis a fluorine-containing anion.

Quaternary ammonium salt, electrolyte, and electrochemical device

A substratefor growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layerstoan active layerand p-type nitride semiconductor layerstoare laminated to form a stack of nitride semiconductor on the first face of the substrateA first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layerA supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substratefor growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layerand the second bonding layerare faced with each other and, then, pressed with heat to bond together. After that, the substratefor growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.

Opposed terminal structure having a nitride semiconductor element

A method of producing an efficient nitride semiconductor element having an opposed terminal structure. The method includes a growing step for growing the nitride semiconductor further having an undoped GaN layer on a different materials substrate; subsequently, an attaching step for attaching the supporting substrate to the first conductive type nitride semiconductor layer side of the nitride semiconductor and interposing a first terminal between them; and subsequently, an exposing step for exposing the second conductive type nitride semiconductor layer by eliminating the different material substrate and the undoped GaN.

Growing community of inventors

Anan, Japan

Masashi Yamamoto