Asm Japan K.k.

Bridgestone Corporation

Taiyo Nippon Sanso Corporation

Samsung Electronics Co., Ltd.

Mitsubishi Electric Corporation

Masashi Yamaguchi

Nobuo Matsuki

Atsuki Fukazawa

Yasuyoshi Hyodo

Yoshinori Morisada

Yasuyuki Yamamoto

Takeshi Saito

Masahiro Ueda

Junichi Takahashi

Yoshiyuki Hagihara

Manabu Kato

Naoki Ohara

Yijun Liu

Atsushi Miyasaka

Makoto Tsuruta

Keita Yumii

Kamal Kishore Goundar

Seijiro Umemoto

Naoki Seino

Shigeaki Matsuo

Devendra Kumar

Masaki Morikawa

Midori Matsunaga

Kyu Tae Na

Eun Kyung Baek

Shinya Kaneko

Masanobu Suzuki

The object of the present invention is to provide a high-temperature oxygen generation device and a high-temperature oxygen generation method which can efficiently supply preheated high-temperature oxygen gas regardless of pressure conditions from normal pressure to high pressure, without requiring upsizing or expansion of the equipment, and the present invention provides a high-temperature oxygen generation device () in which a high-temperature gas (G) and an oxygen gas (G) to be heated are mixed to generate a high-temperature oxygen gas (G), wherein the high-temperature oxygen generation device () includes a burner () which generates the high-temperature gas (G), and a preheating chamber () which is provided on the downstream side of the burner () and mixes the high-temperature gas (G) and the oxygen gas (G) to be heated, and the burner () includes a combustion chamber () which forms a flame by a fuel gas (G) and an oxygen gas (G) for combustion, a fuel flow path () which supplies the fuel gas (G) into the combustion chamber (), a first oxygen flow path () and a second oxygen flow path () which supply the oxygen gas (G) for combustion into the combustion chamber (), and a flow path () for oxygen to be heated which communicates with the preheating chamber (), and supplies the oxygen gas (G) to be heated toward the preheating chamber ().

High-temperature oxygen generation device and high-temperature oxygen generation method

One object of the present invention is to provide a burner for producing inorganic spheroidized particles which can efficiently melt and spheroidize even organic powder with a large particle size distribution. The present invention provides a burner for producing inorganic spheroidized particles, including; a raw material powder supply path configured to supply inorganic powder as raw material powder; a first fuel gas supply path (A) configured to supply a first fuel gas; and a first combustion-supporting gas supply path (A) configured to supply a first combustion-supporting gas; wherein the raw material powder supply path includes: a first supply path (A) configured to extend in an axial direction of the burner (); a first collision wall (D) configured to be located at the top of the first supply path (A); a plurality of second supply paths (B) configured to be branched from the top of the first supply path (A), and extend radially from the center of the burner (); one or more dispersion chambers (C) configured to be located at the top of the second supply path (B), and have a space in which the cross-sectional area is larger than the cross-sectional area in the second supply path (B); and one or more raw material ejection holes () configured to communicate with the dispersion chamber (C).

Burner for producing inorganic spheroidized particles, apparatus for producing inorganic spheroidized particles, and method for producing inorganic spheroidized particles

At a run-flat tire, given that an average radius of curvature of a case line between an intersection point (0.1SHp) and an intersection point (0.2SHp) when viewed in a cross-section along a tire rotation axis is radius R1, and that an average radius of curvature of the case line between an intersection point (0.4SHp) and an intersection point (0.6SHp) when viewed in the cross-section along the tire rotation axis is radius R2, ratio R2/R1 is set to be greater than 0.3.

Run-flat tire

The object of the present invention is to provide a burner which is capable of decreasing the amount of NOx emission and heating the object to be heated uniformly with excellent heat transfer efficiency when heating the object to be heated while oscillating the flame by self-induced oscillation, and a method for heating using a burner, and the present invention provides a burner including a center fluid ejection outlethaving a sectional fan shape in which an interval between a pair of side wallsandgradually expands toward a downstream side, a pair of openingsandprovided on side wallsof a fluid ejection flow pathon an upstream side of the central fluid ejection portand communicated by a communication pipe, a first peripheral fluid ejection outlet arranged around the center fluid ejection outlet, a second peripheral fluid ejection outlet is arranged at a position at which a distance between a center thereof and a center of the center fluid ejection outlet is larger than a distance between a center of the first peripheral fluid ejection outlet and the center of the center fluid ejection outlet, and in a direction orthogonal to an expanding direction of the center fluid ejection outlet, and a third peripheral fluid ejection outlet is arranged at a position at which a distance between a center thereof and the center of the center fluid ejection outlet is larger than the distance between the center of the second peripheral fluid ejection outlet and the center of the center fluid ejection outlet, and in the direction orthogonal to the expanding direction of the center fluid ejection outlet.

Burner and method for heating using burner

A pneumatic tireaccording to the present invention has turbulence generating protrusions on a tire surface, each of the turbulence generating protrusions having a sharp edge part. In the pneumatic tire, the following relationships are satisfied: 0.015&#x2266;H/&#x221a;R&#x2266;0.64; 1.0&#x2266;p/H&#x2266;50.0; 0.1&#x2266;H/e&#x2266;3.0; 1.0&#x2266;L/H&#x2266;50.0; and 1.0&#x2266;(p&#x2212;w)/w&#x2266;100.0, where 'R' is a tire radius, 'H' is a protrusion maximum height, &#x201c;p&#x201d; is a protrusion circumferential-direction interval, &#x201c;e&#x201d; is a protrusion radial-direction interval, &#x201c;L&#x201d; is a protrusion radial-direction length, and &#x201c;w&#x201d; is a protrusion circumferential-direction length.

Pneumatic tire having turbulence generating protrusions provided inside a groove

The present invention relates to a pneumatic tirein which turbulent-flow generating projectionseach extending from an inner circumference side to an outer circumference side are provided on a outer circumferential facewhich is tire surface of tire side portionat intervals in a tire circumferential direction. Each of the turbulent-flow generating projectionsincludes an edge portionwhen being viewed in a cross-sectional shape taken along a direction perpendicular to an extending direction thereof, and a front wall angle &#x3b8; formed between a front wall faceof each turbulent-flow generating projectionand the tire surface (outer circumferential face) is set in the range of 70&#xb0; to 110&#xb0;, the front wall face being hit by an airflow.

Pneumatic tire

The present invention includes a run-flat tirecomprising a plurality of turbulence generation ridgeswhich extend on a surface of a tire side portionin a tire-radial direction and which are arranged at a pitch in a tire-circumferential direction and relationship Si&#x3e;So is satisfied. Si is the sum of sidewall areas of all the turbulence generation ridges located at the inner side, in the tire-radial direction, of a maximum width position of the pneumatic tire. So is the sum of sidewall areas of all the turbulence generation ridges located at the outer side, in the tire-radial direction, of the tire maximum width position.

To provide a pneumatic tire having a tire side portion with an enhanced durability according to the present invention, a run flat tire () has a turbulent generating concavo-convex part () composed of grooves and ribs and extending along at least part of a tire side portion, and a pattern is set to the turbulent generating concavo-convex part (), in which for the turbulent generating concavo-convex part (), letting h be a height, p be a pitch, and w be a width, a relationship is met such that 1.0&#x2266;p/h&#x2266;50.0, and 1.0&#x2266;(p&#x2212;w)/w&#x2266;100.0.

Pneumatic tire with heat dissipating side portion

A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

Method of forming silicon-containing insulation film having low dielectric constant and low film stress

A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CHX, wherein &#x3b1; and &#x3b2; are natural numbers of 5 or more; &#x3b3; is an integer including zero; X is O, N or F) having a boiling point of about 20&#xb0; C. to about 350&#xb0; C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and COgas or Hgas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.

Method of forming carbon polymer film using plasma CVD

A silicon-containing insulation film is formed on a substrate by plasma polymerization by introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

A hard film is formed on an insulation film formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and optionally an additive gas such as alcohol to a reaction space of a plasma CVD apparatus, and applying low-frequency RF power and high-frequency RF power. The silicon-containing hydrocarbon compound includes a cyclic Si-containing hydrocarbon compound and/or a linear Si-containing hydrocarbon compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

Method for forming low-k hard film

An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

Insulation film on semiconductor substrate and method for forming same

An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

Growing community of inventors

Tama, Japan

Masashi Yamaguchi