Kokusai Denshin Denwa Kabushiki Kaisha

Terumo Kabushiki Kaisha

Yamaha Hatsudoki Kabushiki Kaisha

Kdd Corporation

Masashi Usami

Yuichi Matsushima

Shigeyuki Akiba

Munefumi Tsurusawa

Katsuyuki Utaka

Tomoya Kawamura

Yuuna Irimoto

Tatsuya Oouchi

Masatoshi Suzuki

Kazuo Sakai

Taiga Nakano

Yukio Noda

Yuichi Tada

Koki Yamashita

Takumi Fukuda

Provided is a vascular puncture device including a support table that is capable of supporting a main body including an imaging unit that is capable of coming into contact with a skin surface of an arm of a human body and acquiring a cross-sectional image of the arm, a drive unit that moves a puncture needle, and a control unit that is capable of controlling a movement of the drive unit, the support table including a holding unit capable of holding the arm, in which the support table is capable of supporting the main body and being separated from the main body.

Support table and vascular puncture device

Catheter handle

Inflation valve of hemostasis device

Hemostasis device

Motorcycle

An optical processor comprising, a semiconductor saturable absorber; a current source for injecting a current to the semiconductor saturable absorber; a signal light introducer for introducing a signal light to the saturable absorber; a control light introducer for introducing a control light having a wavelength not longer than the wavelength of the signal light into the semiconductor saturable absorber; an assist light introducer for introducing an assist light having a wavelength longer than the wavelength of the signal light into the semiconductor saturable absorber; and a signal light extractor for extracting the signal light after treatment by the semiconductor saturable absorber.

Optical processing device

An optical short pulse reshaping device capable of effectively eliminating noise from or reshaping of input optical short pulses of a pulse width of picosecond order shorter than a carrier life time. The device comprises: a semiconductor laser element, means for injecting an electric current to the semiconductor laser element for obtaining an oscillation state of the semiconductor laser element, means for injecting into the semiconductor laser element input optical short pulses of a wavelength shorter than that of the oscillation light of said semiconductor laser element, and means for taking out optical short pulses emitted from the semiconductor laser element in distinction from its oscillation output light.

Optical short pulse reshaping device

There is disclosed a reshaping device for optical short pulses to effectively perform reshaping of and eliminate noise from an optical short pulse of a pulse width of pico second order less than a carrier life time. Input optical short pulses are applied to a saturable absorption element, while an assist light of a wavelength longer than that of the input optical signal pulses is also applied to the saturable absorption element to accelerate, by stimulated emission, recombination of excited electrons and holes produced in the saturable absorption element in response to the input optical signal pulses, so that the input optical signal pulses reshaped are derived from the saturable absorption element.

Reshaping device for optical short pulses

A multiple quantum well structure which permits substantially uniform injection of carriers from the outside into respective quantum well layers of the multiple quantum well and a semiconductor device employing such a multiple quantum well structure. A multiple quantum well structure is formed by laminating at least two pairs of quantum well layers each having a thickness substantially equal to the de Broglie's wave-length of electrons and barrier layers of an energy gap greater than that of the quantum well layers, and the multiple quantum well structure is doped with at least one of p-type and n-type impurities in a manner to slope the energy band of the entire multiple quantum well structure so that carriers injected thereinto are distributed uniformly throughout it.

Multiple quantum well structure and semiconductor device using the same

A semiconductor device with a strained-layer superlattice is disclosed, in which a first semiconductor and a second semiconductor of a lattice constant smaller than that of the first semiconductor are stacked on a clad layer of a lattice constant substantially intermediate between those of the first and second semiconductors to form the strained-layer superlattice. The lattice constant of the strained-layer superlattice in the direction of its plane in the free space is nearly equal to the lattice constant of the clad layer. A third semiconductor of a lattice constant substantially equal to that of the clad layer is laminated between the first and second semiconductors stacked one on the other.

Semiconductor device with strained-layer superlattice

A quantum well structure is disclosed, which is comprised of a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confinement layers of an energy gap greater than that of the quantum well layer. A second material of a lattice constant different from that of a first material primarily for the quantum well layer is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer. A semiconductor device which employs such a quantum well structure and is so constructed as to utilize its physical phenomenon which is caused by the energy levels in the forbidden band. In concrete terms, the present invention has its feature in allowing ease in the fabrication of an intermediate infrared or blue light emitting device, for instance.

Quantum well structure and semiconductor device using the same

A distributed feedback semiconductor device is disclosed which has a diffraction grating disposed near a light emitting active layer, a double hetero structure with the active layer sandwiched between n- and p-type semiconductors and n- and p-side electrodes for injection a current into the active layer, one of the n- and p-side electrodes being divided into a plurality of electrodes, and in which a current is injected into the active layer across the n- and p-side electrodes for laser oscillation to obtain output light. A first current source is connected to each of electrodes into which one of the n- and p-side electrodes is divided, and a second current source is connected to the divided electrodes via resistors, for injecting a current into the active layer in a desired ratio. The first and second current sources are controlled in accordance with the light emitting state of the active layer. In operation, a current is injected into the active layer through the divided electrodes while controlling the injected-current density in the active layer to be uniform in the direction of travel of light until the injected current reaches a threshold current at which the distributed feedback semiconductor laser device starts to oscillate, and a current thereafter injected while controlling the injected-current density to be maximum in at least that region of the active layer in which the light intensity is maximum in the direction of travel of light.

Distributed feedback semiconductor laser device and current injection

A distributed feedback semiconductor laser with monitor is disclosed, in which the energy gap of a light absorbing layer provided on the window region alone is smaller than the energy gap of the light emitting layer, and in which an independent pn junction isolated from the pn junction in the laser region is provided in or at one edge of the light absorbing layer on the window region.

Distributed feedback semiconductor laser with monitor

A semiconductor device with a distributed Bragg reflector is disclosed, in which periodic corrugations are formed between two semiconductor layers along the direction of travel of light. In accordance with the present invention, the periodic corrugations are formed by grid-like layers of a refractory material. The refractory material is an insulator, a refractory metal or a laminate member of an insulator and a refractory metal.

Growing community of inventors

Tokyo, Japan

Masashi Usami