Ushio Denki Kabushiki Kaisha

Masashi Tsukihara

Kohei Miyoshi

Takahiro Inoue

Toru Sugiyama

An LED element is provided with: a first semiconductor layer formed of an n-type nitride semiconductor; a second semiconductor layer formed on top of the first semiconductor layer and formed of quaternary mixed crystals of AlGaInN (0&#x3c;x1&#x3c;1, 0&#x3c;y1&#x3c;1, 0&#x3c;z1&#x3c;1 and x1+y1+z1=1); a heterostructure formed on top of the second semiconductor layer and constituted of a laminate structure of a third semiconductor layer formed of InGaN (0&#x3c;x2&#x3c;1) having a film thickness of greater than or equal to 10 nm, and a fourth semiconductor layer formed of AlGaInN (0&#x3c;x3&#x3c;1, 0&#x3c;y3&#x3c;1, 0&#x2264;z3&#x3c;1 and x3+y3+z3=1); and a fifth semiconductor layer formed on top of the heterostructure and formed of a p-type nitride semiconductor.

Light emitting element

Provided is a nitride semiconductor light emitting element in which deep-level light emission is suppressed, monochromaticity is improved, and light is emitted in a high-efficiency manner. A nitride semiconductor light emitting element having a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer contains AlGaN (0&#x3c;n&#x2266;1), and has a C concentration of 1&#xd7;10/cmor less.

Nitride semiconductor light emitting element

Provided is an LED element that ensures horizontal current spreading within an active layer, improving light-emission efficiency, without causing problems due to lattice mismatch in an n-type semiconductor layer adjacent to the active layer. This LED element is obtained by inducing c-axis growth of nitride semiconductor layers on a support substrate, and comprises a first semiconductor layer constituted of an n-type nitride semiconductor, a current-diffusion layer, an active layer constituted of a nitride semiconductor, and a second semiconductor layer constituted of a p-type nitride semiconductor. The current-diffusion has a hetero-structure having a third semiconductor layer constituted of InGaN (0&#x3c;x&#x2266;0.05) and a fourth semiconductor layer constituted of n-AlGaInN (0&#x3c;y1&#x3c;1, 0&#x3c;y2&#x3c;1, 0&#x2266;y3&#x2266;0.05, y1+y2+y3=1), the third semiconductor layer having a thickness of 10 nm or more and 25 nm or less.

LED element

The semiconductor light-emitting element includes: a substrate; a semiconductor layer that is provided over the substrate; a first electrode that is provided in contact with part of an upper surface of the semiconductor layer and includes a current supply part; a second electrode that is provided in part of a region vertically below a region where the current supply part is not provided, that is in contact with part of the semiconductor layer; and a first current blocking layer that is provided in a region including a region vertically below the current supply part and that is in contact with part of the semiconductor layer, wherein a contact resistance at an interface between the first current blocking layer and the semiconductor layer is higher than that at an interface between the second electrode and the semiconductor layer.

Semiconductor light-emitting element and method for producing the same

Provided is an LED element which achieves high light extraction efficiency even at low operating voltages and which can be produced using a simple process. The LED element has a first semiconductor layer made of a p-type nitride semiconductor, a light-emitting layer made of a nitride semiconductor formed on the upper layer of the first semiconductor layer, a second semiconductor layer made of an n-type nitride semiconductor formed on the upper layer of the light-emitting layer, and a transparent electrode formed on the whole surface of the second semiconductor layer. The second semiconductor layer in at least a region that is in contact with the transparent electrode is made of AlGaN (0&#x3c;n&#x3c;1) and has an n-type impurity concentration larger than 1&#xd7;10/cm.

Growing community of inventors

Himeji, Japan

Masashi Tsukihara