Fujitsu Corporation

Fujitsu Semiconductor Limited

Masashi Takase

Takanori Watanabe

Shigenori Ichinose

Toru Osajima

Noboru Yokota

Takashi Iida

Masamichi Kamiyama

In a semiconductor device including a multilayer pad, the multilayer pad comprises a first pad layer provided over a semiconductor substrate to have a first copper wiring region and a first intralayer insulating region provided within the first copper wiring region, and a second pad layer provided over the first pad layer via an interlayer insulating film to have a second copper wiring region and a second intralayer insulating region provided within the second copper wiring region. In the semiconductor device, the first copper wiring region, the first intralayer insulating region, the second copper wiring region, and the second intralayer insulating region are provided in the first and second pad layers such that the multilayer pad has a layout in which all the regions are covered with the copper wiring when the multilayer pad is perspectively viewed from a perpendicularly upper direction for the semiconductor substrate.

Semiconductor device with crack-resistant multilayer copper wiring

A semiconductor integrated circuit includes a semiconductor chip; an inner cell region; a plurality of input/output cell regions which are located around the inner cell region, and a plurality of pads which are provided between the plurality of input/output regions and sides of the semiconductor chip. Each unit area of the plurality of input/output cell regions is assigned to a corresponding input/output cell so as to be just sufficient for the corresponding input/output cell.

Semiconductor integrated circuit and method for making wiring layout of

Growing community of inventors

Kawasaki, Japan

Masashi Takase