Sae Magnetics (h.k.) Limited

Tdk Corporation

Sony Corporation

Nhk Spring Co., Ltd.

Nippon Mektron Limited

Sae Magentics (h.k.) Ltd.

Sae Magnetice (h.k.) Ltd.

Other

Fujitsu Corporation

Sea Magnetics (h.k.) Ltd.

Masashi Shiraishi

Tamon Kasajima

Ming Gao Yao

MingGao Yao

Takeshi Wada

Haruyuki Morita

Yi Xie

Takehiro Kamigama

Takashi Honda

Hisashi Kajiura

Mitsuyoshi Kawai

Masafumi Ata

Masanori Sakai

Tsuyoshi Umehara

Kai Wu

YiRu Xie

Norikazu Ota

Ichiro Takadera

Ryuichiro Maruyama

Ichiro Yagi

Toyotaka Kobayashi

Eisuke Negishi

Ken-ichi Takano

Ping Shang

Izumi Nomura

Zhihong Wang

Hironobu Hayashi

Kenichi Takano

Isamu Sato

Noboru Yamanaka

Tsutomu Aoyama

Atsuo Yamada

Yiu Sing Ho

Akihiro Takei

Akio Nakao

Houjin Huang

Shunichi Kudo

Takao Matsumoto

Atsushi Hirose

Ming-Gao Yao

Yi-Ru Xie

Yoshikazu Soeno

Shigeaki A Wachi

Dharam Pal Gosain

Koji Kadono

Yasuji Takagi

Akira Nojima

Takamitsu Tsuna

Shinji Ichikawa

Katsuhiko Tomita

Mitsuaki Miyakoshi

Norimasa Fujita

Weiguang Zhu

Hiroyoshi Nakajima

Akira Tadakuma

Lik Hang Ken Wan

Xi Yao

Yasuhiro Watanabe

Hiroshi Miyazawa

Kenji Inage

Shinji Hiraoka

Takahiro Nakamura

Li Yan Zhu

Masaharu Ishizuka

Anthony Reymund Melad Binarao

Hiroshi Take

Makoto Yoshida

Cheng Bu Heng

Bing Ma

Tsz Lok Cheng

Koichi Miyagawa

Takuro Tsuruda

Noboru Shinohara

Koichi Shiozawa

Jumpei Tsuchiya

FengAn Huang

LiYan Zhu

A thin-film filter includes thin-film part having a film surface and a rear film surface arranged at the rear side of the film surface, a plurality of through holes, being formed to penetrate the thin-film part from the film surface to the rear film surface, the through holes are formed along by a slanting direction being made an acute angle or an obtuse angle with the film surface, and stripes-formed inner wall surfaces. The stripes-formed inner wall surfaces include stripe-like parts formed along by the slanting direction. The stripes-formed inner wall surfaces are formed inside the respective through holes.

Thin-film filter, thin-film filter substrate, method of manufacturing the thin-film filter, method of manufacturing the thin-film filter substrate, MEMS microphone and method of manufacturing the MEMS microphone

A MEMS package has a MEMS chip, a package substrate which the MEMS chip is adhered, a chip cover which wraps the MEMS chip, and a pressure regulation film which is adhered to the front surface of the chip cover. The chip cover has a vent which is formed in a chip outside area, arranged outside than the MEMS chip, the pressure regulation film has a slit. The slit is arranged in the neighborhood of the vent and the vent is covered with the pressure regulation film.

MEMS package, MEMS microphone and method of manufacturing the MEMS package

A MEMS microphone includes a MEMS transducer, a sealing cover, and a package substrate. The MEMS transducer includes an element substrate, a plurality of cantilevered beams, and a weight. An airtight sealing structure is formed with the sealing cover and the package substrate, which is formed by mounting the MEMS transducer on the package substrate, and adhering the sealing cover to the package substrate so as to surround the MEMS transducer.

MEMS microphone and method of manufacturing the MEMS microphone

A MEMS package has a MEMS chip, a package substrate, a dammed-seal part. The MEMS chip has an element substrate which a movable element is formed, the element substrate has an element hole-part which the movable element is arranged. The dammed-seal part has an annular dam-member which is formed on the element substrate so as to surround the element hole-part and a gel member. The gel member is formed by hardening of gel which is applied on the annular dam-member.

MEMS package, MEMS microphone, method of manufacturing the MEMS package and method of manufacturing the MEMS microphone

A MEMS package has a MEMS chip, a package substrate which the MEMS chip is adhered, a chip-cover which wraps the MEMS chip, and a cover-supporting part which supports the chip-cover from the inside. In the MEMS package, the chip-cover is supported by the cover-supporting part to form a back chamber, surrounded by the chip-cover and the package substrate.

A MEMS package has a MEMS chip, and a package substrate which the MEMS chip is adhered. The MEMS chip has an element substrate which a movable element is formed. The MEMS package has a particle filter formed on the package substrate or the MEMS chip. The particle filter has a pierced-structure, which plural through holes are formed on a base surface by a regular arrangement. Further, in the particle filter, a plane-opening rate is set at least 45%, and a thickness-opening rate is set at least 50%.

MEMS package and method of manufacturing the same

A MEMS package has a MEMS chip, a package substrate, a dammed-seal part. The MEMS chip has an element substrate which a movable element is formed, the package substrate has a sound hole. The dammed-seal part has an annular dam-member which is formed on the element substrate so as to surround the movable element, and a gel member. The MEMS chip is mounted on the package substrate so that the movable element opposes to the sound hole. The gel member is formed by hardening of gel which is applied on the annular dam-member from outside so as to surround the annular dam-member.

A MEMS package has a MEMS chip, and a package substrate which the MEMS chip is adhered. The MEMS chip has an element substrate which a movable element is formed. The MEMS package has a plurality of bonding bumps adhered to both of an opposing surface, of the element substrate and the package substrate. The MEMS package has unevenly arranged structure which all the plurality of bonding bumps are unevenly arranged in a part of the opposing surface.

The electronic component module includes a substrate; an electronic component mounted on an electronic component mounting surface of the substrate; an insulating body that covers the electronic component on the electronic component mounting surface of the substrate; and a metal film formed by electroless plating, the metal film covering an exterior surface of the insulating body and a side surface of the substrate. The substrate has a space section in which a space is formed, the space being dented inward of the substrate in the periphery of a surface opposite to the electronic component mounting surface of the substrate, and the metal film entirely covers at least one side surface of the electronic component module except for at least a portion located on a surface perpendicular to the electronic component mounting surface of the substrate in the space section.

Electronic component module and its manufacturing method

A system and method are disclosed for a subambient pressure air bearing slider utilizing negative pressure grooves. In one embodiment, a groove extends from a slider's leading edge, splits, and terminates in two locations at the slider's trailing edge. In one embodiment, a groove is provided in a slider's compression pad near the trailing edge of the slider.

System and method for a subambient pressure air bearing slider utilizing negative pressure grooves

A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate () made of a semiconductor such as silicon (Si) and including iron (Fe) as a catalyst through the use of melting according to a modulated heat distribution (). The heat distribution () is formed, for example, through diffracting an energy beam () by a diffraction grating (). As a method of arranging the catalyst, for example, iron may be deposited in a planar shape or a projection shape in a position corresponding to the heat distribution (), or the deposited iron may be used as a master to be transferred to another substrate. A carbon nanotube is grown through the use of the arranged catalyst. The grown carbon nanotube can be used as a recording apparatus, a field electron emission device, an FED or the like.

Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing recording apparatus and recording apparatus, method of manufacturing field electron emission device and field electron emission device, and method of manufacturing display unit and display unit

A system and method are disclosed for using a test slider to test the resonance performance of a head gimbal assembly. The test slider has a two-stripe air-bearing surface to allow the test slider to glide above a surface and a block with a mass equal to the combined mass of the electrical slider and the micro-actuator. The leading edge of the slider is tapered and has a main air groove to facilitate gliding. A back step on the side of the test slider opposite the air bearing surface maintains a parallel gap between the slider and the suspension tongue of the head gimbal assembly.

Method and mechanism of the suspension resonance optimization for the hard disk driver

Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing field electron emission device and field electron emission device, and method of manufacturing display unit and display unit

A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube () having an outer semiconductive carbon nanotube layer () and an inner metallic carbon nanotube layer () that is partially covered by the outer semiconductive carbon nanotube layer (). A metal source electrode () and a metal drain electrode () are brought into contact with both ends of the semiconductive carbon nanotube layer () while a metal gate electrode () is brought into contact with the metallic carbon nanotube layer (). The space between the semiconductive carbon nanotube layer () and the metallic carbon nanotube layer () is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer () and the inner metallic carbon nanotube layer () are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube ().

Electronic device and method for producing the same

Electronic device and its manufacturing method

Growing community of inventors

Hong Kong, China

Masashi Shiraishi