Kabushiki Kaisha Toshiba

Tdk Corporation

Tokyo Shibaura Denki Kabushiki Kaisha

Kabuhsiki Kaisha Toshiba

Masashi Sahashi

Hitoshi Iwasaki

Yuzo Kamiguchi

Masatoshi Yoshikawa

Hiromi Fuke

Katsuhiko Koui

Susumu Hashimoto

Hiromi Yuasa

Hideaki Fukuzawa

Atsuhito Sawabe

Tadahiko Kobayashi

Hiroaki Yoda

Kazuhiro Saito

Yuichi Ohsawa

Masayuki Takagishi

Akiko Saito

Yoichi Tokai

Reiko Kondoh

Takeo Sakakubo

Hiroshi Tomita

Tomohiko Nagata

Koichiro Inomata

Yuuzo Kamiguchi

Michio Hasegawa

Tomomi Funayama

Tetsuhiko Mizoguchi

Shin-ichi Nakamura

Akihiko Tsutai

Katsuhiko Koi

Shinya Sakurada

Takahiro Hirai

Toshiro Sato

Tatsuo Shibata

Takao Sawa

Tomohisa Arai

Isao Sakai

Naoyuki Sori

Akio Hori

Tomokazu Domon

Tomohiro Nozaki

Akira Kikitsu

Tadashi Kai

Takashi Watanabe

Michiko Hara

Takashi Ishigami

Yuzo Hirayama

Junichi Akiyama

Koichi Terunuma

Jun Ito

Haruyuki Morita

Wu Mei

Mikio Matsuzaki

Masami Okamura

Michihiko Inaba

Taro Oike

Keisuke Hashimoto

Miki Mori

Noburu Fukushima

Shuichi Komatsu

Hisashi Yoshino

Takashi Yamanobe

Kazushi Tanimoto

Hiroaki Kawashima

Akiko Takahashi

Hiromi Niu

Hideo Nagai

Kazuaki Fukamichi

Hironori Fukuda

Tsutomu Yamashita

Toshiya Sakamoto

Naomi Fujioka

Hideki Yamamiya

Koichi Shinohara

Yoshitaka Yanagita

Nobuo Katsui

Yukiko Nishiyama

Masaaki Doi

Kousaku Miyake

Asaya Fujita

Yoshiaki Iijima

A magnetization control element according to an aspect of the invention includes a magnetization control layer containing a magnetoelectric material exhibiting a magnetoelectric effect, and a magnetic coupling layer that is magnetically coupled to a magnetization of a first surface of the magnetization control layer through exchange coupling and exhibits a magnetic state according to the magnetization of the first surface, wherein a magnetization having a component in a direction opposite to a direction of a magnetization of the magnetic coupling layer is imparted to the magnetization control layer.

Magnetization control element, magnetic memory, and magnetic recording system

A magnetization controlling element includes a ferromagnetic material layer, an exchange coupling adjustment layer, an antiferromagnetic material layer, an electrode layer, a magnetic field applying mechanism which applies a magnetic field to the antiferromagnetic material layer, and an electric field applying mechanism which applies an electric field to the antiferromagnetic material layer. The antiferromagnetic material layer contains an antiferromagnetic material or ferrimagnetic material having a magnetoelectric effect, the ferromagnetic material layer includes a perpendicular magnetization film having a magnetization component perpendicular to the film surface, the ferromagnetic material layer includes a ferromagnetic material layer that is magnetically connected, through exchange coupling, to the antiferromagnetic material layer. The exchange coupling adjustment layer has a function of adjusting exchange coupling between the ferromagnetic material layer and the antiferromagnetic material layer.

Magnetization controlling element using magnetoelectric effect

A magnetoresistance effect element having a magnetoresistance effect film and a pair of electrode, the magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction, a second magnetization layer whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic intermediate layer located between the first and second magnetic layers, and a film provided in the first magnetic layer, in the second magnetic layer, at an interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at an interface between the second magnetic layer and the nonmagnetic intermediate layer.

Tunnel barrier sensor with multilayer structure

A magnetic recording system including follows: a recording head, a recording medium that includes a first recording medium layer, a second recording medium layer, and a substrate. The magnetic recording system includes an electric field applying device applying an electric field and a magnetic field applying device applying a magnetic field to the recording medium, a movement mechanism that moves them to an arbitrary position. The magnetic recording system has a function of controlling an applying direction of at least one of the electric field applying device and the magnetic field applying device, and the recording head is arranged at a position facing the recording medium.

Magnetic recording system and magnetic recording device

There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen

A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic metal intermediate layer located between said pinned layer and said free layer. The element also includes a pair of electrodes electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. At least one of the pinned layer and the free layer may include a thin-film insertion layer. The nonmagnetic metal intermediate layer includes a resistance adjusting layer including at least one of oxides, nitrides and fluorides, and the thin-film insertion layer includes at least one element selected from the group consisting of iron (Fe), cobalt (Co) and nickel (Ni).

Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer

A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeCoNi(where a+b+c=100 at %, and a&#x2266;75 at %, b&#x2266;75 at %, and c&#x2266;63 at %), or formed of an alloy having a body-centered cubic crystal structure.

Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus

A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 10/cmis inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.

Magnetoresistive effect element with resistance adjustment layer of semimetal, magnetic head and magnetic reproducing apparatus

A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory

There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system

A magnetoresistance effect element, comprising a nonmagnetic spacer layer, first and second ferromagnetic layers separated by the nonmagnetic spacer layer, the first ferromagnetic layer having a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field, the magnetization of the first ferromagnetic layer freely rotating in a magnetic field signal, a magnetoresistance effect-improving layer comprising a plurality of metal films and disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic spacer layer and the magnetoresistance effect-improving layer, one of the plurality of metal films disposed in contact with the first ferromagnetic layer contains metal element of not solid solution with metal element of the first ferromagnetic layer and a nonmagnetic underlayer or a nonmagnetic protecting layer disposed in contact with the magnetoresistance effect-improving layer so that the magnetoresistance effect-improving layer is disposed between the first ferromagnetic layer and the nonmagnetic underlayer or the nonmagnetic protecting layer.

Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system

An example magnetoresistive effect element includes a magnetoresistive effect film including a magnetization pinned layer, a magnetization free layer, and an intermediate layer interposed therebetween and having a magnetic region and a nonmagnetic region whose electrical resistance is higher than the magnetic region. A sense current is passed to the magnetoresistive effect film in a direction substantially perpendicular to the film plane thereof. The magnetic region of the intermediate layer penetrates the nonmagnetic region locally and extends in the direction substantially perpendicular to the film plane. The nonmagnetic region contains a nonmagnetic metallic element having a larger surface energy than a magnetic metallic element contained in the magnetic region.

Magnetoresistive effect element and manufacturing method thereof, and magnetic head, magnetic reproducing apparatus, and magnetic memory using the same

Growing community of inventors

Kanagawa-ken, Japan

Masashi Sahashi