Renesas Technology Corp.

Hitachi, Ltd.

Hitachi Ulsi Systems Co., Ltd.

Other

Renesas Electronics Corporation

Hitachi Ulsi Engineering Corp.

Hitachi Microcomputer System, Ltd.

Masashi Sahara

Shinji Nishihara

Hideo Miura

Masayuki Suzuki

Takashi Nakajima

Tomio Iwasaki

Hiroyuki Uchiyama

Hiromi Abe

Shinichi Ishida

Hiroyuki Ohta

Kazuhisa Higuchi

Yoshio Fukayama

Taku Kanaoka

Koji Fujishima

Yutaro Ebata

Katsuhiko Hotta

Hideaki Tsugane

Ken Uchikoshi

Naokatsu Suwanai

Atsushi Tachigami

Kazuhiko Sato

Yoshiaki Yoshiura

Sonoko Tohda

Kentaro Yamada

Shuji Ikeda

Atushi Ogishima

Sonoko Abe

Hiromi Todorobaru

Takashi Hashimoto

Shoji Yoshida

Kozo Watanabe

Hiroshi Moriya

Shinichi Tanabe

Yuji Takahashi

Masaki Watanabe

Naotaka Tanaka

Hidenori Suzuki

Ryo Haruta

Masanori Kojima

Tomoo Matsuzawa

Katsuhiro Uchimura

Ken Okutani

Yasuyuki Nakajima

Shinichi Maeda

Naoki Kanda

Fumiaki Endo

Yoshinori Matsumuro

Yoshiaki Yamada

Masaki Sakashita

Hideaki Kanazawa

Masakazu Sugiura

A characteristic of a semiconductor device having a back electrode including an Au&#x2014;Sb alloy is improved. The semiconductor device has a semiconductor substrate and the back electrode including the Au&#x2014;Sb alloy layer. The back electrode is formed on the semiconductor substrate. The Sb concentration in the Au&#x2014;Sb alloy layer is equal to or greater than 15 wt %, and equal to or less than 37 wt %. The thickness of the Au&#x2014;Sb alloy layer is equal to or larger than 20 nm, and equal to or less than 45 nm.

Semiconductor device having a back electrode including Au-Sb alloy layer and method of manufacturing the same

A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.

Semiconductor device and a method of manufacturing the same

Semiconductor device with pads overlapping wiring layers including dummy wiring

A technology is provided where a high performance Schottky-barrier diode and other semiconductor elements can be formed in the same chip controlling the increase in the number of steps. After a silicon oxide film is deposited over a substrate where an n-channel type MISFET is formed and the silicon oxide film over a gate electrode and ntype semiconductor region is selectively removed, a Co film is deposited over the substrate and a CoSilayer is formed over the ntype semiconductor region and the gate electrode by applying a heat treatment to the substrate. After a silicon nitride film is deposited over the substrate and an aperture reaching the substrate is formed by removing the silicon nitride film and the silicon oxide film at the anode formation part of the Schottky barrier diode, a Ti film is deposited over the substrate including the inside of the aperture, and a TiSilayer which becomes an anode electrode of the Schottky-barrier diode is formed at the bottom of the aperture by applying a heat treatment to the substrate.

A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external terminals arranged in the peripheral region and formed over the first insulating film, a conductive guard ring formed over the first insulating film and provided around the external terminals, and second insulating films formed in the internal region and the peripheral region, the second insulating film in the peripheral region is formed over the first insulating film and over the guard ring and is contacting the external terminals, the second insulating films of the circuit region and that of the peripheral region are separately formed and are isolated from each other. Separate second insulating film may be formed over the wirings of one or more of existing wiring levels of the semiconductor device.

Semiconductor device with guard rings that are formed in each of the plural wiring layers

An insulating portion of the respective wiring layers for a semiconductor device is constituted of insulating films. The one insulating film is made of a material whose conductivity is higher than that of the other insulating film that is made of an ordinary silicon oxide film and is provided in contact with the wiring. An electric charge accumulated in the wiring generated in the course of manufacture of the semiconductor device is discharged through the one insulating film at a stage where a charge accumulation in the wiring is low. This permits the heat release value generated through the discharge to be suppressed to a low level, and the short-circuiting-failure between adjacent wirings to be suppressed or prevented.

There is provided a semiconductor device having a wiring structure which reduces possibility of a short circuit, and method of making the device. Besides, there is provided a semiconductor device having high reliability. Further, there is provided a semiconductor device having high yield. A wiring line is formed at one main surface side of a semiconductor substrate, and has a laminate structure of an adjacent conductor layer and a main wiring layer. The main wiring layer contains an added element to prevent migration. The adjacent conductor layer is formed of a material for preventing a main constituent element and the added element of the main wiring layer from diffusing into the substrate beneath the adjacent conductor layer, and the concentration of the added element at a location close to an interface between the adjacent conductor layer and the main wiring layer is low compared to the concentration of the added element in the main wiring layer spaced from the adjacent conductor layer.

Semiconductor device and method of manufacturing the same

An insulating portion of the respective wiring layers for a semiconductor device is constituted of insulating films. The one insulating film is made of a material whose conductivity is higher than that of the other insulating film that is made of an ordinary silicon oxide film and is provided in contact with the wiring. An electric charge accumulated in the wiring generated in the course of manufacture of the semiconductor device is discharged through the one insulating film at a stage where a charge accumulation in the wiring is low. This permits the heat release value generated through the discharge can be suppressed to a low level, and the short-circuiting failure between adjacent wirings can be suppressed or prevented.

Method of manufacturing a semiconductor device having a multi-layered wiring structure

In a high-performance semiconductor integrated circuit, the standby current is reduced by preventing current leakage in a semiconductor integrated circuit device, for example, the memory cell of an SRAM. A gate electrode G is formed on semiconductor substrateand n-type semiconductor regions(source/drain regions) are formed in the semiconductor substrate on both sides of this gate electrode. Within the same apparatus and under near-vacuum conditions, a depth of 2.5 nm or less is etched away from the surfaces of the source/drain regions and gate electrode, a film of Co is then formed on the source/drain regions, and thermal processing is applied to form CoSilayer. As a result, current leakage in the memory cell can be prevented and this method can be applied to semiconductor integrated circuit devices that have low current consumption or are battery-driven.

Semiconductor integrated circuit device and the process of the same

Growing community of inventors

Hitachinaka, Japan

Masashi Sahara