Renesas Technology Corp.

Hitachi, Ltd.

Other

Akita Electronics Co., Ltd.

Akita Electronics Systems Co., Ltd.

Eastern Japan Semiconductor Technologies, Inc.

Masashi Maruyama

Satoshi Arai

Hitoshi Akamine

Tomio Furuya

Nobuhiro Matsudaira

Tsuyoshi Shibuya

Yasushi Ohyama

Hitoshi Sekiguchi

Tetsuaki Adachi

Kyoichi Takahashi

Shinji Yamada

Masashi Suzuki

Susumu Takada

Takahiro Sato

Sakae Kikuchi

Shinji Moriyama

Tsutomu Kobori

Yoshihiko Kobayashi

Susumu Sato

Seikou Ono

Toshihiko Kyogoku

Akio Ishidu

Iwamichi Kojiro

Tadashi Kodu

Kiyoharu Mochiduki

A high frequency power amplifying device has two amplifying lines. Each amplifying line has a configuration in which a plurality of amplifying stages are connected in cascade having two source voltage terminals, of which one is connected to the first amplifying stage of one amplifying line and to the remaining amplifying stages of the other amplifying line, and the other, to the first amplifying stage of the latter amplifying line and to the remaining amplifying stages of the former amplifying line. An air core coil with a low D.C. resistance, formed by spirally winding a copper wire of about 0.1 mm in diameter, is connected in series between the final amplifying stage of each amplifying line and the source voltage terminal.

Semiconductor device, and method and apparatus for manufacturing semiconductor device

In a radio communication system, an electronic component for high frequency power amplifier carries out the detection of output level, required for feedback control of the output power of a high frequency power amplification circuit, by current detection. The electronic component has an error amplifier. The error amplifier compares an output level detection signal with an output level instruction signal, and generates a signal for controlling the gain of the high frequency power amplification circuit according to the difference between them. For the error amplifier, a low-pass amplification circuit is used. The amplification circuit is provided with, between its output terminal and its inverting input terminal, a phase compensation circuit. The phase compensation circuit comprises a resistance element, and another resistance element and a capacitive element in series connected in parallel with the resistance element.

Semiconductor integrated circuit for high frequency power amplifier, electronic component for high frequency power amplifier, and radio communication system

The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.

High frequency power amplifier and wireless communication module

The present invention provides a high frequency power amplification circuit capable of preventing an output power and current consumption from being largely changed even when a load fluctuates in a wireless communication system for detecting an output level necessary for feedback control by a current detecting method. In a high frequency power amplification circuit as a component of a wireless communication system which detects an output level necessary for feedback control by a current detecting method, a capacitive element is interposed between the drain terminal of a power amplification transistor in the final stage and the gate terminal of a transistor constructing a current mirror circuit in a circuit for detecting an output level, and a change in an output power accompanying load fluctuation is reflected in a detection current of the output level detecting circuit.

High frequency power amplification electric part and wireless communication system

The number of components of a high frequency power amplifier is reduced. A bias resistance ratio is adjusted in accordance with a change in the threshold voltage Vth of a transistor. A high frequency power amplifier has a plurality of amplifying systems. Each of these systems has an input terminal to which a signal to be amplified is supplied, an output terminal, a bias terminal, a plurality of amplifying stages which are sequentially cascaded between the input and output terminals, and a bias circuit connected to the bias terminal and each of the amplifying stages to apply a bias potential to the amplifying stage. The amplifying stage includes a control terminal for receiving an input signal and the bias potential supplied to the stage and a first terminal for transmitting an output signal of the stage.

High frequency power amplifier module and wireless communication apparatus

Disclosed herein is a high frequency power amplifier system having a transistor comprised of a first electrode, a second electrode and a control electrode and for controlling current which flows between the first electrode and the second electrode by applying a potential to the control electrode, and a resistance type potential divider circuit for determining a dc bias potential applied to the control electrode of the transistor, and wherein an input signal is inputted to the control electrode, an output signal is outputted from the first electrode and a control signal is inputted to the resistance type potential divider circuit. One resistor of the resistance type potential divider circuit is comprised of a temperature compensating resistor whose resistance value varies linearly, so that a temperature characteristic of an idle current defined as an output when the control signal is not inputted, assumes a negative temperature characteristic.

High frequency power amplifier system and wireless communication system

Growing community of inventors

Komoro, Japan

Masashi Maruyama