Jsw Aktina System Co., Ltd.

The Japan Steel Works, Ltd.

Fuji Electric Co., Ltd.

Masashi Machida

Suk-Hwan Chung

Daisuke Ito

Michihiko Tsuruoka

Ryo Shimizu

Hiroaki Imamura

Tatsuro Matsushima

Naoyuki Kobayashi

Tamotsu Odajima

Ryosuke Sato

Wataru Nakagawa

Mutsumi Nagumo

Junichi Shida

Kenichi Ohmori

Naohiro Kounosu

A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus () according to an embodiment includes a laser light source () configured to irradiate a semiconductor film (M) with a laser beam, a film state measuring instrument () configured to measure a state of the semiconductor film after the semiconductor film (M) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M) measured by the film state measuring instrument ().

Laser processing apparatus, laser processing method, and method for manufacturing semiconductor apparatus

Quality of a crystalline film is improved. In a method for manufacturing a panel, a polysilicon film is formed by emission of laser light to an amorphous silicon filmA through a light-transmittable memberthat can transmit the laser light.

Method for manufacturing panel using a glass substrate as the laser light transmitting member and laser processing apparatus

A laser processing apparatus includes: a scan moving unit which moves one or both of a workpiece and a laser beam; a laser beam irradiation unit which irradiates the workpiece with the laser beam; and a gas discharge unit which discharges at least a first gas to an irradiation area irradiated with the laser beam in the workpiece. The gas discharge unit has a rectifying surface at a position facing the workpiece during laser beam irradiation. The rectifying surface is provided with a first gas discharge port through which the first gas is discharged; and one or both of a second gas discharge port and a gas front-back suction port. The second gas discharge port discharges a second gas to the workpiece during laser beam irradiation on both outer sides of the first gas discharge port at least in the scanning direction.

Laser processing apparatus and laser processing method

A laser irradiation apparatus () according to an embodiment includes an optical-system module () configured to apply laser light (L) to an object to be irradiated, a shield plate () in which a slit () is formed, through which the laser light (L) passes, and a reflected-light receiving component () disposed between the optical-system module () and the shield plate (), in which the reflected-light receiving component () is able to receive, out of the laser light (L), reflected light (R) reflected by the shield plate ().

Laser irradiation apparatus and method for manufacturing semiconductor device

A laser processing apparatus includes: a laser light source that generates a laser beam; a first beam splitter on which the laser beam is incident; a second beam splitter on which the laser beam having passed through the first beam splitter is incident; and a homogenizer that controls an energy density of the laser beam emitted from the second beam splitter. The laser beam output from the homogenizer includes a p-polarized component and an s-polarized component, and a ratio of energy intensity of the p-polarized component to the s-polarized component is preferably not lower than 0.74 and not higher than 1.23 on a surface of the workpiece.

Laser processing apparatus, semiconductor device manufacturing method, and amorphous silicon crystallization method

A laser annealing apparatus () according to the embodiment includes: a laser beam source () configured to emit a laser beam (L) to crystallize an amorphous silicon film () on a substrate () and to form a poly-silicon film (); a projection lens () configured to condense the laser beam to irradiate a silicon film (); a probe beam source configured to emit a probe beam (L); a photodetector () configured to detect the probe beam (L) transmitted through the silicon film (); a processing apparatus () configured to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation.

Laser annealing apparatus, inspection method of substrate with crystallized film, and manufacturing method of semiconductor device

Provided is a laser annealing treatment including a laser light source that outputs pulse laser light, an optical system that shapes the pulse laser light, and leads the shaped pulse laser light to a semiconductor film subject to treatment, and a stage that carries the semiconductor film to be irradiated by the pulse laser light, wherein the pulse laser light irradiating the semiconductor film presents a rising time equal to or less than 35 nanoseconds from 10% of the maximum height to the maximum height in the pulse energy density, and a falling time equal to or more than 80 nanoseconds from the maximum height to 10% of the maximum height, thereby increasing, while an energy density suitable for crystallization and the like is not particularly increased, a margin quantity thereof, and carrying out high quality annealing treatment without decreasing a throughput.

Laser annealing treatment apparatus and laser annealing treatment method

The apparatus of the present invention detects the resonant frequency of a vibratory member in contact with the fluid in order to determine the density or pressure of the fluid. The vibratory member is disposed in a housing to form a cavity with no flow communication between the side of the vibratory member facing into the cavity and the other side of the vibratory member. The vibratory member is vibrated by an annular piezoelectric device which may be attached to one or both sides of the vibratory member. An amplifier and feedback circuit regulate the frequency of oscillation of the piezoelectric device to that of the resonant frequency. The piezoelectric device may be comprised of several separate sections or several sections with partial interruptions in the piezoelectric material. Instead of the vibratory member and the piezoelectric transducer combination, the vibratory member may be constructed from a single fixed piezoelectric device with another piezoelectric disc mounted thereon. In this configuration one of the devices is used to mechanically excite the other and through a feedback circuit establish the resonant frequency of the two laminated piezoelectric devices.

Vibration type transducer

A Karman vortex flow meter including an upstream columnar body having a substantially isosceles triangular cross section and a downstream columnar body having a substantially isosceles trapezoidal cross section. The downstream columnar body has a base surface which is substantially equal in width to the base surface of the upstream columnar body. The two bodies are positioned in a stream of a fluid with their base surfaces disposed at a distance from each other in mutually parallel relation and at right angles to the stream for generating Karman vortices to measure the flowing speed or rate of the fluid based on the frequency of the vortices. The upstream columnar body has a pair of rounded edges along its base surface.

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Yokohama, Japan

Masashi Machida