Murata Manufacturing Co., Ltd.

Masashi Kubota

Masaki Takeuchi

Korekiyo Ito

Yoshimitsu Ushimi

Tetsuzo Hara

Ville Kaajakari

A magneto-resistive element includes a first element section including a first unit element and a second element section including a second unit element. The first element section is connected to the second element section in series. The first unit element includes a first reference layer with a magnetization that is fixed in an in-plane direction, and a first free layer including a vortex magnetization. The second unit element includes a second reference layer with a magnetization that is fixed in an in-plane direction, and a second free layer including a vortex magnetization. A direction of the fixed magnetization of the first reference layer is opposite to that of the second reference layer.

Magneto-resistive element and magnetic sensor

A sensor includes a film portion deformable by external force, a support body supporting the film portion, and a magnetoresistive element portion on the film portion and including a unit element that includes a first magnetic layer whose magnetization direction changes in accordance with deformation of the film portion, a second magnetic layer whose magnetization direction is fixed, and an intermediate layer between the first and second magnetic layers. The film portion includes a first side portion in a portion of an outer edge of the film portion. A slit portion is provided in the film portion and includes at least a portion along the first side portion, so that the film portion includes a connection portion in which the first side portion is partially connected to the support body. A magnetoresistive element portion is provided in the connection portion.

Sensor, strain detection sensor, pressure sensor, and microphone

A magnetic sensor chip includes a substrate including a first main surface, and a magnetoresistive element having a magnetosensitive direction parallel or substantially parallel to the first main surface. The magnetoresistive element includes a reference layer, an intermediate layer, and a free layer stacked in a stacking direction perpendicular or substantially perpendicular to the first main surface. A direction of magnetic anisotropy of the free layer where no external magnetic field acts on the magnetic sensor chip is parallel or substantially parallel to the stacking direction and perpendicular or substantially perpendicular to the magnetosensitive direction. When a stress acts on the substrate predominantly in a first direction parallel or substantially parallel to the first main surface, a direction of stress-induced magnetic anisotropy in the free layer is perpendicular or substantially perpendicular to the magnetosensitive direction and the stacking direction.

Magnetic sensor chip and magnetic sensor device

A magnetic sensor includes an angle sensor including first magnetoresistive elements and producing an output based on an angle between a direction of an external magnetic field and a reference direction, and a magnetic field strength sensor including second magnetoresistive elements and producing an output based on a strength of the external magnetic field. The angle sensor and the magnetic field strength sensor have a same or substantially a same direction of normal to a reference surface for sensor formation. The magnetic field strength sensor has different output characteristics in accordance with the angle between the direction of the external magnetic field and the reference direction. Based on the angle between the direction of the external magnetic field and the reference direction detected by the angle sensor and the output from the magnetic field strength sensor, the strength of the external magnetic field is determined.

Magnetic sensor, magnetic sensor array, magnetic field distribution measurement device, and position identification device

A magnetic sensor includes a substrate, and a magneto-resistive element portion which is provided on the substrate and has a predetermined magneto-sensitive direction, and in which a bias magnetic field is applied in a direction orthogonal or substantially orthogonal to the magneto-sensitive direction. The magneto-resistive element portion includes a magnetic layer having a negative magneto-striction constant, and stress-induced anisotropy of the magnetic layer develops in a direction parallel or substantially parallel to the direction of the bias magnetic field in response to a tensile stress act on the substrate in a direction parallel or substantially parallel to the magneto-sensitive direction.

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Nagaokakyo, Japan

Masashi Kubota