Rohm Co., Ltd.

Masashi Kubota

Taketoshi Tanaka

Kuniyoshi Okamoto

A nitride semiconductor laser diode has a quantum well layer consisting of a mixed crystal of AlInGaN (x1&#x2267;0.5, y1&#x2267;0 and 1&#x2212;x1&#x2212;y1&#x2266;0.5) in a group III nitride semiconductor multilayer structure having a major growth surface defined by a nonpolar plane. A cavity direction of the laser diode is perpendicular to a c-axis. The major growth surface of the group III nitride semiconductor multilayer structure may be defined by an m-plane. In this case, the cavity direction may be along an a-axis.

Nitride semiconductor laser diode

A semiconductor laser device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane. The semiconductor laser device includes a cavity having an active layer containing In and distributed Bragg reflectors coating both cavity end faces of the cavity respectively. In each of the distributed Bragg reflectors, a central wavelength &#x3bb;of a reflectance spectrum satisfies the relation &#x3bb;&#x2212;10 nm&#x2266;&#x3bb;&#x2266;&#x3bb;+10 nm with respect to an emission peak wavelength &#x3bb;of spontaneous emission in the active layer.

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Kyoto, Japan

Masashi Kubota