Renesas Technology Corp.

Renesas Electronics America Inc.

Upi Semiconductor Corporation

Masashi Koyano

Nobuyoshi Matsuura

Kozo Sakamoto

Kyouichi Takagawa

Ryotaro Kudo

Tetsuo Sato

Masamichi Yanagida

Jim Comstock

Hiroki Arai

The present invention provides a semiconductor device that can achieve miniaturization or thinning of the size of the package while maintaining the characteristic of the MOSFET and reducing the on-resistance value, and a portable apparatus using the same. The gate electrodesandof the semiconductor chipare disposed in the vicinity of the two side surfaces of the longitudinal direction (the x axis direction on the page) of the package, and the gate terminalandthat is mounted with the gate electrodesandin a flip-chip manner are extended in the longitudinal direction of the packageand are derived to the outside from the two side surfacesA andB. Based on the configuration, it is capable of maximizing the size of the semiconductor chip with respect to the size of the package, and it is able to realize the high performance of the element characteristic for the module.

Semiconductor device and portable apparatus using the same

According to an embodiment of the invention, an apparatus includes a microprocessor-based pulse-width modulation controller configured to generate a pulse-width modulation signal, and a synchronous converter including a first transistor, a second transistor, a first driver, and a second driver. The apparatus further includes a drive voltage generator configured to generate a drive voltage for the synchronous converter. The drive voltage generator is further configured to generate the drive voltage based on a measured output current and a measured input voltage.

Intelligent gate drive voltage generator

Disclosed is a technique capable of improving a power supply efficiency in a power supply circuit. A power MOSFET in a high side of a combined power MOSFET constituting a DC-DC converter is constituted of a horizontal MOSFET, and a power MOSFET in a low side thereof is constituted of a vertical MOSFET.

Semiconductor device

Growing community of inventors

Takasaki, Japan

Masashi Koyano