Nihon Shinku Gijutsu Kabushiki Kaisha

Ulvac, Inc.

Mamoru Baba

Masashi Kikuchi

Atsushi Nakatsuka

Isao Tada

Takayoshi Hirono

Kazuya Saito

Hiroaki Kawamura

Hideyuki Ogata

Rongbin Ye

Masatoshi Sato

Masaki Uematsu

Richard L Bersin

Tokuo Watanabe

Toshinari Takata

A method for manufacturing an all solid-state lithium-ion rechargeable battery includes forming a first active material layer on a base, forming a solid electrolyte layer connected to the first active material layer, forming a second active material layer connected to the solid electrolyte layer, and repairing a short-circuit defect produced between the first active material layer and the second active material layer by supplying a repair current between the first active material layer and the second active material layer.

Method for manufacturing all solid-state lithium-ion rechargeable battery, and method for testing all solid-state lithium-ion rechargeable battery

The object of this invention is to provide a winding type plasma CVD apparatus in which quality of a layer can be made uniform by supplying a reaction gas uniformly to a deposition area of a film, and can perform a self-cleaning process of a deposition portion in the path of deposition onto the film. A film () is supported between a pair of movable rollers () arranged on the upstream side and downstream side of the deposition portion () with regard to the traveling direction of the film, and then the film () is made to travel substantially linearly at the deposition position. Consequently, the distance between a shower plate () and the film () is kept constant, and the quality of the layer is made homogeneous. The film is heated by means of a metal belt () traveling simultaneously on the back side of the film. The moveable rollers () ascend from the deposition position to the self-cleaning position, and the film () can be separated from the shower plate (). Self-cleaning can be carried out in the path of the deposition onto the film by closing the aperture of a mask () with a shutter (), thereby preventing leakage of cleaning gas.

Winding type plasma CVD apparatus

A plasma ashing apparatus has a vacuum treatment chamber for receiving therein a substrate coated with a resist film, a reactive gas introduction pipe equipped with a plasma applicator, a vacuum exhaust pipe, a heating means for heating the substrate, and two pieces of electrodes disposed in parallel to each other. One of the electrodes is a substrate electrode and the other thereof is a circular counter electrode. These two electrodes are commonly connected to an RF power source to thereby constitute a cathode electrode. Multiple concentric perforations are formed in the counter electrode except for a rib portion. A central perforation is formed in the center of the counter electrode. The concentric perforations are formed at every distance, from the center, equivalent to a diameter of the central perforation, while leaving circular electrode surfaces corresponding in width to a radius of of the perforation.

Plasma ashing apparatus

In a method for plasma ashing a resist film coated on a substrate, the temperature of the substrate is controlled initially at temperatures below that at which explosion of the resist film occurs until a surface portion of a resist film has been removed. Thereafter, the substrate temperature is increased to remove the remaining portions of the resist film. An apparatus for conducting the method includes a plurality of supports, which may be movably disposed within a vacuum treatment chamber for moving the substrate away from a source of heat and for moving the substrate into contact with the heating source.

Plasma ashing method and apparatus therefor

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Chigasaki, Japan

Masashi Kikuchi