Riken Corporation

Other

Japan Science and Technology Agency

National Institute of Advanced Industrial Science and Technology

Japan Science and Technology Corporation

Rohm Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Tohoku University

Merck Sharp & Dohme Corporation

Tokyo Institute of Technology

National Institute for Materials Science

Fuji Electric Corporate Research & Development, Ltd.

Semiconductor Energy Laboratory Co., Ltd.

Bridgestone Corporation

Banyu Pharmaceutical Co. Ltd

Masashi Kawasaki

Yoshinori Tokura

Hideomi Koinuma

Yoshio Kaneko

Hideo Ohno

Naoto Nagaosa

Wataru Koshibae

Junichi Iwasaki

Akira Ohtomo

Shunsuke Akasaka

Atsushi Tsukazaki

Ken Nakahara

Yoshinori Konishi

Hiroyuki Yamada

Toshinori Sugihara

Akihito Sawa

Kentaro Tamura

Shouichi Hiraga

Hiroyuki Yuji

Yoshiyuki Yonezawa

Toyohiro Chikyow

Kazuo Fueki

Tomoteru Fukumura

Masao Nakamura

Takeshi Fujii

Yoshihiro Ogawa

Asayuki Kamatani

Kazuhiko Omote

Tetsuo Kikuchi

Takeshi Hara

Hisao Ochi

Yuji Matsumoto

David M Tschaen

Toshihiro Sakamoto

Takashi Manako

Kota Terai

Shinji Kato

Yosuke Iwasaki

Steven A Weissman

Toshiaki Mase

Kazuki Kobayashi

Fumio Nakano

Masao Urayama

Taketo Ikeno

Fuyuki Yamamoto

Ikuo Sakono

Yaling Wang

Takehiko Iida

Kei-Ichiro Kobayashi

Yoshichika Otani

Hiroshi Sato

Sachin Lohani

Arlene E McKeown

Tatsuya Fujita

Hiroshi Akoh

Hiroto Yoshioka

Keita Ohtani

Hisaki Kojima

Shunroh Nagata

Jobu Matsuno

Masatomo Sumiya

Atsushi Akao

Shuntaro Furukawa

Masayuki Hagiwara

Masataka Mogi

Makoto Izumi

Wataru Minagawa

Yusaburo Segawa

Naotaka Sawada

Takashi Yasuda

Takuzo Yonezawa

Kazuhiro Takahashi

Tomoyuki Yokouchi

Maximilian Anton Hirschberger

Hiroo Mizuno

Kimimasa Suzuki

Yuji Ishii

Takahiro Morimoto

Ryutaro Yoshimi

Yoo Young Zo

In order to obtain an inductor element advantageous for miniaturization, an inductor elementaccording to an embodiment of the present disclosure is provided with a metal mediumin which ordered spins are spatially arranged so as to have a non-collinear spin structure when traced in a certain direction. In the inductor element, an electric current I is applied through the metal medium so as to have a projective component of the direction. Preferable examples of the non-collinear spin structure for the metal medium include a spiral structure and a cycloidal structure.

Inductor element and apparatus including same

A photoelectric conversion device includes a photoelectric conversion element formed of a polar material and including no p-n junction, and first and second electrodes provided on the photoelectric conversion element and arranged at an interval. Space-inversion symmetry of a structure of the photoelectric conversion element is broken. The first and second electrodes are each formed of a metal material that generates no substantial potential barrier preventing majority carriers for the photoelectric conversion element from moving from the electrode to the photoelectric conversion element. Light incidence on the photoelectric conversion element without voltage application between the first and second electrodes causes electromotive force to be generated between first and second electrodes, and enables electric current to be continuously taken out from the first and second electrodes.

Photoelectric conversion device, photosensor, power generation device, and photoelectric conversion method

An electronic device is provided, including: a first drive electrode; a second drive electrode that is spaced apart from the first drive electrode; and a topological insulator that contacts both of the first drive electrode and the second drive electrode and has magnetism, wherein the topological insulator includes a first region having a first coercivity and a second region having a second coercivity that is different from the first coercivity. A fabrication method of a topological insulator is also provided, including: preparing a topological insulator having magnetism and a first coercivity; and forming a second region having a second coercivity that is different from the first coercivity by irradiating a partial region of the topological insulator with ions.

Electronic device, topological insulator, fabrication method of topological insulator and memory device

Provided is a magnetic element which can generate a skyrmion by a stacked film including a magnetic layer and a non-magnetic layer, and a skyrmion memory to which the magnetic element is applied and the like. Provided is a magnetic element for generating a skyrmion, the magnetic element comprising a two-dimensional stacked film, wherein the two-dimensional stacked film is at least one or more multiple layered films including a magnetic film and a non-magnetic film stacked on the magnetic film. Also, provided is a skyrmion memory including a plurality of the magnetic elements stacked in a thickness direction.

Magnetic element, skyrmion memory, solid-state electronic device, data-storage device, data processing and communication device

A magnetic element capable of generating and erasing a skyrmion, including a magnet shaped as a thin layer and including a structure surrounded by a nonmagnetic material; a current path provided surrounding an end region including an end portion of the magnet, on one surface of the magnet; and a skyrmion sensor that detects the generation and erasing of the skyrmion. With Wm being width of the magnet and hm being height of the magnet, a size of the magnet, with the skyrmion of a diameter &#x3bb; being generated, is such that 2&#x3bb;&#x3e;Wm&#x3e;&#x3bb;/2 and 2&#x3bb;&#x3e;hm&#x3e;&#x3bb;/2. With W being width of the end region in a direction parallel to the end portion of the magnet and h being height of the end region in a direction perpendicular to the end portion of the magnet, the end region is such that &#x3bb;&#x2265;W&#x3e;&#x3bb;/4 and 2&#x3bb;&#x3e;h&#x3e;&#x3bb;/2.

Magnetic element, skyrmion memory, skyrmion memory-device, solid-state electronic device, data-storage device, data processing and communication device

Provided is a magnetic element capable of generating one skyrmion and erasing the one skyrmion. The magnetic element includes a magnet shaped like a substantially rectangular flat plate, an upstream electrode connected to the magnet in a width Wm direction of the magnet and made of a non-magnetic metal, a downstream electrode connected to the magnet in the width Wm direction to oppose the upstream electrode and made of a non-magnetic metal, and a skyrmion sensor configured to detect the skyrmion. Here, a width Wm of the substantially rectangular magnet is such that 3&#xb7;&#x3bb;&#x3e;Wm&#x2265;&#x3bb;, where &#x3bb; denotes a diameter of the skyrmion, a length Hm of the substantially rectangular magnet is such that 2&#xb7;&#x3bb;&#x3e;Hm&#x2265;&#x3bb;, and the magnet has a notch structure at the edge between the upstream electrode and the downstream electrode.

Magnetic element, skyrmion memory, skyrmion memory device, skyrmion-memory embedded solid-state electronic device, data storage apparatus, data processing and communication apparatus

To provide a magnetic element capable of performing skyrmion transfer, a skyrmion memory to which this magnetic element is applied, and a shift register, for example, a magnetic element capable of performing skyrmion transfer is provided, the magnetic element providing a transverse transfer arrangement in which the skyrmion is transferred substantially perpendicular to a current between an upstream electrode and a downstream electrode, and including a plurality of stable positions in which the skyrmion exists more stably than in other regions of a magnet, and a skyrmion sensor that detects a position of the skyrmion.

A magnetic storage media which has an endurance (durability) characteristics close to an infinite number of writing times of data and a data retention (holding) characteristics close to permanency, and is ultra-high-speed writable and erasable, and a data storage device and an image storage device which apply this magnetic storage media are provided. A magnetic storage media includes a thin layer magnet and a magnetic field generating unit arranged facing a surface of the magnet, and is capable of creating or eliminating a skyrmion by applying heat energy to another surface of the magnet positioned on the opposite side of the surface of the magnet, and a skyrmion memory includes the magnetic storage media.

Magnetic storage media and data storage device

Provided is a skyrmion memory circuit capable of circularly transferring a magnetic element skyrmion, comprising one or more current paths in a magnet having a closed-path pattern that are provided surrounding an end region including an end portion of the magnet in a plane of the magnet with the closed-path pattern, and applying current between an outer terminal connected to an outer circumferential portion of the closed-path pattern and an inner circumference electrode connected to an inner circumferential portion of the closed-path pattern, transferring the skyrmion in a direction substantially perpendicular to the direction of the applied current, and circulating the skyrmion in the magnet with the closed-path pattern.

Magnetic element, skyrmion memory, solid-state electronic device data recording apparatus, data processing apparatus, and communication apparatus

A ZnO-based semiconductor device includes an n type ZnO-based semiconductor layer, an aluminum oxide film formed on the n type ZnO-based semiconductor layer, and a palladium layer formed on the aluminum oxide film. With this configuration, the n type ZnO-based semiconductor layer and the palladium layer form a Schottky barrier structure.

ZnO-based semiconductor device and manufacturing method thereof

The present invention relates to a process for producing a hydrate of 3-(2,6-dichlorophenyl)-4-imino-7-[(2'-methyl-2&#x2032;,3&#x2032;-dihydro-1&#x2032;H-spiro[cyclopropane-1,4&#x2032;-isoquinolin]-7&#x2032;-yl)amino]-3,4-dihydropyrimido[4,5-d]pyrimidin-2(1H)-one (Compound A) or of a pharmaceutically acceptable salt of Compound A and a crystalline form of Compound A or of a pharmaceutically acceptable salt of Compound A, which are useful in the field of treatment of various cancers as a kinase inhibitor, especially as a Weel kinase inhibitor.

Process for producing bicycloaniline derivatives

A p-type MgZnO-based thin film () is formed on a substrate () made of a ZnO-based semiconductor. The p-type MgZnO-based thin film () is composed so that X as a ratio of Mg with respect to Zn therein can be 0&#x2266;X&#x3c;1, preferably 0&#x2266;X&#x2266;0.5. In the p-type MgZnO thin film (), nitrogen as p-type impurities which become an acceptor is contained at a concentration of approximately 5.0&#xd7;10cmor more. The p-type MgZnO thin film () is composed so that n-type impurities made of a group IV element such as silicon that becomes a donor can have a concentration of approximately 1.0&#xd7;10cmor less. The p-type MgZnO thin film () is composed so that n-type impurities made of a group III element such as boron and aluminum which become a donor can have a concentration of approximately 1.0&#xd7;10cmor less.

p-Type MgZnO-based thin film and semiconductor light emitting device

Provided are a ZnO-based thin film and a ZnO-based semiconductor device which allow: reduction in a burden on a manufacturing apparatus; improvement of controllability and reproducibility of doping; and obtaining p-type conduction without changing a crystalline structure. In order to be formed into a p-type ZnO-based thin film, a ZnO-based thin film is formed by employing as a basic structure a superlattice structure of a MgZnO/ZnO super lattice layer. This superlattice component is formed with a laminated structure which includes acceptor-doped MgZnO layersand acceptor-doped ZnO layers. Hence, it is possible to improve controllability and reproducibility of the doping, and to prevent a change in a crystalline structure due to a doping material.

ZnO-based thin film and ZnO-based semiconductor element

Provided is a method of evaluating properties of ferrite which can continuously measure change in magnetic properties accompanying change in composition of the ferrite merely by preparing one specimen. A composition gradient ferrite thin film constituted of a plurality of composition gradient ferrite layers which are formed by inclining component composition in the horizontal direction is formed on a single crystal substrate having light transmitting property using a thin film forming method, and a magneto-optical effect is continuously measured along the composition gradient direction of the ferrite thin film whereby change in magnetic properties accompanying a change in composition of the ferrite is continuously measured also provided is a method of evaluating properties of ferrite which can continuously measure change in magnetic properties accompanying change in composition of the ferrite merely by preparing one specimen.

Ferrite material having composition gradient for measuring magneto-optical-effect properties and method for evaluating properties of ferrite

The present invention relates to the crystalline forms of 2-allyl-1-[6-(I-hydroxy-1 methylethyl)pyridin-2-yl]-6-{[4-(4-methylpiperazin-1-yl)phenyl]amino}-1,2-dihydro-3H-pyrazolo[3,4-d]pyrimidin-3-one or a salt thereof, which are useful in the field of treatment of various cancers as a kinase inhibitor, especially as a Weel kinase inhibitor. 

Crystalline forms of dihydropyrazolopyrimidinone

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Sendai, Japan

Masashi Kawasaki