Idemitsu Kosan Company, Limited

Masashi Kasami

Koki Yano

Kazuyoshi Inoue

Hirokazu Kawashima

Shigekazu Tomai

Futoshi Utsuno

Masayuki Itose

Mami Nishimura

Kota Terai

Misa Sunagawa

Kenji Goto

Katsunori Honda

To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide.

Thin film transistor having crystalline indium oxide semiconductor film

A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X,

[object Object]

A sputtering target including an oxide A and InGaZnO, the oxide A having a diffraction peak in regions A to K at 2&#x3b8;=7.0&#xb0; to 8.4&#xb0;, 30.6&#xb0; to 32.0&#xb0;, 33.8&#xb0; to 35.8&#xb0;, 53.5&#xb0; to 56.5&#xb0;, 56.5&#xb0; to 59.5&#xb0;, 14.8&#xb0; to 16.2&#xb0;, 22.3&#xb0; to 24.3&#xb0;, 32.2&#xb0; to 34.2&#xb0;, 43.1&#xb0; to 46.1&#xb0;, 46.2&#xb0; to 49.2&#xb0;, and 62.7&#xb0; to 66.7&#xb0;.

In&#x2014;Ga&#x2014;Zn oxide sputtering target and method for producing same

An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio 'Ga/(Ga+In)' of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an InObixbyite structure.

Oxide sintered body and sputtering target

A thin film transistor including an active layer, and has a field-effect mobility of 25 cm/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58&#x2266;In/(In+Ga+Zn)&#x2266;0.68 and 0.15&#x3c;Ga/(In+Ga+Zn)&#x2266;0.29, the region 2 being defined by 0.45&#x2266;In/(In+Ga+Zn)&#x3c;0.58 and 0.09&#x2266;Ga/(In+Ga+Zn)&#x3c;0.20, and the region 3 being defined by 0.45&#x2266;In/(In+Ga+Zn)&#x3c;0.58 and 0.20&#x2266;Ga/(In+Ga+Zn)&#x2266;0.27.

Sputtering target comprising an oxide sintered body comprising In, Ga, and Zn

An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3):0.10&#x2266;In/(In+Ga+Sn)&#x2266;0.60&#x2003;&#x2003;(1)0.10&#x2266;Ga/(In+Ga+Sn)&#x2266;0.55&#x2003;&#x2003;(2)0.0001&#x3c;Sn/(In+Ga+Sn)&#x2266;0.60&#x2003;&#x2003;(3).

In-Ga-Sn oxide sinter, target, oxide semiconductor film, and semiconductor element

A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3):In/(In+Zn)=0.2 to 0.8 &#x2003;&#x2003;(1)In/(In+Ga)=0.59 to 0.99 &#x2003;&#x2003;(2)Zn/(Ga+Zn)=0.29 to 0.99 &#x2003;&#x2003;(3).

Field effect transistor using oxide semiconductor and method for manufacturing the same

A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3):In/(In+Zn)=0.2 to 0.8&#x2003;&#x2003;(1)In/(In+X)=0.29 to 0.99&#x2003;&#x2003;(2)Zn/(X+Zn)=0.29 to 0.99&#x2003;&#x2003;(3).

Oxide semiconductor field effect transistor and method for manufacturing the same

A semiconductor device, a thin film transistor, and a method for producing the same capable of decreasing the management cost, and capable of decreasing the production steps to reduce the production cost are proposed. A method for producing a thin film transistorprovided with a semiconductor which is composed of a prescribed material and serves as an active layerand a conductor which is composed of a material having the same composition as that of the prescribed material and serves as at least one of a source electrode, a drain electrodeand a pixel electrode, which includes the steps of simultaneously forming into a film an object to be processed and a conductor (a source electrode, a source wire, a drain electrode, a drain wireand a pixel electrode) which are composed of the amorphous prescribed material, followed by simultaneous shaping, and crystallizing the object to be processed which has been shaped to allow it to be the active layer

Semiconductor device, thin film transistor and a method for producing the same

A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure.

Sputtering target, oxide semiconductor film and semiconductor device

A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio '(total of the one or more metals)/(total of the one or more metals and indium)&#xd7;100)' of 0.001% or more and less than 45%.

Indium oxide sintered compact and sputtering target

To provide a method for producing a thin film transistor improved in stability, uniformity, reproducibility, heat resistance, durability or the like, a thin film transistor, a thin film transistor substrate, an image display apparatus, an image display apparatus and a semiconductor device. In the semiconductor device, a crystalline oxide is used as an N-type transistor and the electron carrier concentration of the crystalline oxide is less than 2&#xd7;10/cm. Furthermore, the crystalline oxide is a polycrystalline oxide containing In and one or more positive divalent elements selected from Zn, Mg, Cu, Ni, Co and Ca, and the atomic ratio In [In] and the positive divalent element [X][X]/([X]+[In]) is 0.0001 to 0.13.

Thin film transistor manufacturing method, thin film transistor, thin film transistor substrate and image display apparatus, image display apparatus and semiconductor device

To provide a field-effect transistor improved in transparency, electrical properties, stability, uniformity, reproducibility, heat resistance and durability, and as a reduced overlap capacity between electrodes. A field-effect thin film transistorincludes a gate electrode, an active layer, a source electrodeand a drain electrode, wherein a crystalline oxidecontaining indium and having an electron carrier concentration of less than 10/cmis used as the active layer, and the gate electrodeis in self-alignment with the source electrodeand the drain electrodeThe crystalline oxidecontains a positive trivalent element different from a positive divalent element or indium.

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Chiba, Japan

Masashi Kasami