Tokyo Electron Limited

Masashi Itonaga

Tetsuo Fukuoka

Masanobu Watanabe

Koji Ushimaru

A substrate can be placed on a placing table horizontally. When placing the substrate on the placing table having multiple protrusions configured to support the substrate, the substrate is attracted to the placing table while performing a suction from a suction hole configured to attract a position, different from positions located above the protrusions, of the substrate placed on the placing table, and then, a suction force of the suction hole is reduced. Accordingly, it is possible to place the substrate on the placing table while correcting the flexure. Further, the substrate can be horizontally placed on the placing table since deformation of the wafer, caused by attracting a bottom surface of the wafer strongly, is suppressed.

Substrate placing apparatus and substrate placing method

An abnormal processing can be appropriately detected in a processing of supplying a preset gas to a substrate as a processing target. A hydrophobizing unit Uincludes a processing vesselconfigured to accommodate therein a wafer W as a processing target; an opening/closing unit(first supply unit) configured to supply air (first gas) into the processing vessel; a gas supply unit(second supply unit) configured to supply a HMDS gas (second gas), having a relative humidity different from that of the air, into the processing vessel; and a controller(control unit). The controlleris configured to determine a state of a gas within the processing vesselbased on a relative humidity obtained after a supply of the air by the opening/closing unitand a supply of the HMDS gas by the gas supply unitare performed.

Substrate processing apparatus and substrate processing method

The present disclosure provides an apparatus for generating a processing gas by bubbling a raw material liquid with a carrier gas. The processing gas generated by the bubbling is taken out from a vapor-phase portion above a liquid-phase portion of the raw material liquid through a taking-out unit. A first temperature adjusting unit performs a temperature adjustment of the liquid-phase portion and a second temperature adjusting unit performs a temperature adjustment of the vapor-phase portion such that the temperature of the vapor-phase portion is higher than the temperature of the liquid-phase portion.

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Koshi, Japan

Masashi Itonaga