Osaka University

Itochu Plastics Inc.

Panasonic Corporation

Tokyo University of Agriculture and Technology

Masashi Isemura

Masashi Yoshimura

Yusuke Mori

Mamoru Imade

Takehiro Yoshida

Yoshio Okayama

Masatomo Shibata

Akinori Koukitu

Akira Usui

A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystalby liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystalon the first crystalby vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals(preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystalsto produce a first crystal

Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal

A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystalby liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystalon the first crystalby vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas. In the first Group III nitride crystal production process, the surfaces of seed crystals(preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystalsto produce a first crystal

Process for producing group III nitride crystal and apparatus for producing group III nitride crystal

The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.

Method for producing group III nitride crystal, group III nitride crystal, semiconductor device and apparatus for producing group III nitride crystal

To provide a method for producing a Group III element nitride crystal by growing it on a plane on the &#x2212;c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystalon a crystal growth plane of a Group III element nitride seed crystalby vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystalor includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal. The crystal growth plane is a plane on the &#x2212;c-plane side. A crystal growth temperature is 1200&#xb0; C. or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately &#x2212;c direction.

Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device

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Tokyo, Japan

Masashi Isemura