Ngk Insulators, Inc.

Masashi Goto

Tomoyoshi Tai

Yudai Uno

Takashi Yoshino

Keiichiro Asai

Yuji Hori

Masahiko Namerikawa

Yuji Katsuda

Yoshimasa Kobayashi

Masahiro Sakai

Noboru Nishimura

Shohei Oue

Mai Minoura

Takahiro Yamadera

Shuhei Higashihara

Masahiro Furukawa

Shinya Kaneko

Ayumi Saito

It is provided a bonded substrate of a support substrate and group-13 nitride crystal substrate. The group-13 nitride crystal substrate comprises one or more transition metal elements selected from the group consisting of zinc, iron, manganese, nickel and chromium in a concentration of 1×10atoms·cmor higher and 1×10atoms·cmor lower.

Bonded substrate composed of support substrate and group-13 element nitride crystal substrate

A bonded body includes a supporting substrate composed of a metal oxide, a piezoelectric material substrate, a bonding layer provided between the supporting substrate and piezoelectric material substrate and having a composition of SiO(0.008≤x≤0.408), and an amorphous layer provided between the bonding layer and supporting substrate. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the supporting substrate.

Bonded body and acoustic wave element

A bonded body includes a supporting substrate; a piezoelectric material substrate; a first bonding layer provided on the supporting substrate and having a composition of SiO(0.008≤x≤0.408); a second bonding layer provided on the piezoelectric material substrate and having a composition of SiO(0.008≤y≤0.408); and an amorphous layer provided between the first bonding layer and second bonding layer. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the first bonding layer and oxygen ratio of the second bonding layer.

A bonded body having a supporting substrate and piezoelectric material layer is provided. The supporting substrate is composed of mullite, and the material of the piezoelectric material layer is LiAOwhere A represents one or more element selected from the group consisting of niobium and tantalum. An interface layer is present along an interface between the supporting body and piezoelectric material layer, and a supporting substrate-side intermediate layer is present between the interface layer and supporting substrate. Each of the interface layer and supporting substrate-side intermediate layer contains oxygen, aluminum, silicon and one or more element selected from the group consisting of niobium and tantalum as main components.

Joined body and elastic wave element

A piezoelectric monocrystalline substrate is composed of a material represented by LiAO(A represents at least one element selected from the group consisting of niobium and tantalum), a bonding layer is compose of a material of an oxide of at least one element selected from the group consisting of niobium and tantalum, and an interface layer is provided along an interface between the piezoelectric monocrystalline substrate 6 and bonding layer, and the interface layer has a composition of EO(E represents at least one element selected from the group consisting of niobium and tantalum and 0.29&#x2264;x&#x2264;0.89).

Bonded body with piezoelectric monocrystalline substrate and supporting substrate

A base substrate includes a supporting substrate comprising aluminum oxide, and a base crystal layer provided on a main face of the supporting substrate, comprising a crystal of a nitride of a group 13 element and having a crystal growth surface. At lease one of a metal of a group 13 element and a reaction product of a material of the supporting substrate and the crystal of the nitride of the group 13 element is present between the raised part and the supporting substrate. The reaction product contains at least aluminum and a group 13 element.

Base substrate, functional element, and method for manufacturing base substrate

A bonded body includes a supporting substrate composed of a polycrystalline ceramic material or monocrystalline material, a piezoelectric single crystal substrate and a bonding layer provided between the supporting substrate and piezoelectric single crystal substrate. The bonding layer has a composition of SiO(x represents an oxygen ratio). The oxygen ratio is increased or decreased from an end part of the bonding layer on the side of the piezoelectric single crystal substrate to an end part of the bonding layer on the side of the supporting substrate. The maximum value of the oxygen ratio x in the bonding layer is 0.013 or higher and 0.666 or lower, and the minimum value of the oxygen ratio is 0.001 or higher and 0.408 or lower.

Joint and elastic wave element

A base substrate includes a supporting substrate and a base crystal layer provided on a main face of the supporting substrate composed of a crystal of a groupnitride and having a crystal growth surface. The base crystal layer includes a raised part. A reaction product of a material of the supporting substrate and the crystal of the groupnitride, metal of a groupelement and/or void is present between the raised part and supporting substrate.

Base substrate, functional element, and production method for base substrate

A bonded body includes a piezoelectric single crystal substrate; a supporting substrate composed of a polycrystalline ceramic material or a single crystal material; a bonding layer provided on the piezoelectric single crystal substrate and having a composition of SiO(0.008&#x2264;x&#x2264;0.408); and an amorphous layer provided between the supporting substrate and bonding layer, the amorphous layer containing oxygen atoms and argon atoms. A concentration of the oxygen atoms at a central part of the amorphous layer is higher than a concentration of the oxygen atoms at a peripheral part of the amorphous layer.

Bonded body and elastic wave element

A bonded body includes: a piezoelectric single crystal substrate; a supporting substrate composed of a single crystal silicon; a bonding layer&#x2014;provided between the supporting substrate and piezoelectric single crystal substrate and having a composition of SiO(0.008&#x2264;x&#x2264;0.408); and an amorphous layer provided between the supporting substrate and bonding layer and containing silicon atoms, oxygen atoms, and argon atoms. The concentration of the oxygen atoms in an end part of the amorphous layer on a side of the bonding layer is higher than the average concentration of the oxygen atoms in the bonding layer.

A bonded body includes a supporting substrate, a piezoelectric single crystal substrate and a bonding layer provided between the supporting substrate and piezoelectric single crystal substrate. The bonding layer has a composition of SiO(x represents an oxygen ratio). The oxygen ratio x at a central part in a thickness direction of the bonding layer is higher than an oxygen ratio x at an end part of the bonding layer on a side of the piezoelectric single crystal substrate and an oxygen ratio x at an end part of the bonding layer on a side of the supporting substrate. The oxygen ratio at the central part in the thickness direction of the bonding layer is 0.013 or higher and 0.666 or lower.

A bonding layeris formed over a piezoelectric material substrate, and the bonding layer is made of one or more materials selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide. A neutralized beam is irradiated onto a surface of the bonding layer and a surface of a supporting body to activate the surface of the bonding layer and the surface of the supporting body. The surface of the bonding layer and the surface of the supporting body are bonded by direct bonding.

Bonding method

A bonded body includes a supporting substrate and piezoelectric material layer. The supporting substrate is composed of sialon. The material of the piezoelectric material layer is LiAO(A represents one or more element selected from the group consisting of niobium and tantalum). It is included an interface layer present along an interface between the supporting body and piezoelectric material layer and a supporting substrate-side intermediate layer present between the interface layer and supporting substrate. Each of the interface layer and supporting substrate-side intermediate layer contains nitrogen, oxygen, aluminum, silicon and one or more element selected from the group consisting of niobium and tantalum as main components.

It is formed, over a supporting body made of a ceramic, a bonding layer composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide. Neutralized beam is irradiated onto a surface of the bonding layer to activate the surface of the bonding layer. The surface of the bonding layer and the piezoelectric single crystal substrate are bonded by direct bonding.

A bonded body includes a supporting body composed of a ceramic, a bonding layer provided over a surface of the supporting body and composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide, and a piezoelectric single crystal substrate bonded with the bonding layer. The surface of the supporting body has an arithmetic average roughness Ra of 0.5 nm or larger and 5.0 nm or smaller.

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Nagoya, Japan

Masashi Goto